Chemical Vapor Deposition of Beta Silicon Carbide Epilayers Using the Single Source Precursor 1,2-Disilylethane

1992 ◽  
Vol 282 ◽  
Author(s):  
J. D. Parsons ◽  
D. A. Roberts ◽  
J. G. Wu ◽  
A. K. Chadda ◽  
H-S. Chen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Epitaxial Film ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Nucleation And Growth ◽  
Film Properties ◽  
Single Source Precursor ◽  
Cvd Growth

ABSTRACTA β-SiC epitaxial growth process, using 1,2-disilylethane (DES), was developed. DSE was selected because it contains an equal number of C and Si atoms and its reported decomposition characteristics suggest that C and Si could be obtained from it at approximately equal rates. Repeatable nucleation and epitaxial growth conditions, giving complete substrate coverage and controlled growth, were established by atmospheric pressure CVD, in an inverted-vertical reactor. A substrate temperature of 1290± 10°C was found to be optimum for β-SiC epilayer nucleation and growth. The maximum β-SiC epitaxial growth rate obtained was 10μms/hr. Undoped β-SiC epilayers were n-type (n≈1016 cm−3 ). DSE synthesis, CVD growth parameters, SiC deposition characteristics and β-SiC epitaxial film properties are described.

scholarly journals Phosphorous Doping of Microcrystalline CVD Diamond Using Modified Conditions

2007 ◽  
Vol 1039 ◽  
Author(s):  
Ken Haenen ◽  
Andrada Lazea ◽  
Vincent Mortet ◽  
Jan D'Haen ◽  
Peter Geithner ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Diamond Surfaces ◽  
Cvd Growth ◽  
Oriented Polycrystalline ◽  
Electron Back Scattered Diffraction

AbstractPhosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation was obtained with scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.

In Situ Observation of Nucleation and Growth of Carbon Nanotubes from Iron Carbide Nanoparticles

2008 ◽  
Vol 1142 ◽  
Author(s):  
Hideto Yoshida ◽  
Seiji Takeda ◽  
Tetsuya Uchiyama ◽  
Hideo Kohno ◽  
Yoshikazu Homma
Keyword(s):  
Carbon Nanotubes ◽  
Iron Carbide ◽  
Bulk Diffusion ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Atomic Scale ◽  
In Situ Observation ◽  
Transmission Electron ◽  
Cvd Growth

ABSTRACTNucleation and growth processes of carbon nanotubes (CNTs) in iron catalyzed chemical vapor deposition (CVD) have been observed by means of in-situ environmental transmission electron microscopy. Our atomic scale observations demonstrate that solid state iron carbide (Fe3C) nanoparticles act as catalyst for the CVD growth of CNTs. Iron carbide nanoparticles are structurally fluctuated in CVD condition. Growth of CNTs can be simply explained by bulk diffusion of carbon atoms since nanoparticles are carbide.

scholarly journals Ga2O3 polymorphs: tailoring the epitaxial growth conditions

2020 ◽  
Vol 8 (32) ◽  
pp. 10975-10992 ◽  
Author(s):  
M. Bosi ◽  
P. Mazzolini ◽  
L. Seravalli ◽  
R. Fornari
Keyword(s):  
Epitaxial Growth ◽  
Growth Conditions ◽  
Nucleation And Growth ◽  
Practical Guidelines

We review the nucleation and growth of different Ga2O3 polymorphs with several techniques, giving practical guidelines for their synthesis.

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

1995 ◽  
Vol 78 (8) ◽  
pp. 5136-5138 ◽  
Author(s):  
Christian A. Zorman ◽  
Aaron J. Fleischman ◽  
Andrew S. Dewa ◽  
Mehran Mehregany ◽  
Chacko Jacob ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Pressure Chemical ◽  
Sic Films

Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure

1999 ◽  
Vol 38 (Part 2, No. 5B) ◽  
pp. L586-L589 ◽  
Author(s):  
Minoru Satoh ◽  
Norio Tanaka ◽  
Yoshikazu Ueda ◽  
Shigeo Ohshio ◽  
Hidetoshi Saitoh
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

2013 ◽  
Vol 740-742 ◽  
pp. 251-254
Author(s):  
Milan Yazdanfar ◽  
Pontus Stenberg ◽  
Ian D. Booker ◽  
Ivan.G Ivanov ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Chemical Vapor Deposition Reactor ◽  
Thick Layers

Epitaxial growth of about 200 µm thick, low doped 4H-SiC layers grown on n-type 8° off-axis Si-face substrates at growth rates around 100 µm/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 µm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 µm thick epitaxial layers with excellent morphology.

Single Crystal Epitaxial Growth of β-SiC for Device and Integrated Circuit Applications

1987 ◽  
Vol 97 ◽  
Author(s):  
J. D. Parsons
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Integrated Circuit ◽  
High Speed ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
New Approach ◽  
Growth Environment ◽  
History Of ◽  
Cvd Growth

ABSTRACTBeta SiC is an important semiconductor whose development has been slowed by synthesis difficulties. The physical and electronic properties which make β-SiC desirable for high speed and high power electronics are discussed, with special emphasis on field effect transistor (FET) applications. A history of synthesis efforts is presented to illuminate the obstacles encountered in the growth of semiconductor device quality P-SiC. A new approach to single crystal epitaxy of β-SiC, using TiC as a substrate, is described. The properties of TiC which make it a uniquely suitable substrate for β-SiC epitaxial growth are discussed, and procedures used to prepare TiC surfaces for β-SiC epitaxy are described. The growth process employed at our laboratory, chemical vapor deposition (CVD), is described, and experimental observations of the effects of the CVD growth environment on β-SiC epitaxial growth are presented. Based on these observations, we propose to synthesize β-SiC in a singlesource reaction, using molecules which decompose directly to SiC units. This contrasts with current approaches, which introduce Si and C separately, in molecules which must decompose and subsequently react to form SiC.

Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates

2003 ◽  
Vol 762 ◽  
Author(s):  
M. S. Mason ◽  
C.M. Chen ◽  
H.A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Transmission Electron ◽  
Silicon Growth

AbstractWe investigate low-temperature epitaxial growth of thin silicon films on Si [100] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300 nm thick epitaxial layers at 300°C on silicon [100] substrates using a high H2:SiH4 ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.

Epitaxial growth of β–SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources

1998 ◽  
Vol 13 (7) ◽  
pp. 1738-1740 ◽  
Author(s):  
H. K. Woo ◽  
C. S. Lee ◽  
I. Bello ◽  
S. T. Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Graphite Plate ◽  
Key Factor ◽  
Hot Filament ◽  
Silicon Sources ◽  
Sic Film

Epitaxial β–SiC film has been grown on a mirror-polished Si(111) substrate using bias-assisted hot filament chemical vapor deposition (BA-HFCVD) at a substrate temperature of 1000 °C. A graphite plate was used as the only carbon source, and hydrogen was the only feeding gas to the deposition system. Atomic hydrogen, produced by hot filaments, reacted with the graphite to form hydrocarbon radicals which further reacted with the silicon substrate and deposited as β–SiC. The effect of negatively biasing the substrate is the key factor for epitaxial growth. Under the same growth conditions without negative bias, polycrystalline β–SiC resulted.

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