Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method

2020 ◽  
Vol 8 (47) ◽  
pp. 17025-17033
Author(s):  
Heng Zhang ◽  
Wei Wang ◽  
SenPo Yip ◽  
Dapan Li ◽  
Fangzhou Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Near Infrared ◽  
Performance Enhancement ◽  
Chemical Vapor ◽  
Infrared Photodetectors ◽  
Growth Method ◽  
Step Growth

Substantial performance enhancement of near-infrared photodetectors can be achieved by utilizing two-step chemical vapor deposition-grown InGaAs nanowires as device channels.

Phase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor Deposition

2019 ◽  
Vol 954 ◽  
pp. 72-76
Author(s):  
Ze Qi Li ◽  
Zi Min Chen ◽  
Wei Qu Chen ◽  
Gang Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Flow Rates ◽  
Growth Method ◽  
Metal Organic ◽  
Step Growth ◽  
Organic Chemical Vapor Deposition

In this paper, Ga2O3 thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). There was phase transition for samples grown with different flow rates of triethyl-gallium (TEGa) and deionized water (H2O). It is found that ε-Ga2O3 is difficult to coalesce and the phase mixture by β­Ga2O3 takes place if the flow rates of TEGa and H2O are too high. However, by using multiple-step growth method, the film became fully coalesced. High-quality ε-Ga2O3 thin film with atomically flat surface and multilayer morphology was obtained.

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 7239-7245 ◽  
Author(s):  
Dingshan Zheng ◽  
Hehai Fang ◽  
Mingsheng Long ◽  
Feng Wu ◽  
Peng Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Infrared Photodetectors ◽  
P Type

Hot-wire chemical vapor deposition and characterization of polycrystalline silicon thin films using a two-step growth method

2011 ◽  
Vol 126 (3) ◽  
pp. 665-668 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Shih-Yung Lo ◽  
Ray-Hua Horng
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Growth Method ◽  
Step Growth

Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition

2010 ◽  
Vol 3 (5) ◽  
pp. 055002 ◽  
Author(s):  
Yuichi Yamazaki ◽  
Masayuki Katagiri ◽  
Naoshi Sakuma ◽  
Mariko Suzuki ◽  
Shintaro Sato ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Method ◽  
Step Growth

Chemical Vapor Deposition Growth of High Crystallinity Sb2 Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors

Small ◽  
2019 ◽  
Vol 15 (9) ◽  
pp. 1805307 ◽  
Author(s):  
Zongpeng Ma ◽  
Shouning Chai ◽  
Qingliang Feng ◽  
Liang Li ◽  
Xiaobo Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Infrared Photodetectors ◽  
Strong Anisotropy ◽  
Chemical Vapor Deposition Growth ◽  
High Crystallinity

Synthesis of Carbon Nanocoils by Two-step Growth Method Using Microwave Plasma-Enhanced Chemical Vapor Deposition

2005 ◽  
Vol 44 (No. 36) ◽  
pp. L1158-L1160 ◽  
Author(s):  
Kei Tanaka ◽  
Masamichi Yoshimura ◽  
Atsuto Okamoto ◽  
Kazuyuki Ueda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Growth Method ◽  
Step Growth

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

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