Ultrasensitive Room-Temperature Acetone Gas Sensors Employing Green-Solvent-Processed Aligned InNdO Nanofiber Field-Effect Transistors

2022 ◽  
Author(s):  
Jun Li ◽  
Linkang Li ◽  
Qi Chen ◽  
Wenqing Zhu ◽  
Jianhua Zhang
Keyword(s):  
Gas Sensor ◽  
Gas Sensors ◽  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Green Solvent ◽  
Electrospinning Technique ◽  
Low Concentrations ◽  
Green Solution

The development of a high-performance acetone gas sensor for detecting low concentrations of acetone gas is still a key issue. Here, we propose the green-solution-processed electrospinning technique to construct Nd-doped...

High-performance diketopyrrolopyrrole-based organic field-effect transistors for flexible gas sensors

2015 ◽  
Vol 23 ◽  
pp. 76-81 ◽  
Author(s):  
Gi-Seong Ryu ◽  
Kwang Hun Park ◽  
Won-Tae Park ◽  
Yun-Hi Kim ◽  
Yong-Young Noh
Keyword(s):  
Gas Sensors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

Science ◽  
2018 ◽  
Vol 361 (6400) ◽  
pp. 387-392 ◽  
Author(s):  
Chenguang Qiu ◽  
Fei Liu ◽  
Lin Xu ◽  
Bing Deng ◽  
Mengmeng Xiao ◽  
...  
Keyword(s):  
Energy Efficient ◽  
Field Effect ◽  
Electron Density Distribution ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Electronic Devices ◽  
Electronic Switches

An efficient way to reduce the power consumption of electronic devices is to lower the supply voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 millivolts per decade, in field-effect transistors (FETs). We show that a graphene Dirac source (DS) with a much narrower electron density distribution around the Fermi level than that of conventional FETs can lower SS. A DS-FET with a carbon nanotube channel provided an average SS of 40 millivolts per decade over four decades of current at room temperature and high device current I60 of up to 40 microamperes per micrometer at 60 millivolts per decade. When compared with state-of-the-art silicon 14-nanometer node FETs, a similar on-state current Ion is realized but at a much lower supply voltage of 0.5 volts (versus 0.7 volts for silicon) and a much steeper SS below 35 millivolts per decade in the off-state.

Electrical transduction in phthalocyanine-based gas sensors: from classical chemiresistors to new functional structures

2009 ◽  
Vol 13 (01) ◽  
pp. 84-91 ◽  
Author(s):  
Marcel Bouvet ◽  
Vicente Parra ◽  
Clémentine Locatelli ◽  
Hui Xiong
Keyword(s):  
Present Article ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Real Gas ◽  
Sensor Applications

Phthalocyanines are organic-based materials which have attracted a lot of research in recent times. In the field of sensors, they present interesting and valuable potentialities as sensing elements for real gas sensor applications. In the present article, and taking some of our experiments as representative examples, we review the different ways of transduction applied to such applications. Some of the new tendencies and transducers for gas sensing based on phthalocyanine derivatives are also reported. Among them, electrical transduction (resistors, field-effect transistors, diodes, etc.) has been, historically, the most commonly exploited way for the detection and/or quantification of gas pollutants, vapors and aromas, according to the conducting behavior of phthalocyanines. We will focus precisely on these systems.

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

2010 ◽  
Vol 645-648 ◽  
pp. 515-518 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Yuki Oshiro ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Direct Oxidation ◽  
Mos Capacitors

Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.

Pd-Decorated Multi-Walled Carbon Nanotube Sensor for Hydrogen Detection

2021 ◽  
Vol 21 (7) ◽  
pp. 3707-3710
Author(s):  
Jae Keon Kim ◽  
Maeum Han ◽  
Yeongsam Kim ◽  
Hee Kyung An ◽  
Suwoong Lee ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Gas Sensors ◽  
High Performance ◽  
Room Temperature ◽  
Catalytic Effect ◽  
High Surface ◽  
Volume Ratio ◽  
Ambient Atmosphere ◽  
Low Concentrations ◽  
Multi Walled Carbon Nanotube

As hydrogen (H2) gas is highly reactive and explosive in ambient atmosphere, its prompt detection in industrial areas is imperative to prevent serious accidents. In particular, high-performance H2 sensors that can promptly detect even low-concentrations of H2 gas are necessary for safety. Carbon nanotubes (CNTs) have a large surface area and a high surface-to-volume ratio, and therefore, they are suitable for use as sensing materials in gas sensors. Moreover, gold, platinum, and palladium are known to be excellent catalyst metals that increase reactivity with H2 gas through the catalytic effect referred to as spill-over mechanism. In this study, a CNT felt sensor with a palladium (Pd) layer was fabricated, and its reactivity with H2 was evaluated. The sensitivity of a CNT felt sensor to H2 gas at room temperature was found to improve when coated with Pd layer.

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