Reliability Improvement of superluminescent diodes emitting at 1.0 µm band using InGaAsP barrier structure

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

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The Correlation of Adhesion Strength with Barrier Structure in Cu Metallization

MRS Proceedings ◽

10.1557/proc-766-e.3.5 ◽

2003 ◽

Vol 766 ◽

Author(s):

A. Sekiguchi ◽

J. Koike ◽

K. Ueoka ◽

J. Ye ◽

H. Okamura ◽

...

Keyword(s):

Thin Films ◽

Adhesion Strength ◽

Nitrogen Concentration ◽

Scratch Test ◽

Barrier Structure ◽

Barrier Layers ◽

Cu Metallization ◽

Microstructure Observation ◽

Sputter Deposited ◽

Sulfur Containing

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

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An Advanced Reliability Improvement and Failure Analysis Approach to Thermal Stress Issues in IC Packages

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0001 ◽

2009 ◽

Author(s):

Michael Hertl ◽

Diane Weidmann ◽

Alex Ngai

Keyword(s):

Thermal Stress ◽

Failure Analysis ◽

Deformation Measurement ◽

Stress Conditions ◽

Analysis Approach ◽

New Approach ◽

Reliability Improvement

Abstract A new approach to reliability improvement and failure analysis on ICs is introduced, involving a specifically developed tool for Topography and Deformation Measurement (TDM) under thermal stress conditions. Applications are presented including delamination risk or bad solderability assessment on BGAs during JEDEC type reflow cycles.

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