Electronic properties of gallium-arsenide field-effect-transistor structure used as detector for acoustic surface waves

Electronics Letters ◽

10.1049/el:19720156 ◽

1972 ◽

Vol 8 (8) ◽

pp. 215 ◽

Author(s):

M. Bruun

Keyword(s):

Gallium Arsenide ◽

Surface Waves ◽

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Acoustic Surface Waves ◽

Effect Transistor

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Quantitative analysis of nanoscale electronic properties in an Al[sub x]Ga[sub 1−x]N/GaN heterostructure field-effect transistor structure

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1385914 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1671 ◽

Author(s):

D. M. Schaadt ◽

E. J. Miller ◽

E. T. Yu ◽

J. M. Redwing

Keyword(s):

Quantitative Analysis ◽

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Gan Heterostructure

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Electronic properties of a carbon nanotube in a field-effect transistor structure: A first-principles study

Physical Review B ◽

10.1103/physrevb.79.085402 ◽

2009 ◽

Vol 79 (8) ◽

Author(s):

Kazuyuki Uchida ◽

Susumu Okada

Keyword(s):

Carbon Nanotube ◽

Electronic Properties ◽

First Principles ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

First Principles Study ◽

Effect Transistor

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Dual-gate gallium-arsenide microwave field-effect transistor

Electronics Letters ◽

10.1049/el:19710451 ◽

1971 ◽

Vol 7 (22) ◽

pp. 661 ◽

Author(s):

J.A. Turner ◽

A.J. Waller ◽

E. Kelly ◽

D. Parker

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistor ◽

Microwave Field ◽

Dual Gate ◽

Effect Transistor

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Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Journal of Applied Physics ◽

10.1063/1.4936780 ◽

2015 ◽

Vol 118 (21) ◽

pp. 215701 ◽

Author(s):

Alexander Pooth ◽

Michael J. Uren ◽

Markus Cäsar ◽

Trevor Martin ◽

Martin Kuball

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Charge Movement ◽

Substrate Bias ◽

Transistor Structure ◽

Hetero Structure ◽

Carbon Doped ◽

Effect Transistor

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Deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance

2016 Dynamics of Systems, Mechanisms and Machines (Dynamics) ◽

10.1109/dynamics.2016.7819081 ◽

2016 ◽

Author(s):

Andriy Semenov

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Deterministic Chaos ◽

Negative Resistance ◽

Transistor Structure ◽

Effect Transistor

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4812793 ◽

2013 ◽

Vol 31 (4) ◽

pp. 041203 ◽

Author(s):

Yan Zhu ◽

Mantu K. Hudait ◽

Dheeraj K. Mohata ◽

Bijesh Rajamohanan ◽

Suman Datta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

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Gate leakage reduction through the use of a gate-to-source/drain non-overlapped metal–oxide–semiconductor field-effect transistor structure

Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems ◽

10.1177/1740349911404304 ◽

2010 ◽

Vol 224 (4) ◽

pp. 173-181 ◽

Author(s):

A K Rana ◽

N Chand ◽

V Kapoor

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage ◽

Transistor Structure ◽

Leakage Reduction ◽

Effect Transistor

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Gallium Arsenide Field Effect Transistor Logic Circuits

Wiley Encyclopedia of Electrical and Electronics Engineering ◽

10.1002/047134608x.w6809 ◽

1999 ◽

Author(s):

Douglas J. Fouts ◽

Todd R. Weatherford

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistor ◽

Logic Circuits ◽

Effect Transistor

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Investigating modification on electronic properties of bilayer MoS2 field-effect transistor by low-temperature oxygen plasma treatment

Applied Surface Science ◽

10.1016/j.apsusc.2019.07.228 ◽

2019 ◽

Vol 495 ◽

pp. 143486 ◽

Author(s):

Jiangtao Wang ◽

Jinyao Dong ◽

Yao Xue ◽

Xiaohong Yan ◽

Quan Wang

Keyword(s):

Low Temperature ◽

Plasma Treatment ◽

Electronic Properties ◽

Field Effect ◽

Oxygen Plasma ◽

Field Effect Transistor ◽

Oxygen Plasma Treatment ◽

Effect Transistor

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State Tomography of Layered Qubits via Spin Blockade Measurements on the Edge Qubit in a Spin Field-Effect Transistor Structure Embedded with Quantum Dots

10.1063/1.2730285 ◽

2007 ◽

Author(s):

K. Yuasa ◽

K. Okano ◽

H. Nakazato ◽

S. Kashiwada ◽

K. Yoh

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

State Tomography ◽

Effect Transistor ◽

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