scholarly journals Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

2013 ◽  
Vol 48 ◽  
pp. 00002
Author(s):  
D. Dallaeva ◽  
E. Korostylev ◽  
B. Bilalov ◽  
P. Tománek
Keyword(s):  
Solid Solution ◽  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Microscopy Study ◽  
Thin Layers

High-Density Ceramic Materials on the Basis of Silicon Carbide

2013 ◽  
Vol 592-593 ◽  
pp. 397-400
Author(s):  
Dinara Sultanovna Dallaeva ◽  
Gulnara Darvinovna Kardashova ◽  
Gadjimet Kerimovich Safaraliev ◽  
Pavel Tománek
Keyword(s):  
Solid Solution ◽  
Silicon Carbide ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Aluminum Nitride ◽  
Hot Pressing ◽  
Manufacturing Process ◽  
Ceramic Materials ◽  
High Density ◽  
Scanning Electron

This study describes the principles of synthesis and technological features of composition ceramics formation on the basis of silicon carbide and aluminum nitride by hot-pressing. The structural properties and composition of the ceramics were investigated by scanning electron microscope and the formation of the solid solution is confirmed. The elements distribution on the surface of failure pattern is shown. The results of the study are useful for optimization of manufacturing process of structural and functional high-density ceramics.

scholarly journals Влияние ориентации кремниевой подложки с буферным подслоем карбида кремния на диэлектрические и полярные свойства пленок нитрида алюминия

2019 ◽  
Vol 61 (12) ◽  
pp. 2379
Author(s):  
О.Н. Сергеева ◽  
А.В. Солнышкин ◽  
Д.А. Киселев ◽  
Т.С. Ильина ◽  
С.А. Кукушкин ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Thin Layers ◽  
Silicon Substrates ◽  
Pyroelectric Effect ◽  
Force Microscopy ◽  
Piezoelectric Force Microscopy ◽  
P Type

The dielectric and polar properties of thin films of aluminum nitride (AlN) epitaxially grown on variously oriented p-type silicon substrates with a buffer sublayer of silicon carbide (SiC), as well as on vicinal planes, are studied. According to the results of studies of the polar properties by two independent methods — the dynamic pyroelectric effect and piezoelectric force microscopy, it was shown that the use of a SiC buffer layer significantly improves the polar properties of thin layers of aluminum nitride.

Synthesis of Aluminum Nitride-Silicon Carbide Solid Solutions by Combustion Nitridation

2004 ◽  
Vol 83 (5) ◽  
pp. 1108-1112 ◽  
Author(s):  
Manshi Ohyanagi ◽  
Kenshiro Shirai ◽  
Nadejda Balandina ◽  
Masaaki Hisa ◽  
Zuhair A. Munir
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Solid Solutions

Crystal quality and growth evolution of aluminum nitride on silicon carbide

2006 ◽  
Vol 203 (7) ◽  
pp. 1708-1711 ◽  
Author(s):  
Craig G. Moe ◽  
Yuan Wu ◽  
Stacia Keller ◽  
James S. Speck ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Crystal Quality ◽  
Growth Evolution

Raman microscopy study of pulsed laser ablation deposited silicon carbide films

1998 ◽  
Vol 332 (1-2) ◽  
pp. 290-294 ◽  
Author(s):  
Fortunato Neri ◽  
Sebastiano Trusso ◽  
Cirino Vasi ◽  
Francesco Barreca ◽  
Paolo Valisa
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Microscopy Study ◽  
Raman Microscopy

Seeded PVT Growth of Aluminum Nitride on Silicon Carbide

2003 ◽  
Vol 433-436 ◽  
pp. 983-986 ◽  
Author(s):  
Boris M. Epelbaum ◽  
Matthias Bickermann ◽  
Albrecht Winnacker
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride
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