scholarly journals Investigation of the influence of plasma source power on the properties of magnetron sputtered Ta2O5 thin films

2021 ◽  
Vol 255 ◽  
pp. 03005
Author(s):  
Manuel Bärtschi ◽  
Daniel Schachtler ◽  
Silvia Schwyn-Thöny ◽  
Thomas Südmeyer ◽  
Roelene Botha
Keyword(s):  
Thin Films ◽  
Scattered Light ◽  
Plasma Source ◽  
Stray Light ◽  
Optical Losses ◽  
Coating Materials ◽  
Source Power ◽  
Light Losses ◽  
Interference Coating ◽  
Deposition Processes

To enable the production of sophisticated optical interference coating designs, coatings with very low absorption and stray light losses and excellent layer thickness deposition accuracy are required. The selection and optimization of suitable coating materials and deposition processes are consequently essential. This study investigated the influence of the plasma source power on the optical properties, layer uniformity and stress, scattered light behavior and optical losses of magnetron sputtered Ta2O5 thin films.

Characterization of the mechanical properties of a–SiC: H films

1993 ◽  
Vol 8 (11) ◽  
pp. 2908-2915 ◽  
Author(s):  
M.J. Loboda ◽  
M.K. Ferber
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Properties ◽  
Chemical Vapor ◽  
Plasma Source ◽  
Scratch Test ◽  
Film Structure ◽  
Process Conditions ◽  
Source Power ◽  
Simplified Approach

Amorphous hydrogenated silicon carbide (a–SiC: H) thin films (t < 1 μm) were grown from two different precursor gases, a methane/silane mixture and silacyclobutane (SiC3H8). Plasma enhanced chemical vapor deposition was used to deposit a–SiC: H thin films on silicon substrates at temperatures of 175 °C and 600 °C. These a–SiC: H films were characterized using the mechanical properties microprobe (nanoindenter) and by scratch testing. Data and mechanical properties information collected from these measurements have been correlated with film process conditions and materials characteristics. A simplified approach was used to calculate the average nanoindentation hardness from shallow indentations. Using this technique, results for a silicon wafer are in good agreement with that previously reported. Analysis of the substrate influence on the thin film nanoindentation data implies that the measured hardness is relatively unaffected by the substrate, while the measured elastic properties are somewhat influenced by the substrate. The a–SiC: H film hardness is shown to depend on the precursor gas and molecular bonding, while the elastic properties vary with precursor gas, composition, and density, as influenced by the plasma source deposition power. The MPM data and scratch test data show similar correlations to plasma source power, film structure, and film composition.

scholarly journals YIG: Bi2O3Nanocomposite Thin Films for Magnetooptic and Microwave Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
M. Nur-E-Alam ◽  
Mikhail Vasiliev ◽  
Kamal Alameh ◽  
Viacheslav Kotov ◽  
Victor Demidov ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Range ◽  
Oxide Content ◽  
Rf Power ◽  
Optical Losses ◽  
Deposition Processes ◽  
Power Densities ◽  
Application Specific ◽  
532 Nm ◽  
Ferromagnetic Resonance Linewidth

Y3Fe5O12-Bi2O3composite thin films are deposited onto Gd3Ga5O12(GGG) substrates and their annealing crystallization regimes are optimized (in terms of both process temperatures and durations) to obtain high-quality thin film layers possessing magnetic properties attractive for a range of technological applications. The amount of bismuth oxide content introduced into these nanocomposite-type films is controlled by adjusting the RF power densities applied to both Y3Fe5O12and Bi2O3sputtering targets during the cosputtering deposition processes. The measured material properties of oven-annealed YIG-Bi2O3films indicate that cosputtering of YIG-Bi2O3composites can provide the flexibility of application-specific YIG layers fabrication of interest for several existing, emerging, and also frontier technologies. Experimental results demonstrate large specific Faraday rotation (of more than 1°/µm at 532 nm), achieved simultaneously with low optical losses in the visible range and very narrow peak-to-peak ferromagnetic resonance linewidth of around ΔHpp= 6.1 Oe at 9.77 GHz.

scholarly journals Reduced optical losses in refractory plasmonic titanium nitride thin films deposited with molecular beam epitaxy

2020 ◽  
Vol 10 (10) ◽  
pp. 2679 ◽  
Author(s):  
Krishna Chand Maurya ◽  
Vladimir M. Shalaev ◽  
Alexandra Boltasseva ◽  
Bivas Saha
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Titanium Nitride ◽  
Molecular Beam ◽  
Optical Losses

Mechanical and Chemical Properties of CBxNy and CSixNy Thin Films Grown by N*-Plasma Assisted Pulsed Laser Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
T. Thärigen ◽  
V. Riede ◽  
G. Lippold ◽  
E. Hartmann ◽  
R. Hesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Properties ◽  
Plasma Source ◽  
Laser Deposition ◽  
Lower Amount ◽  
Rf Plasma ◽  
Clear Correlation

ABSTRACTCarbon silicon nitride (CSixNy), and carbon boron nitride (CBxNy) thin films have been grown by pulsed laser deposition (PLD) of various carbon (silicon/boron) (nitride) targets using an additional nitrogen RF plasma source on [100] oriented silicon substrates without additional heating. The CSixNy and CBxNy thin films were amorphous and showed nano hardness up to 23 GPa compared to 14 GPa for silicon and maximum nitrogen content of 30 at%. The maximum nanohardness was achieved for 10% Si and 10% B content in the films. The lower hardness of this films compared to the nanohardness of 30-50 GPa of DLC films indicates a lower amount of covalent carbon-nitrogen bonding in the films. However, in contrast to DLC films, the CSixNy and CBxNy films can be grown to thickness above 3 μm due to lower internal compressive stress. XPS of CSixNy and CBxNy film surfaces shows clear correlation of binding energy and intensity of N ls, C ls, and Si 2p peaks to composition of the PLD-targets and to nitrogen flow through plasma source, indicating soft changes of binding structure due to variation of PLD parameters. The results demonstrate the capability of the plasma assisted PLD process to deposit hard amorphous CSixNy, and CBxNy thin films with adjustable properties.

scholarly journals Aqueous-based Binary Sulfide Nanoparticle Inks for Cu2ZnSnS4 Thin Films Stabilized with Tin(IV) Chalcogenide Complexes

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1382
Author(s):  
Han Wang ◽  
Amrita Yasin ◽  
Nathaniel Quitoriano ◽  
George Demopoulos
Keyword(s):  
Thin Films ◽  
Nanoparticle Synthesis ◽  
Economic Feasibility ◽  
Organic Ligands ◽  
Sulfur Vapor ◽  
Optical And Electronic Properties ◽  
Photovoltaic Applications ◽  
Deposition Processes ◽  
Czts Thin Films

Cu2ZnSnS4(CZTS) is a promising semiconductor material for photovoltaic applications,with excellent optical and electronic properties while boasting a nontoxic, inexpensive, andabundant elemental composition. Previous high‐quality CZTS thin films often required eithervacuum‐based deposition processes or the use of organic ligands/solvents for ink formulation,which are associated with various issues regarding performance or economic feasibility. To addressthese issues, an alternative method for depositing CZTS thin films using an aqueous‐basednanoparticle suspension is demonstrated in this work. Nanoparticles of constituent binary sulfides(CuxS and ZnS) are stabilized in an ink using tin(IV)‐based, metal chalcogenide complexes such as[Sn2S6]4‐. This research paper provides a systematic study of the nanoparticle synthesis and inkformulation via the enabling role of the tin chalcogenide complexing power, the deposition of highqualityCZTS thin films via spin coating and annealing under sulfur vapor atmosphere, theirstructural characterization in terms of nanocrystal phase, morphology, microstructure, anddensification, and their resultant optoelectronic properties.

Plasma source low-energy ion-enhanced deposition of thin films

Vacuum ◽  
2000 ◽  
Vol 57 (4) ◽  
pp. 327-338 ◽  
Author(s):  
M.K. Lei ◽  
J.D. Chen ◽  
Y. Wang ◽  
Z.L. Zhang
Keyword(s):  
Thin Films ◽  
Plasma Source ◽  
Low Energy

Structure and Magnetic Properties of Fe-N Thin Films Grown by ECR Deposition

1999 ◽  
Vol 562 ◽  
Author(s):  
Š émeth ◽  
H. Akinaga ◽  
H. Boeve ◽  
H. Bender ◽  
J. de Boeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
High Vacuum ◽  
Plasma Source ◽  
Columnar Structure ◽  
Ultra High Vacuum ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe growth of FexNy thin films on GaAs, In0.2Ga0.8As, and SiO2/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, y-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

Ion Effects in Optical Films

1991 ◽  
Vol 223 ◽  
Author(s):  
U. J. Gibson
Keyword(s):  
Thin Films ◽  
Ion Beams ◽  
Index Of Refraction ◽  
Gradient Index ◽  
Index Structures ◽  
Film Properties ◽  
Optical Films ◽  
Multilayer Filters ◽  
Ion Effects ◽  
Deposition Processes

ABSTRACTIon bombardment during growth of thin films has been shown to be a powerful technique for alteration of a wide variety of film properties from index of refraction and stoichiometry to density and abrasion resistance. A brief review of the deposition processes and ion effects of relevance to the production of optical films is presented. Application of the technique to some particular problems in films with both optical and protective roles, and the use of ion beams to alter the chemical composition and hence index of films will be discussed. Both homogeneous and spatially non-uniform coatings will be discussed, including generation of multilayer filters and gradient index structures in waveguiding films.

scholarly journals Deposition routes of Cs2AgBiBr6 double perovskites for photovoltaic applications

MRS Advances ◽  
2018 ◽  
Vol 3 (32) ◽  
pp. 1819-1823 ◽  
Author(s):  
Martina Pantaler ◽  
Christian Fettkenhauer ◽  
Hoang L. Nguyen ◽  
Irina Anusca ◽  
Doru C. Lupascu
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Perovskite Phase ◽  
Perovskite Solar Cells ◽  
Double Perovskite ◽  
Double Perovskites ◽  
Sequential Deposition ◽  
Absorber Material ◽  
Photovoltaic Applications ◽  
Deposition Processes

ABSTRACTThe lead free double perovskite Cs2AgBiBr6 is an upcoming alternative to lead based perovskites as absorber material in perovskite solar cells. So far, the majority of investigations on this interesting material have focused on polycrystalline powders and single crystals. We present vapor and solution based approaches for the preparation of Cs2AgBiBr6 thin films. Sequential vapor deposition processes starting from different precursors are shown and their weaknesses are discussed. Single source evaporation of Cs2AgBiBr6 and sequential deposition of Cs3Bi2Br9 and AgBr result in the formation of the double perovskite phase. Additionally, we show the possibility of the preparation of planar Cs2AgBiBr6 thin films by spin coating.

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