scholarly journals A reference current source with a low temperature coefficient

2018 ◽  
Vol 232 ◽  
pp. 04077
Author(s):  
DongYang Han ◽  
XiaoNing Xin ◽  
GuoFeng Liu
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Temperature Coefficient ◽  
Current Source ◽  
Output Current ◽  
High Demand ◽  
Temperature Characteristics ◽  
Advantages And Disadvantages ◽  
Circuit Structure ◽  
Typical Process

In view of the high demand for low temperature coefficient reference current sources in integrated circuits, the advantages and disadvantages of several typical reference current sources in circuit structure and temperature characteristics are compared. In this paper, a low temperature coefficient reference current source is designed. Based on Hua Hong HHNECGE 0.35um process, the output current is 0.4uA, the temperature range is -40°C-125°C, and the temperature coefficient is 7.6ppm/°C under typical process angle. Other processes The temperature coefficient under the corner is at 10ppm/°C.

scholarly journals Design of an Ultra-Low Voltage Bias Current Generator Highly Immune to Electromagnetic Interference

2021 ◽  
Vol 11 (1) ◽  
pp. 6
Author(s):  
Orazio Aiello
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Low Voltage ◽  
Current Source ◽  
Building Blocks ◽  
Cmos Technology ◽  
Threshold Region ◽  
Output Current ◽  
Current Generator ◽  
Technology Process

The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions.

An All CMOS Current Reference

2011 ◽  
Vol 135-136 ◽  
pp. 192-197
Author(s):  
Lin An Li ◽  
Ming Tang ◽  
Wen Ou ◽  
Yang Hong
Keyword(s):  
Low Temperature ◽  
Temperature Coefficient ◽  
Supply Voltage ◽  
Current Source ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Signal Process ◽  
Temperature Variations ◽  
Current Reference ◽  
Reference Circuit

In this paper, an all CMOS current reference circuit which generates a reference current independent of PVT (Process, supply Voltage, and Temperature) variations is presented. The circuit consists of a self-biased current source (SBCS) and two nested connected transistors which supply a voltage with positive temperature coefficient and the resulting reference circuit has low temperature coefficient. It is based on CSMC 0.5um mixed-signal process with the supply voltage of 5V. The precision of reference current is about ±3.05% when considering the process, supply voltage and temperature variation at the same time.

EVANOHM

Alloy Digest ◽  
1960 ◽  
Vol 9 (4) ◽  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Base Alloy ◽  
Nickel Base Alloy ◽  
Temperature Coefficient Of Resistance ◽  
High Electrical Resistivity ◽  
Nickel Base

Abstract EVANOHM is a nickel-base alloy having low temperature coefficient of resistance and high electrical resistivity. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on joining. Filing Code: Ni-57. Producer or source: Wilbur B. Driver Company.

ISO-ELASTIC

Alloy Digest ◽  
1957 ◽  
Vol 6 (8) ◽  
Keyword(s):  
Corrosion Resistance ◽  
Low Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Nickel Alloy ◽  
Modulus Of Elasticity ◽  
Heat Treating ◽  
Precision Instrument ◽  
Iron Nickel

Abstract ISO-ELASTIC is an iron-nickel alloy having low temperature coefficient of the modulus of elasticity. It is suitable for precision instrument springs. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, and machining. Filing Code: Fe-14. Producer or source: John Chatillon & Sons.

scholarly journals Stacked Buck Converter: Current Ripple Elimination Effect and Transient Response

Energies ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 64
Author(s):  
Chien-Chun Huang ◽  
Yu-Chen Liu ◽  
Chia-Ching Lin ◽  
Chih-Yu Ni ◽  
Huang-Jen Chiu
Keyword(s):  
Transient Response ◽  
Dead Time ◽  
Control Method ◽  
Buck Converter ◽  
Modulation Method ◽  
Output Current ◽  
Time Modulation ◽  
Advantages And Disadvantages ◽  
Improvement Method ◽  
Current Ripple

To balance the cost and volume when applying a low output current ripple, the power supply design should be able to eliminate the current ripple under any duty cycle in medium and high switching frequencies, and considerably reduce filter volume to improve power density. A stacked buck converter was eventually selected after reviewing the existing solutions and discussing their advantages and disadvantages. A stacked buck converter is used as a basis to propose the transient response and output current ripple elimination effect, boundary limit control method, and low output ripple dead time modulation method to make individual improvements. The principle, mathematical derivation, small-signal model, and compensator design method of the improvement method are presented in detail. Moreover, simulation results are used to mutually verify the correctness and effectiveness of the improvement method. A stacked buck converter with 330-V input, 50-V output, and 1-kW output power was implemented to verify the effect of the low output current ripple dead time modulation. Experimental results showed that the peak-to-peak value of the output current ripple was reduced from 2.09 A to 559 mA, and the RMS value was reduced from 551 mA to 91 mA, thereby effectively improving the output current ripple.

GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology

1989 ◽  
Author(s):  
M.J. Delaney ◽  
C.S. Chou ◽  
L.E. Larson ◽  
J.F. Jensen ◽  
D.S. Deakin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Digital Integrated Circuits ◽  
Gaas Mesfet
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