Nano-oxidation of silicon nitride films with an atomic force microscope: Chemical mapping, kinetics, and applications

2001 ◽  
Vol 89 (4) ◽  
pp. 2465-2472 ◽  
Author(s):  
F. S.-S. Chien ◽  
Y. C. Chou ◽  
T. T. Chen ◽  
W.-F. Hsieh ◽  
T.-S. Chao ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Force Microscope ◽  
Chemical Mapping ◽  
Silicon Nitride Films ◽  
Atomic Force

The atomic-force microscope and its future in biology

1993 ◽  
Vol 51 ◽  
pp. 704-705
Author(s):  
Jean-Paul Revel
Keyword(s):  
Silicon Nitride ◽  
Laser Beam ◽  
Atomic Force Microscope ◽  
Scanning Tunneling Microscope ◽  
Point Of View ◽  
Scanning Tunneling ◽  
Close Relative ◽  
Tunneling Microscope ◽  
Atomic Force ◽  
Sharp Point

The last few years have been marked by a series of remarkable developments in microscopy. Perhaps the most amazing of these is the growth of microscopies which use devices where the place of the lens has been taken by probes, which record information about the sample and display it in a spatial from the point of view of the context. From the point of view of the biologist one of the most promising of these microscopies without lenses is the scanned force microscope, aka atomic force microscope.This instrument was invented by Binnig, Quate and Gerber and is a close relative of the scanning tunneling microscope. Today's AFMs consist of a cantilever which bears a sharp point at its end. Often this is a silicon nitride pyramid, but there are many variations, the object of which is to make the tip sharper. A laser beam is directed at the back of the cantilever and is reflected into a split, or quadrant photodiode.

Fundamental Measurements of the Friction on an Atomically-Flat Terrace of Au(100) in Sulfuric Acid Solution under Potential Control Using Electrochemical Atomic Force Microscope

2006 ◽  
Vol 512 ◽  
pp. 395-398
Author(s):  
Nobumitsu Hirai ◽  
Tatsuya Tooyama ◽  
Toshihiro Tanaka
Keyword(s):  
Aqueous Solution ◽  
Sulfuric Acid ◽  
Silicon Nitride ◽  
Acid Solution ◽  
Atomic Force Microscope ◽  
Friction Force ◽  
Potential Range ◽  
Potential Control ◽  
Atomic Force ◽  
Atomically Flat

Potential dependence of the friction force between an atomically-flat terrace of Au(100) single crystal and a tip attached to a silicon nitride cantilever of electrochemical atomic force microscope (EC-AFM) have been investigated qualitatively in 0.05 M H2SO4 aqueous solution. It is found that the friction force gains when the potential increases in the potential range between −400 mV and 400 mV vs Hg/Hg2SO4 electrode.

scholarly journals In situ bulge testing in an atomic force microscope: Microdeformation experiments of thin film membranes

2007 ◽  
Vol 22 (10) ◽  
pp. 2902-2911 ◽  
Author(s):  
E.W. Schweitzer ◽  
M. Göken
Keyword(s):  
Atomic Force Microscope ◽  
Bulge Test ◽  
Silicon Nitride Films ◽  
Atomic Force ◽  
Bulge Testing ◽  
Cu Film ◽  
Strain Data ◽  
Load Conditions ◽  
Good Agreement

A new bulge testing setup for the measurement of the mechanical properties of thin films is presented. This self-built device can be incorporated in an atomic force microscope (AFM), which allows the recording of topographic images of the observed sample membranes under load conditions. Bulge test experiments on different silicon nitride films are presented and compared to nanoindentation experiments. The measured elastic moduli from nanoindentation and bulge testing are in good agreement. Apart from that, the ability to extract stress–strain data from AFM scans is shown, and the results are compared to standard bulge testing experiments. Imaging of the sample microstructure under load conditions is demonstrated on a thin Cu film.

scholarly journals Unzipping a Membrane

2000 ◽  
Vol 8 (9) ◽  
pp. 3-7
Author(s):  
Stephen W. Carmichael ◽  
Julio M. Fernandez
Keyword(s):  
Silicon Nitride ◽  
Atomic Force Microscope ◽  
Spatial Resolution ◽  
High Resistance ◽  
Outer Surface ◽  
Deinococcus Radiodurans ◽  
Force Spectroscopy ◽  
Test Subject ◽  
Atomic Force ◽  
Inner Surface

The atomic force microscope (AFM) is well known for its outstanding spatial resolution, but it is becoming increasingly useful as the instrument for force spectroscopy. In the force spectroscopy mode, the AFM can measure tiny tension forces, in the piconewton (pN) range. Daniel Müller, Wolfgang Baurmeister, and Andreas Engel have used the AFM in both the imaging and force spectroscopy modes to pull proteins out of membranes in a controlled fashion.Müller et al. used Deinococcus radiodurans, a bacterium best known for its high resistance to radiation (as its Genus name implies), as their test subject. They extracted a highly regular membrane from the bacterium, the hexagonally packed intermediate (HPl) layer. They mounted the HPI on mica, so that the hydrophilic outer surface of the HPI adsorbed strongly to the mica, exposing the hydrophobic inner surface to the silicon nitride AFM stylus.

BUCKLING MORPHOLOGIES AND INTERFACIAL PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED ON FLOAT GLASS SUBSTRATES

2015 ◽  
Vol 22 (04) ◽  
pp. 1550046 ◽  
Author(s):  
YA-DONG SUN ◽  
QI-XIANG CHEN ◽  
YU-FEI FENG ◽  
JUN CHEN ◽  
SEN-JIANG YU
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Interfacial Adhesion ◽  
Interfacial Properties ◽  
Float Glass ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Silicon Nitride Films ◽  
Atomic Force ◽  
The Continuum

We report on the buckling morphologies and interfacial properties of silicon nitride films deposited on float glass substrates. The coexistence of straight-sided and telephone cord buckles can be observed in the silicon nitride films after annealing at a high temperature. The straight-sided structure is metastable and can spontaneously evolve into the telephone cord structure accompanied by the increase in the buckle width and height. The geometric parameters of various buckling structures (including the straight blister, telephone cord and their transition state) have been measured by optical microscopy and atomic force microscopy (AFM). The internal stress and interfacial adhesion of the films are evaluated and analyzed based on the continuum elastic theory. It is valid to measure the interfacial properties of thin films by simplifying the telephone cord buckle as a straight-sided structure. This measurement technique is suitable for all the film systems provided that the buckles can form in the film.

Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD

2013 ◽  
Vol 537 ◽  
pp. 12-15
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Visible Region ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Glass Substrates ◽  
Silicon Nitride Films ◽  
Atomic Force ◽  
Average Transmittance ◽  
Surface Morphologies

Under different growth conditions, silicon nitride (SiNx) thin films were deposited successfully on Si(100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The surface morphologies of the thin films were investigated using atomic force microscope (AFM). The average transmittance in the visible region was over 90%.

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