Apparatus for Microwave Measurement of Transport Parameters in Semiconductors

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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Microwave Non-Destructive Testing of Coatings and Paints Using Free Space Microwave Measurement

Scientific Research Journal ◽

10.24191/srj.v2i2.9329 ◽

2005 ◽

Vol 2 (2) ◽

pp. 17

Author(s):

Norhayati Hamzah ◽

Deepak Kumar Ghodgaonkar ◽

Kamal Faizin Che Kasim ◽

Zaiki Awang

Keyword(s):

Free Space ◽

Protective Coatings ◽

Microwave Measurement ◽

Multiple Reflections ◽

Destructive Testing ◽

Lens Antennas ◽

Coatings And Paints ◽

Microwave Nondestructive Testing ◽

Mode Transitions ◽

Diffraction Effects

Microwave nondestructive testing (MNDT) techniques are applied to evaluate quality of anti-corrosive protective coatings and paints on metal surfaces. A tree-space microwave measurement (FSMM) system is used for MNDT of protective coatings. The FSMM system consists of transmit and receive spot-focusing horn lens antennas, a vector network analyzer, mode transitions and a computer. Diffraction effects at the edges of the sample are minimized by using spot-focusing horn lens antennas. Errors due to multiple reflections between antennas are corrected by using free-space LRL (line, reflect, line) calibration technique. We have measured complex reflection coefficient of polyurethane based paint which is coated on brass plates.

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Evaluation of Kinetic Parameters at the Transport of Indole-3-acetic Acid Through Bulk Liquid Membranes

Revista de Chimie ◽

10.37358/rc.17.5.5577 ◽

2017 ◽

Vol 68 (5) ◽

pp. 903-907

Author(s):

Ecaterina Anca Serban ◽

Ioana Diaconu ◽

Elena Ruse ◽

Georgiana Ileana Badea ◽

Adriana Cuciureanu ◽

...

Keyword(s):

Acetic Acid ◽

Kinetic Parameters ◽

Trioctylphosphine Oxide ◽

Bulk Liquid ◽

Transport Parameters ◽

Kinetics Parameters ◽

First Order ◽

Phase Concentration ◽

Feed Phase ◽

Indole 3 Acetic Acid

Indole-3-acetic acid is a growth phytohormone considered the most important representative of auxin class. This paper presents the assessment of some kinetic parameters in the process of transport of indole-3-acetic acid taking into consideration the kinetic model of consecutive irreversible first order reactions. It was pursued the influence upon the process of parameters such as: feed phase concentration, stripping phase concentration in the presence of two type carriers: tributyl phosphate (TBP) and trioctylphosphine oxide (TOPO). Depending on these transport parameters were calculated kinetics parameters such as: pseudo-first-order apparent membrane entrance and exit rate constants, the maximum flux at the entrance and exit out of the membrane. The highest values of the transport flux is obtained in the presence of carrier trioctylphosphine oxide (TOPO) at the concentration in the feed phase of 10-4 mol/L indole-3-acetic acid and a concentration of 10--2mol/L NaOH in the stripping phase.

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BAYESIAN PREDICTION OF FLUVIAL TRANSPORT PARAMETERS

10.1130/abs/2019am-333477 ◽

2019 ◽

Author(s):

Thomas Ashley ◽

◽

Brandon McElroy

Keyword(s):

Bayesian Prediction ◽

Transport Parameters ◽

Fluvial Transport

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BEYOND ORDINARY AQUIFER TRACER TESTING: INCLUDING GEOCHEMICAL DATA FOR CONTAMINANT TRANSPORT PARAMETERS AT A LEGACY URANIUM MILL SITE

10.1130/abs/2019am-338658 ◽

2019 ◽

Author(s):

Raymond H. Johnson ◽

◽

Aaron D. Tigar ◽

Charles J. Paradis ◽

Paul W. Reimus

Keyword(s):

Contaminant Transport ◽

Geochemical Data ◽

Transport Parameters ◽

Tracer Testing

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Extra-Column Effects in Determination of Rate Parameters by the Chromatographic Method

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19960844 ◽

1996 ◽

Vol 61 (6) ◽

pp. 844-855 ◽

Cited By ~ 7

Author(s):

Olga Šolcová ◽

Petr Schneider

Keyword(s):

Chromatographic Method ◽

Dynamic Method ◽

Axial Dispersion ◽

Transport Parameters ◽

Porous Particles ◽

Loop Detector ◽

Single Pellet ◽

Set Up ◽

Extra Column Effects

It was shown that the sampling loop, detector and connecting elements in the chromatographic set-up for determination of transport parameters by the dynamic method significantly influence the response peaks from columns packed with porous or nonporous particles. A method, based on the use of convolution theorem, was developed which can take these effects into account. The applicability of this method was demonstrated on the case of axial dispersion in a single-pellet-string column (SPSR) packed with nonporous particles. It is possible to handle also responses from columns packed with porous particles by a similar procedure.

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Novel method for extraction of hole transport parameters in heavily doped n-type emitter

Electronics Letters ◽

10.1049/el:19890752 ◽

1989 ◽

Vol 25 (17) ◽

pp. 1120 ◽

Cited By ~ 2

Author(s):

Y. Pan ◽

M. Kleefstra

Keyword(s):

Hole Transport ◽

Transport Parameters ◽

Novel Method ◽

Heavily Doped

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Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

MRS Proceedings ◽

10.1557/proc-377-443 ◽

1995 ◽

Vol 377 ◽

Cited By ~ 2

Author(s):

G. J. Adriaenssens ◽

B. Yan ◽

A. Eliat

Keyword(s):

Space Charge ◽

Conduction Band Edge ◽

Time Range ◽

Space Charge Limited Current ◽

Transport Parameters ◽

Limited Current ◽

Emission Time ◽

Time Regime ◽

Carrier Extraction ◽

Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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