In this work, we have discovered a method of forming ZnO thin films with high mobility, high carrier density and low resistivity on plastic (PET) films using non-equilibrium reaction fields, even when the films are deposited without heating, and we have also found a thin film formation technique using a wet process that is different from conventional deposition techniques. The field emission electron-beam irradiation treatment energetically activates the surface of ZnO particles and decomposes each ZnO particles. The energy transfer between zinc ions and ZnO surface and the oxygen present in the atmosphere around the ZnO particles induce the oxidation of zinc. In addition, the ZnO thin films obtained in this study successfully possess high functional thin films with high electrical properties, including high hole mobility of 208.6 cm2/Vs, despite being on PET film substrates. These results contribute to the discovery of a mechanism to create highly functional oxide thin films using a simple two-dimensional process without any heat treatment on the substrate or during film deposition. In addition, we have elucidated the interfacial phenomena and crosslinking mechanisms that occur during the bonding of metal oxide particles, and understood the interfacial physical properties and their effects on the electronic structure. and surface/interface control, and control of higher-order functional properties in metal/ceramics/semiconductor composites, and contribute to the provision of next-generation nanodevice components in a broad sense.
High-mobility electronic transport in ZnO thin films