Amorphous nonstoichiometric Ge1−x–Cx:H compounds obtained by radiolysis-chemical vapor deposition of germane/ethyne or germane/allene systems: A bonding and microstructure investigation performed by x-ray photoelectron spectroscopy and Raman spectroscopy

2007 ◽  
Vol 101 (12) ◽  
pp. 124906 ◽  
Author(s):  
Paola Benzi ◽  
Elena Bottizzo ◽  
Chiara Demaria ◽  
Guido Infante ◽  
Giovanna Iucci ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
X Ray

scholarly journals A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures

2016 ◽  
Vol 18 (32) ◽  
pp. 22160-22167 ◽  
Author(s):  
K. Ganesan ◽  
Subrata Ghosh ◽  
Nanda Gopala Krishna ◽  
S. Ilango ◽  
M. Kamruddin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Comparative Study ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
X Ray ◽  
Defect Estimation

Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) have been investigated using Raman and X-ray photoelectron spectroscopy.

scholarly journals Graphene Growth Directly on SiO2/Si by Hot Filament Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 109
Author(s):  
Sandra Rodríguez-Villanueva ◽  
Frank Mendoza ◽  
Alvaro A. Instan ◽  
Ram S. Katiyar ◽  
Brad R. Weiner ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Copper Strip ◽  
X Ray ◽  
Catalytic Material ◽  
Hot Filament

We report the first direct synthesis of graphene on SiO2/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO2/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO2/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy.

Complex XPS and Raman Study of Graphene on Copper and Si/SiO2 Subjected to Ar Ion Treatment

2016 ◽  
Vol 721 ◽  
pp. 258-262 ◽  
Author(s):  
Tatiana Larionova ◽  
Tatiana Koltsova ◽  
Mariya Kozlova ◽  
Vladimir Levitskii ◽  
Ilya Eliseyev ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
X Ray ◽  
Raman Study ◽  
Grown Graphene ◽  
The One ◽  
Ion Treatment

Graphene grown by chemical vapor deposition on copper and the one transferred to Si/SiO2 substrate were subjected to Ar ion treatment. A combination of X-ray photoelectron spectroscopy and Raman spectroscopy were used for characterization. According to XPS data sample on Si/SiO2 appears less susceptible to sputtering under bombardment. However, the defect concentrations introduced to the transferred graphene reach up the value two orders of magnitude higher than that in as grown graphene on Cu. We attribute this difference to the influence of the non-compensated charge formed on the insulating SiO2 layer under bombardment.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Chemical Vapor Deposition of Niobium Carbide using a Novel Organometallic Precursor.

1989 ◽  
Vol 168 ◽  
Author(s):  
Paul D. Stupik ◽  
Linda K. Cheatham ◽  
John J. Graham ◽  
Andrew R. Barron
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Atmospheric Pressure ◽  
Niobium Carbide ◽  
Chemical Vapor ◽  
Stoichiometric Ratio ◽  
X Ray ◽  
Organometallic Precursor ◽  
Scanning Electron

AbstractChemical vapor deposition from (MeCp)2Nb(allyl) at atmospheric pressure yields niobium carbide films at temperatures as low as 300°C. X-ray photoelectron spectroscopy (XPS) studies indicate that the bulk films contain a carbide phase and a nearly stoichiometric ratio of niobium to carbon. The morphology of the films has been examined by scanning electron microscopy (SEM).

Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray ◽  
Crystalline Films

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

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