scholarly journals Graphene Growth Directly on SiO2/Si by Hot Filament Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 109
Author(s):  
Sandra Rodríguez-Villanueva ◽  
Frank Mendoza ◽  
Alvaro A. Instan ◽  
Ram S. Katiyar ◽  
Brad R. Weiner ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Copper Strip ◽  
X Ray ◽  
Catalytic Material ◽  
Hot Filament

We report the first direct synthesis of graphene on SiO2/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO2/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO2/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy.

scholarly journals Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

PLoS ONE ◽  
2021 ◽  
Vol 16 (10) ◽  
pp. e0259216
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Experimental Methodology ◽  
Si Substrate ◽  
X Ray ◽  
Silicon Nitride Films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.

Characterization of Nitrogen Doped Diamond Electrodes Produced by Hot Filament Chemical Vapor Deposition

2014 ◽  
Vol 802 ◽  
pp. 180-185 ◽  
Author(s):  
Nazir M. Santos ◽  
Tatiane M. Arantes ◽  
Neidênei G. Ferreira ◽  
Mauricio R. Baldan
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nitrogen Doping ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Diamond Electrodes ◽  
X Ray ◽  
Nitrogen Doped ◽  
Hot Filament

The purpose of this work is to study the structural and morphological modification of the surface of the n-type diamond electrodes as a function of nitrogen doping. The characterizations of these electrodes were made using Raman Spectroscopy, Contact Angle, X-ray diffraction and Scanning Electron Microscopy (SEM). The nitrogen-doped diamond (NDD) electrodes were produced using Hot Filament-assisted Chemical Vapor Deposition method (HFCVD) from methane, hydrogen and nitrogen in the gas mixture. The results from Raman spectroscopy show that the diamond films obtained with nitrogen addition presented one large band at 1100-1700 cm-1. The SEM images showed that the variation in the nitrogen doping influenced the growth rate of films by promoting changes in the sizes of grains from microcrystalline to nanocrystalline texture. This behavior supported the results obtained from X-ray diffraction analyses. It was possible to verify a decrease in the crystallite size as a function of the nitrogen increase.

scholarly journals A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures

2016 ◽  
Vol 18 (32) ◽  
pp. 22160-22167 ◽  
Author(s):  
K. Ganesan ◽  
Subrata Ghosh ◽  
Nanda Gopala Krishna ◽  
S. Ilango ◽  
M. Kamruddin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Comparative Study ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
X Ray ◽  
Defect Estimation

Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) have been investigated using Raman and X-ray photoelectron spectroscopy.

Synthesizing Nanocrystalline Carbon Thin Films by Hot Filament Chemical Vapor Deposition and Controlling Their Microstructure

2002 ◽  
Vol 17 (7) ◽  
pp. 1820-1833 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Noble Gas ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament ◽  
Methane Concentrations

Nanocrystalline carbon (n-C) thin films were deposited on Mo substrates using methane (CH4) and hydrogen (H2) by the hot-filament chemical vapor deposition (HFCVD) technique. Process parameters relevant to the secondary nucleation rate were systematically varied (0.3–2.0% methane concentrations, 700–900 °C deposition temperatures, and continuous forward and reverse bias during growth) to study the corresponding variations in film microstructure. Standard nondestructive complementary characterization tools such as scanning electron microscopy, x-ray diffraction, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy were utilized to obtain a coherent and comprehensive picture of the microstructure of these films. Through these studies we obtained an integral picture of the material grown and learned how to control key material properties such as surface morphology (faceted versus evenly smooth), grain size (microcrystalline versus nanocrystalline), surface roughness (from rough 150 rms to smooth 70 rms), and bonding configuration (sp3 C versus sp2 C), which result in physical properties relevant for several technological applications. These findings also indicate that there exist fundamental differences between HFCVD and microwave CVD (MWCVD) for methane concentrations above 1%, whereas some similarities are drawn among films grown by ion-beam assisted deposition, HFCVD assisted by low-energy particle bombardment, and MWCVD using noble gas in replacement of traditionally used hydrogen.

Complex XPS and Raman Study of Graphene on Copper and Si/SiO2 Subjected to Ar Ion Treatment

2016 ◽  
Vol 721 ◽  
pp. 258-262 ◽  
Author(s):  
Tatiana Larionova ◽  
Tatiana Koltsova ◽  
Mariya Kozlova ◽  
Vladimir Levitskii ◽  
Ilya Eliseyev ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
X Ray ◽  
Raman Study ◽  
Grown Graphene ◽  
The One ◽  
Ion Treatment

Graphene grown by chemical vapor deposition on copper and the one transferred to Si/SiO2 substrate were subjected to Ar ion treatment. A combination of X-ray photoelectron spectroscopy and Raman spectroscopy were used for characterization. According to XPS data sample on Si/SiO2 appears less susceptible to sputtering under bombardment. However, the defect concentrations introduced to the transferred graphene reach up the value two orders of magnitude higher than that in as grown graphene on Cu. We attribute this difference to the influence of the non-compensated charge formed on the insulating SiO2 layer under bombardment.

A soft X-ray absorption study of nanodiamond films prepared by hot-filament chemical vapor deposition

2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Study ◽  
X Ray ◽  
Hot Filament ◽  
X Ray Absorption

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

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