Phase transition behaviors of Mo- and nitrogen-doped Ge2Sb2Te5 thin films investigated by in situ electrical measurements

2009 ◽  
Vol 106 (3) ◽  
pp. 034916 ◽  
Author(s):  
Yu-Jen Huang ◽  
Yen-Chou Chen ◽  
Tsung-Eong Hsieh
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Electrical Measurements ◽  
Nitrogen Doped

Effect of Deposition Conditions on Intrinsic Stress, Phase Transformation and Stress Relaxation in Tantalum Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Compressive Stress ◽  
Stress Relief ◽  
Beta Phase ◽  
Alpha Phase ◽  
Intrinsic Stress

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.

Vibrational and Electronic Properties of RbC60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
G.P. Lopinski ◽  
M.G. Mitch ◽  
J.R. Fox ◽  
J.S. Lannin
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Electronic States ◽  
Orthorhombic Phase ◽  
Low Energy ◽  
Polymer Model ◽  
In Situ Raman ◽  
Intramolecular Vibrations ◽  
Two Phases

ABSTRACTIn situ Raman scattering, UPS and HREELS measurements have been used to study the fcc to orthorhombic phase transition in RbC60 thin films. Large changes in the Raman spectra are interpreted in terms of increased interfullerene coupling in the orthorhombic phase. However, the data do not support the proposed polymer model for this phase. Photoemission measurements indicate only small differences in the electronic states between the two phases in contrast with photopolymerized C60 where additional states are observed. Low energy metallic-like excitations and screening of intramolecular vibrations are observed in HREELS.

A SYNCHROTRON RADIATION STUDY OF THE FORMATION OF CuxSey AND NaxCuySez THIN FILMS ON Cu SUBSTRATES: Cl2-INDUCED OUT-DIFFUSION OF Na

2000 ◽  
Vol 07 (03) ◽  
pp. 235-242 ◽  
Author(s):  
V. SALTAS ◽  
C. A. PAPAGEORGOPOULOS ◽  
D. C. PAPAGEORGOPOULOS ◽  
D. TONTI ◽  
C. PETTENKOFER ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Synchrotron Radiation ◽  
Copper Selenide ◽  
Photoemission Spectroscopy ◽  
Radiation Study ◽  
Cu Substrates ◽  
Compound Exposure ◽  
Selenide Film

In this paper we study the growth of Cu x Se y and Na x Cu y Se z thin films on polycrystalline Cu substrates. The investigation took place in situ by means of photoemission spectroscopy with synchrotron radiation, in UHV. Deposition of elemental Se with a dense flux on a polycrystalline Cu substrate at RT and subsequent heating to 100°C causes the formation of a thick Cu 2-x Se film (with x equal or very close to zero). A phase transition of this copper selenide occurs by annealing at 200°C. Deposited Na on the Cu 2-x Se film is diffused into the bulk, resulting in the formation of a Na x Cu y Se z compound. Exposure to Cl 2 at 120°C causes the out-diffusion of Na to the surface, where NaCl is formed. The Na diffusion in and out of the copper selenide film is analogous to alkali intercalation–deintercalation from TX 2 layer compounds.

Pressure induced semiconductor–metal phase transition in GaAs: experimental and theoretical approaches

RSC Advances ◽  
2016 ◽  
Vol 6 (12) ◽  
pp. 10144-10149 ◽  
Author(s):  
Jia Wang ◽  
Baojia Wu ◽  
Guozhao Zhang ◽  
Lianhua Tian ◽  
Guangrui Gu ◽  
...  
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
First Principles ◽  
Metal Phase ◽  
First Principles Calculations ◽  
Electrical Measurements ◽  
Theoretical Approaches ◽  
Metal Phase Transition

GaAs undergoes a semiconductor–metal transition, which was investigated by in situ electrical measurements and first-principles calculations under a high pressure.

Surface morphology studies of phthalocyanine thin films: mechanism of the α → β1 phase transition

2000 ◽  
Vol 620 ◽  
Author(s):  
Sandrine Heutz ◽  
Sallie M. Bayliss ◽  
Garry Rumbles ◽  
Tim S. Jones
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Molecular Beam ◽  
Morphological Properties ◽  
Free Base ◽  
Glass Substrates ◽  
Atomic Force ◽  
Molecular Beam Deposition ◽  
Beam Deposition

ABSTRACTFree base phthalocyanine films have been grown on glass substrates by organic molecular beam deposition. In situ post-growth annealing of the samples leads to the α → β1 transformation. Different transition states have been identified and their morphological properties studied by atomic force and optical microscopy. The transition occurs via a discrete number of nucleations and is preceded by an elongation of the α crystallites. The β1 crystallites grow but are confined to domains of similar orientation. Increased thickness produces larger domains and better orientation, while only partial transformation occurs below 94 nm.

Formation of TiO2 Thin Films by Oxidation of TiN

1992 ◽  
Vol 282 ◽  
Author(s):  
J. K. Truman ◽  
P. H. Ballentine ◽  
E. Terzioglu ◽  
A. M. Kadin
Keyword(s):  
Thin Films ◽  
Relative Dielectric Constant ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Tio2 Thin Films ◽  
Si Substrates ◽  
Diffusion Limited ◽  
Device Processing ◽  
Tin Thin Films

ABSTRACTTiN thin films were deposited by reactive sputtering onto Si substrates. TiO2 films were formed by subsequent oxidation of the TiN films, using either conventional furnace heating or rapid thermalprocessing (RTP). The materials properties of the resulting films were characterized by x-ray diffraction and Rutherford backscattering, and indicate conversion of the TiN to fully-oxidized rutile TiO2 by a diffusion-limited process. Electrical measurements of the insulating properties of the TiO2 films indicated a relative dielectric constant greater than 100, although the leakage current was greater than optimum. A fully in-situ process for the fabrication of microcapacitors is proposed, which involves the sputter deposition of TiN, the formation of TiO2 by RTP, and the deposition of a top TiN counterelectrode. This can be carried out under conditions that are compatible with Si microelectronic device processing.

scholarly journals Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire

Nanoscale ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 851-863 ◽  
Author(s):  
Tiziana Cesca ◽  
Carlo Scian ◽  
Emilija Petronijevic ◽  
Grigore Leahu ◽  
Roberto Li Voti ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Optical Characterization ◽  
Optical Measurements ◽  
Metal Phase ◽  
Metal Phase Transition ◽  
Vo2 Thin Films

In situ XRD and IR optical measurements demonstrate the coexistence of M1 and R phases during the SMT transition of VO2 thin films.

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