High density recorded patterns observed by high-resolution Bitter scanning electron microscope method

1996 ◽  
Vol 79 (8) ◽  
pp. 6074 ◽  
Author(s):  
O. Kitakami ◽  
T. Sakurai ◽  
Y. Shimada
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
High Density ◽  
Scanning Electron Microscope Method ◽  
Scanning Electron

Field Emission SEM Equipped With Noise Compensator

1973 ◽  
Vol 31 ◽  
pp. 302-303
Author(s):  
S. Saito ◽  
H. Todokoro ◽  
S. Nomura ◽  
T. Komoda
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Low Contrast ◽  
Probe Current ◽  
High Resolution Images ◽  
Scanning Electron

Field emission scanning electron microscope (FESEM) features extremely high resolution images, and offers many valuable information. But, for a specimen which gives low contrast images, lateral stripes appear in images. These stripes are resulted from signal fluctuations caused by probe current noises. In order to obtain good images without stripes, the fluctuations should be less than 1%, especially for low contrast images. For this purpose, the authors realized a noise compensator, and applied this to the FESEM.Fig. 1 shows an outline of FESEM equipped with a noise compensator. Two apertures are provided gust under the field emission gun.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

A Working Method for Adapting the (SEM) Scanning Electron Microscope to Produce (STEM) Scanning Transmission Electron Microscope Images

2002 ◽  
Author(s):  
Edward Coyne
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Theoretical Idea ◽  
Cross Sectional ◽  
Additional Advantage ◽  
Transmission Electron ◽  
Resolution Element ◽  
Scanning Electron

Abstract This paper describes the problems encountered and solutions found to the practical objective of developing an imaging technique that would produce a more detailed analysis of IC material structures then a scanning electron microscope. To find a solution to this objective the theoretical idea of converting a standard SEM to produce a STEM image was developed. This solution would enable high magnification, material contrasting, detailed cross sectional analysis of integrated circuits with an ordinary SEM. This would provide a practical and cost effective alternative to Transmission Electron Microscopy (TEM), where the higher TEM accelerating voltages would ultimately yield a more detailed cross sectional image. An additional advantage, developed subsequent to STEM imaging was the use of EDX analysis to perform high-resolution element identification of IC cross sections. High-resolution element identification when used in conjunction with high-resolution STEM images provides an analysis technique that exceeds the capabilities of conventional SEM imaging.

Microstructures of Low Angle Boundaries of the Second Generation Single Crystal Superalloy DD6

2011 ◽  
Vol 284-286 ◽  
pp. 1584-1587
Author(s):  
Zhen Xue Shi ◽  
Jia Rong Li ◽  
Shi Zhong Liu ◽  
Jin Qian Zhao
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Thin Layer ◽  
Single Crystal ◽  
Second Generation ◽  
Three Dimensional ◽  
Single Crystal Superalloy ◽  
Transition Electron ◽  
Scanning Electron

The specimens of low angle boundaries were machined from the second generation single crystal superalloy DD6 blades. The microstructures of low angle boundaries (LAB) were investigated from three scales of dendrite, γ′ phase and atom with optical microscopy (OM), scanning electron microscope (SEM), transition electron microscope (TEM) and high resolution transmission electrion microscopy (HREM). The results showed that on the dendrite scale LAB is interdendrite district formed by three dimensional curved face between the adjacent dendrites. On the γ′ phase scale LAB is composed by a thin layer γ phase and its bilateral imperfect cube γ′ phase. On the atom scale LAB is made up of dislocations within several atom thickness.

scholarly journals A Comparative Study on the Corrosion Inhibition of Mild Steel and Aluminium by Synthesized Inhibitors in Organic Acidic Medium

2020 ◽  
pp. 41-51
Author(s):  
Lalita Saini ◽  
R. K. Upadhyay
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Mild Steel ◽  
Corrosion Inhibition ◽  
Acidic Medium ◽  
Trichloroacetic Acid ◽  
Inhibition Efficiency ◽  
Corrosion Inhibition Efficiency ◽  
Scanning Electron Microscope Method ◽  
Scanning Electron

Mass loss and Scanning Electron Microscope method (SEM) have been used to study the corrosion inhibition efficiency on mild steel and aluminium using synthesized inhibitors i.e. N-Benzylidene aniline (CI1) and N-Benzylidene 4-methylaniline (CI2) in Trichloroacetic acid (TCAA). Study reveals that both mild steel and aluminium are prone to corrosion in organic acid like TCAA. Out of these two metals, aluminium is more vigorously corroded by the TCAA in comparison to mild steel in same conditions and synthesized inhibitors CI1 and CI2 are almost same effective for mild steel and aluminium.

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