scholarly journals Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization

1999 ◽  
Vol 85 (9) ◽  
pp. 6898-6903 ◽  
Author(s):  
Joon Seop Kwak ◽  
Hong Koo Baik ◽  
Jong-Hoon Kim ◽  
Sung-Man Lee ◽  
Hyuk Ju Ryu ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Cu Metallization

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Diffusion barrier performance of amorphous W–Ti–N films in Cu metallization

Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1270-1274 ◽  
Author(s):  
Wang Qingxiang ◽  
Liang Shuhua ◽  
Wang Xianhui ◽  
Fan Zhikang
Keyword(s):  
Diffusion Barrier ◽  
Cu Metallization ◽  
Barrier Performance
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