Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement

2013 ◽  
Vol 103 (3) ◽  
pp. 033512 ◽  
Author(s):  
G. Chen ◽  
A. M. Hoang ◽  
S. Bogdanov ◽  
A. Haddadi ◽  
P. R. Bijjam ◽  
...  
Keyword(s):  
Type Ii ◽  
Voltage Measurement ◽  
Capacitance Voltage

scholarly journals Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
M. R. Balboul ◽  
A. Abdel-Galil ◽  
I. S. Yahia ◽  
A. Sharaf
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Electrical Response ◽  
Charge Carrier Concentration ◽  
Flat Band ◽  
Voltage Measurement ◽  
Deep Traps ◽  
Cds Thin Film ◽  
Depth Analysis ◽  
Capacitance Voltage

Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose ofγ-irradiation increases the activation energy of CdS thin film. In addition,γ-irradiation was used to change the sign of Hall coefficient,RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change afterγ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap afterγ-irradiation. Several parameters were also studied such as charge carrier concentration,ND, and flat band potential,Vfb. Theγ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells

2011 ◽  
Vol 109 (7) ◽  
pp. 073702 ◽  
Author(s):  
S. D. Singh ◽  
V. K. Dixit ◽  
Shailesh K. Khamari ◽  
Ravi Kumar ◽  
A. K. Srivastava ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Quantum States ◽  
Band Offset ◽  
Type Ii ◽  
Conduction Band Offset ◽  
Capacitance Voltage

Integration between LiNbO3 Ferroelectric Film and AlGaN/GaN System

2011 ◽  
Vol 687 ◽  
pp. 303-308 ◽  
Author(s):  
L. Z. Hao ◽  
Jun Zhu ◽  
Y. R. Li
Keyword(s):  
Electron Concentration ◽  
Electron Mobility ◽  
Ferroelectric Film ◽  
Ferroelectric Polarization ◽  
Uniform Domain ◽  
Voltage Measurement ◽  
Ferroelectric Films ◽  
External Bias ◽  
Capacitance Voltage ◽  
Gan Heterostructure

LiNbO3 film (LNO)/AlGaN/GaN heterostructure was fabricated epitaxially. The preferable C+ oriented domains in LNO film lead to the formation of the spontaneous ferroelectric polarization. As a result, the sheet electron concentration of the 2DEG (ns) decreased from 1.13×1013 cm-2 to 1.04×1013 cm-2 when a LNO film deposited on the AlGaN/GaN. The ns decreased nonlinearly with decreasing the temperature. Additionally, the electron mobility for the LNO/AlGaN/GaN heterostructure decreased greatly compared with that for AlGaN/GaN heterostructure, which was caused by the non-uniform domain structure in the LNO film. By external bias switching the ferroelectric polarization, the relative enhancement of the 2DEG, about 7.68×1011/cm2, could be accessible from capacitance-voltage measurement. These results indicated that ferroelectric films combined with AlGaN/GaN would hold promise for next-generation GaN-based memory devices.

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