O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Atomic Layer ◽

High Electron ◽

High Quality ◽

Metal Insulator ◽

High Electron Mobility ◽

Layer Deposition ◽

Al2o3 Gate Dielectric

Atomic layer deposition of ZrO2as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Applied Physics Letters ◽

10.1063/1.4824445 ◽

2013 ◽

Vol 103 (14) ◽

pp. 142109 ◽

Cited By ~ 45

Author(s):

G. Ye ◽

H. Wang ◽

S. Arulkumaran ◽

G. I. Ng ◽

R. Hofstetter ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectrics ◽

Atomic Layer ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

10.7567/jjap.54.04df02 ◽

2015 ◽

Vol 54 (4S) ◽

pp. 04DF02 ◽

Cited By ~ 6

Author(s):

Nicolò Ronchi ◽

Brice De Jaeger ◽

Marleen Van Hove ◽

Robin Roelofs ◽

Tian-Li Wu ◽

...

Keyword(s):

Gate Dielectric ◽

Atomic Layer ◽

High Electron ◽

Threshold Voltage Shift ◽

High Electron Mobility ◽

Si Substrates ◽

Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors

10.7567/jjap.52.11ng04 ◽

2013 ◽

Vol 52 (11S) ◽

pp. 11NG04 ◽

Cited By ~ 10

Author(s):

Shiro Ozaki ◽

Toshihiro Ohki ◽

Masahito Kanamura ◽

Naoya Okamoto ◽

Toshihide Kikkawa

Keyword(s):

Atomic Layer ◽

High Electron ◽

Deposition Method ◽

Threshold Voltage Shift ◽

Metal Insulator ◽

High Electron Mobility ◽

Layer Deposition ◽

Atomic Layer Deposition Method

AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with thermal atomic layer deposition AlN gate dielectric

10.7567/jjap.57.096502 ◽

2018 ◽

Vol 57 (9) ◽

pp. 096502 ◽

Cited By ~ 4

Author(s):

Lin-Qing Zhang ◽

Peng-Fei Wang

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

10.7567/jjap.56.094101 ◽

2017 ◽

Vol 56 (9) ◽

pp. 094101

Author(s):

Yu Sheng Chiu ◽

Quang Ho Luc ◽

Yueh Chin Lin ◽

Jui Chien Huang ◽

Chang Fu Dee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

Rf Power ◽

High Electron Mobility ◽

Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Applied Physics Express ◽

10.7567/apex.8.084101 ◽

2015 ◽

Vol 8 (8) ◽

pp. 084101 ◽

Cited By ~ 1

Author(s):

Po-Chun Yeh ◽

Yun-Wei Lin ◽

Yue-Lin Huang ◽

Jui-Hung Hung ◽

Bo-Ren Lin ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Threshold Voltage ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Layer Deposition ◽

Gate Recess

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

10.7567/jjap.54.020301 ◽

2015 ◽

Vol 54 (2) ◽

pp. 020301 ◽

Cited By ~ 5

Author(s):

Toshiharu Kubo ◽

Joseph J. Freedsman ◽

Yusuke Yoshida ◽

Takashi Egawa

Keyword(s):

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Layer Deposition ◽

Current Voltage ◽

Current Voltage Characteristics

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Nanoscale Research Letters ◽

10.1186/s11671-016-1448-z ◽

2016 ◽

Vol 11 (1) ◽

Cited By ~ 31

Author(s):

Huan-Yu Shih ◽

Fu-Chuan Chu ◽

Atanu Das ◽

Chia-Yu Lee ◽

Ming-Jang Chen ◽

...

Keyword(s):

Gallium Oxide ◽

Gate Dielectrics ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition

Applied Physics Express ◽

10.7567/apex.9.071003 ◽

2016 ◽

Vol 9 (7) ◽

pp. 071003 ◽

Cited By ~ 15

Author(s):

Travis J. Anderson ◽

Virginia D. Wheeler ◽

David I. Shahin ◽

Marko J. Tadjer ◽

Andrew D. Koehler ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4929818 ◽

2015 ◽

Vol 107 (8) ◽

pp. 081608 ◽

Cited By ~ 12

Author(s):

Xiaoye Qin ◽

Robert M. Wallace

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

Half Cycle ◽

High Electron Mobility ◽