Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors
2013 ◽
Vol 52
(11S)
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pp. 11NG04
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2015 ◽
Vol 54
(4S)
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pp. 04DF02
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2015 ◽
Vol 54
(2)
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pp. 020301
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