Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
2015 ◽
Vol 54
(4S)
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pp. 04DF02
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2015 ◽
Vol 54
(2)
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pp. 020301
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2013 ◽
Vol 52
(11S)
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pp. 11NG04
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2011 ◽
Vol 8
(7-8)
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pp. 2445-2447
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