scholarly journals The effects of annealing temperature and heating rate on Ta/TbFeCo bilayers

AIP Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 125316 ◽  
Author(s):  
Lin-Xiu Ye ◽  
Ramesh C. Bhatt ◽  
Ching-Ming Lee ◽  
Shih-Min Chang ◽  
Te-ho Wu
Keyword(s):  
Heating Rate ◽  
Annealing Temperature

scholarly journals Transparent TiO2/Cu/TiO2 Multilayer for Electrothermal Application

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1024
Author(s):  
Jingjing Peng ◽  
Changshan Hao ◽  
Hongyan Liu ◽  
Yue Yan
Keyword(s):  
Optical Properties ◽  
Heating Rate ◽  
Figure Of Merit ◽  
Annealing Temperature ◽  
Critical Thickness ◽  
Experimental Results ◽  
Tio2 Layer ◽  
Electrical And Optical Properties ◽  
Partial Crystallization

Highly transparent indium-free multilayers of TiO2/Cu/TiO2 were obtained by means of annealing. The effects of Cu thickness and annealing temperature on the electrical and optical properties were investigated. The critical thickness of Cu mid-layer with optimal electrical and optical properties was 10 nm, with the figure of merit reaching as high as 5 × 10−3 Ω−1. Partial crystallization of the TiO2 layer enhanced the electrical and optical properties upon annealing. Electrothermal experiments showed that temperatures of more than 100 °C can be reached at a heating rate of 2 °C/s without any damage to the multilayers. The experimental results indicate that reliable transparent TiO2/Cu/TiO2 multilayers can be used for electrothermal application.

Effect of annealing temperature and heating rate on the magnetic and mechanical properties of electrical steel

1996 ◽  
Vol 160 ◽  
pp. 133-135 ◽  
Author(s):  
X. Duan ◽  
H. Huneus ◽  
T. Kochmann ◽  
K. Leuridan ◽  
R. Kaczmarek ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Heating Rate ◽  
Annealing Temperature ◽  
Electrical Steel

The Effect of Final Annealing Heating Rate on Abnormal Grain Growth in a Fe-3.5%Si Steel

2016 ◽  
Vol 879 ◽  
pp. 350-355
Author(s):  
Fatayalkadri Citrawati ◽  
Md Zakaria Quadir ◽  
Paul Munroe
Keyword(s):  
Grain Size ◽  
Heating Rate ◽  
Grain Growth ◽  
Growth Kinetics ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Rapid Heating ◽  
Secondary Recrystallization ◽  
Recrystallization Annealing ◽  
Final Annealing

In this study the effects of heating rate on the sharpness and size of Goss oriented ({110}<001>) grains during secondary recrystallization annealing at 900 °C was observed. The results show that, at the same annealing temperature, rapid heating of the samples to this temperature generates a higher drag force compared to a slower heating rate (5°C/min). The two groups of samples show different growth kinetics for Goss grains, in which at the longest annealing time, the rapid heating sample exhibits larger maximum Goss grain size compared to the slower heated samples.

Effect of heating rate, impurity concentration of Cu, atomic number, temperatures, time annealing temperature on the structure, crystallization temperature and crystallization process of Ni1−xCux bulk; x = 0.1, 0.3, 0.5, 0.7

2018 ◽  
Vol 32 (26) ◽  
pp. 1830009 ◽  
Author(s):  
Tran Quoc Tuan ◽  
Nguyen Trong Dung
Keyword(s):  
Heating Rate ◽  
Crystallization Temperature ◽  
Impurity Concentration ◽  
Crystallization Process ◽  
Annealing Temperature ◽  
Structural Characteristics ◽  
Amorphous State ◽  
Atom Number ◽  
Structure Unit ◽  
Temperature Crystallization

This paper studies the effects of heating rate 4 × 10[Formula: see text] K/s, 4 × 10[Formula: see text] K/s, 4 × 10[Formula: see text] K/s; impurity concentration of Cu on Ni[Formula: see text]Cu[Formula: see text] bulk with x = 0.1, x = 0.3, x = 0.5, x = 0.7; atom number (N), N = 4000 atoms, 5324 atoms, 6912 atoms, 8788 atoms at temperatures (T), T = 300 K; N = 6912 atoms at T = 300 K, 400 K, 500 K, 600 K, 700 K, 800 K; N = 6912 atoms at T = 600 K after time annealing temperature (t), t = 500 ps on the structure, crystallization temperature and crystallization process of Ni[Formula: see text]Cu[Formula: see text] bulk by molecular dynamics (MD) method with interactive embedding Sutton–Chen (ST) and periodic boundary conditions. The structural characteristics were analyzed through radial distribution function (RDF), energy total (E[Formula: see text]), size (l) and common neighborhood analysis (CNA) method; temperature (T), crystallization temperature (T[Formula: see text]), crystallization process through relationship between E[Formula: see text], T. The results showed Ni[Formula: see text]Cu[Formula: see text] bulk and links Ni–Ni, Ni–Cu, Cu–Cu always exist in 03 types structures: FCC, HCP, Amor. When time annealing temperature increases then Ni[Formula: see text]Cu[Formula: see text] bulk moves from a crystalline state to an amorphous state. When increases impurity concentration of Cu in Ni[Formula: see text]Cu[Formula: see text] bulk, then the structure unit number FCC, HCP decreases and then increases, structure unit number Amor increases and then decreases. When atom number (N) increases, decreasing T and increasing time annealing temperature lead to structure unit number FCC, HCP increases, Amor decreases and structural, crystallization temperature, crystallization process of Ni[Formula: see text]Cu[Formula: see text] bulk change.

Effect of Annealing on Magnetic Properties and Domain Structures of FePt Thin Films by Rapid Thermal Annealing Technique

2009 ◽  
Vol 79-82 ◽  
pp. 911-914
Author(s):  
S.C. Chen ◽  
T.H. Sun ◽  
Po Cheng Kuo
Keyword(s):  
Grain Size ◽  
Magnetic Properties ◽  
Heating Rate ◽  
Domain Structure ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Annealing Temperature ◽  
High Heating Rate ◽  
Fept Film ◽  
High Heating

Single-layered FePt films of 30 nm thick were annealed at temperature between 300 and 800 °C for 1–180 sec by a rapid thermal annealing (RTA) with a high heating rate of 100 °C/sec. It is found that both the grain size and magnetic domain size of the FePt film increase with increasing annealing temperature and annealing time. The FePt films exhibited soft magnetic properties and without domain images were observed by magnetic force microscope (MFM) when the films were post-annealed at below 500 °C for 180 sec. The in-plane coercivity (Hc//) and perpendicular coercivity (Hc⊥) of FePt film increases significantly to 7.5 and 6.5 kOe respectively as annealing temperature increases to 600 °C. When the annealing temperature is increased to 700 °C, they are increased to 11.1 and 9.5 kOe, respectively, and the domain structure inclines to isolated domain. However, further increasing the annealing temperature to 800 °C, the Hc// and Hc⊥ values decrease to 9.8 and 8.9 kOe respectively due to largely increase the grain size of FePt and change the domain structure from isolation to continuity. On the other hand, in order to transform the FePt film from disordered γ phase to the ordered L10 phase, the annealing time of over 3 seconds is necessary when the film was post-annealed at 700 °C with a high heating rate of 100 °C/sec by RTA technique.

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