High-mobility n−-GaN drift layer grown on Si substrates

2021 ◽  
Vol 118 (22) ◽  
pp. 222106
Author(s):  
Jianfei Shen ◽  
Xuelin Yang ◽  
Huayang Huang ◽  
Danshuo Liu ◽  
Zidong Cai ◽  
...  
Keyword(s):  
High Mobility ◽  
Si Substrates ◽  
Drift Layer

MBE Growth of Low Dislocation and High Mobility GaAs-on-Si

1986 ◽  
Vol 67 ◽  
Author(s):  
Jhang Woo Lee
Keyword(s):  
Layer Structure ◽  
High Mobility ◽  
Gaas Layer ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Low Dislocation Density ◽  
Molecular Beam Epitaxial Growth

ABSTRACTData is presented on the optimization of several molecular beam epitaxial growth processes to provide low dislocation density and high mobility GaAs single crystals on (100) Si wafers. The substrate tilt angle, the growth temperature, and the first buffer layer structure, were investigated Tor this purpose. Using Hall measurements the GaAs layers grown on 2 or 3-degree tilt (100) Si showed consistently high mobilities which are equivalent to the homoepitaxial GaAs mobility. Transmission electron microscopy (TEM) revealed that on tilted (100) Si substrates most of the misfit dislocations were confined within the first 50 Å GaAs layer by forming a type of edge dislocation at the Si surface step edges. Also low temperature grown buffer layers always gave better morphologies and lower etch pit densities while keeping the high mobilities on overgrown GaAs layers.

High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance

1994 ◽  
Vol 37 (4-6) ◽  
pp. 949-952 ◽  
Author(s):  
C.M. Engelhardt ◽  
D. Többen ◽  
M. Aschauer ◽  
F. Schäffler ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
High Mobility ◽  
Si Substrates

Epitaxial Growth of 2 inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD

2004 ◽  
Vol 815 ◽  
Author(s):  
Jiliang Zhu ◽  
Yi Chen ◽  
Yusuke Mukai ◽  
Akira Shoji ◽  
Taro Nishiguchi ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Flow Direction ◽  
High Mobility ◽  
Ultra Violet ◽  
Optical Pyrometer ◽  
Great Promise ◽  
Flow Profile ◽  
Uniform Thickness ◽  
Si Substrates

AbstractAs a high mobility, wide bandgap semiconductor, 3C-SiC has great promise. In this paper, we examined to obtain 3C-SiC epilayer on Si substrates using hot-wall CVD furnace and report the use of hexamethyledisilane (HMDS) and propane as reaction gases to grow uniform thickness on 2 inch (100), (111), (110) and (211) orientation of Si substrates. A horizontal atmospheric pressure CVD reactor was used. A reaction zone was specially designed. To obtain uniform thickness of the epilayer, inside of the suscceptor hole was intentionally tapered along flow direction as follows; inlet of the square hole is 13 mm × 60 mm and outlet of the hole is 7 mm × 60 mm, and laminar channel for changing the gas flow profile was managed. The susceptor was surrounded by graphite foam. Temperature of the suscepotor was measured at inside wall of the susceptor by optical pyrometer. H2 flow rate for etching was 3 slm. An initial carbonization procedure was performed using 0.9 sccm propane at 1250 oC for 2-3 minutes. During the growth of SiC at 1300 °C, the flow rate of HMDS was 0.75-1.2 sccm and the flow rate of propane was 0.1 – 0.5 sccm. The hydrogen carrier gas flow rate was 3-10 slm. Typical growth rate was 4.5 micron /h. Uniform thick 3C-SiC was obtained. The samples were examined using ultra violet light spectrometer and RHEED.

High Mobility Ge-Based CMOS Device Technologies

2011 ◽  
Vol 470 ◽  
pp. 1-7 ◽  
Author(s):  
Shinichi Takagi ◽  
Sanjeewa Dissanayake ◽  
Mitsuru Takenaka
Keyword(s):  
Gas Phase ◽  
High Mobility ◽  
Surface Orientation ◽  
Interface Properties ◽  
Gate Stacks ◽  
High Quality ◽  
Si Substrates ◽  
Interface Defects ◽  
Critical Issues ◽  
Doping Technique

In this paper, we report on critical issues and possible solutions for realizing Ge MOSFETs on the Si platform. The main critical objectives in regard to Ge MOSFETs are (1) formation of high quality Ge channel layers on Si substrates (2) MIS gate stacks with much smaller EOT and interface defects (3) superior source/drain junction technology (4) combination of mobility booster technologies such as surface orientation and strain. We demonstrate that GeO2/Ge MOS interfaces can provide superior interface properties, leading to high hole and electron mobility. It is also shown that a gas phase doping technique is promising for forming superior n+/p junctions, which is critical for obtaining Ge nMOSFETs. Also, the importance of surface orientation engineering on the further mobility enhancement of Ge CMOS is addressed.

scholarly journals Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography

2020 ◽  
Vol 4 (1) ◽  
Author(s):  
Péter Kun ◽  
Bálint Fülöp ◽  
Gergely Dobrik ◽  
Péter Nemes-Incze ◽  
István Endre Lukács ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Point Contact ◽  
High Mobility ◽  
Zero Magnetic Field ◽  
High Symmetry ◽  
Conductance Quantization ◽  
Si Substrates ◽  
Edge Quality ◽  
Quantum Point ◽  
Mechanical Cleavage

AbstractDetecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mobility devices. Here, we demonstrate a simple AFM-based nanopatterning technique for defining graphene constrictions with high precision (down to 10 nm width) and reduced edge-roughness (+/−1 nm). The patterning process is based on the in-plane mechanical cleavage of graphene by the AFM tip, along its high symmetry crystallographic directions. As-defined, narrow graphene constrictions with improved edge quality enable an unprecedentedly robust QPC operation, allowing the observation of conductance quantization even on standard SiO2/Si substrates, down to low conductance quanta. Conductance plateaus, were observed at n × e2/h, evenly spaced by 2 × e2/h (corresponding to n = 3, 5, 7, 9, 11) in the absence of an external magnetic field, while spaced by e2/h (n = 1, 2, 3, 4, 5, 6) in 8 T magnetic field.

scholarly journals High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

2004 ◽  
Vol 809 ◽  
Author(s):  
Carl Mueller ◽  
Samuel Alterovitz ◽  
Edward Croke ◽  
George Ponchak
Keyword(s):  
Atomic Force Microscopy ◽  
Field Effect ◽  
Room Temperature ◽  
High Mobility ◽  
Force Microscopy ◽  
Si Substrates ◽  
Enhancement Mode ◽  
Sapphire Substrates ◽  
Atomic Force

ABSTRACTSiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm2/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rms roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 μm gate lengths and 200 μm gate widths were fabricated and tested. An IDS of 9 mA was obtained by operating the transistor in an enhancement mode (positive VGS) and the maximum transconductance (gm) was 37 mS/mm at a VDS of 2.5 V. The transducer gain (Gt) measured with a loadpull system was 6.4 dB at 1 GHz for a VDS of 2.5 V and VGS=-0.4 V.

Growth of Ru2Si3 Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

2018 ◽  
Vol 386 ◽  
pp. 33-37 ◽  
Author(s):  
Kenta Setojima ◽  
Syuya Ikeda ◽  
Kazuya Ogi ◽  
Yoshikazu Terai
Keyword(s):  
Thin Films ◽  
Electron Density ◽  
Solid Phase ◽  
High Mobility ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Polycrystalline Thin Films ◽  
Ruthenium Silicide

Semiconducting ruthenium silicide (Ru2Si3) polycrystalline thin films were grown by solid phase epitaxy using Ru-Si amorphous layers on Si substrates. The formation of Ru2Si3 phase was confirmed by XRD and Raman measurements when the amorphous layers were annealed at 600−900 °C in a vacuum. The Ru2Si3 thin films showed a low electron density of 1 × 1016 cm-3 with a high mobility of 430−940 cm2V-1s-1. Photoluminescence (PL) at ~0.8 eV was observed in the Ru2Si3 films.

Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates

1999 ◽  
Vol 35 (6) ◽  
pp. 503 ◽  
Author(s):  
D. Reinking ◽  
M. Kammler ◽  
N. Hoffmann ◽  
M. Horn-von Hoegen ◽  
K.R. Hofmann
Keyword(s):  
High Mobility ◽  
Si Substrates
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