The many-beam theory of lattice image formation in transmission electron microscopy

1980 ◽  
Vol 41 (1) ◽  
pp. 33-40 ◽  
Author(s):  
By P. Pirouz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Beam Theory ◽  
Image Formation ◽  
Lattice Image ◽  
Transmission Electron ◽  
The Many

On Future Directions in Pathology

1982 ◽  
Vol 40 ◽  
pp. 274-277
Author(s):  
Benjamin F. Trump ◽  
Irene K. Berezesky ◽  
Raymond T. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Clinical Pathology ◽  
Future Directions ◽  
Diagnostic Pathology ◽  
The Past ◽  
Transmission Electron ◽  
Organ Systems ◽  
The Many

The role of electron microscopy and associated techniques is assured in diagnostic pathology. At the present time, most of the progress has been made on tissues examined by transmission electron microscopy (TEM) and correlated with light microscopy (LM) and by cytochemistry using both plastic and paraffin-embedded materials. As mentioned elsewhere in this symposium, this has revolutionized many fields of pathology including diagnostic, anatomic and clinical pathology. It began with the kidney; however, it has now been extended to most other organ systems and to tumor diagnosis in general. The results of the past few years tend to indicate the future directions and needs of this expanding field. Now, in addition to routine EM, pathologists have access to the many newly developed methods and instruments mentioned below which should aid considerably not only in diagnostic pathology but in investigative pathology as well.

Cryogenic Transmission Electron Microscopy: Aqueous Suspensions of Nanoscale Objects

2013 ◽  
Vol 19 (6) ◽  
pp. 1542-1553 ◽  
Author(s):  
Nathan D. Burrows ◽  
R. Lee Penn
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Self Assembly ◽  
Aqueous Samples ◽  
Liquid Media ◽  
Cryogenic Transmission Electron Microscopy ◽  
Transmission Electron ◽  
The Many

AbstractDirect imaging of nanoscale objects suspended in liquid media can be accomplished using cryogenic transmission electron microscopy (cryo-TEM). Cryo-TEM has been used with particular success in microbiology and other biological fields. Samples are prepared by plunging a thin film of sample into an appropriate cryogen, which essentially produces a snapshot of the suspended objects in their liquid medium. With successful sample preparation, cryo-TEM images can facilitate elucidation of aggregation and self-assembly, as well as provide detailed information about cells and viruses. This work provides an explanation of sample preparation, detailed examples of the many artifacts found in cryo-TEM of aqueous samples, and other key considerations for successful cryo-TEM imaging.

Tem Study of Pt Silicide Formation on Clean Si Surfaces

1983 ◽  
Vol 25 ◽  
Author(s):  
Y. Yokota ◽  
R. Matz ◽  
P.S. Ho
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Silicide Formation ◽  
Polycrystalline Structure ◽  
Epitaxial Relationship ◽  
Lattice Image ◽  
Transmission Electron ◽  
Image Technique

ABSTRACTThe microstructure of the Pt silicide formed on clean Si surfaces has been investigated using transmission electron microscopy. Pt up to 200Å was evaporated on atomically clean Si (100) and (111) substrates under an ultrahigh vacuum condition. The silicide was formed by annealing up to 600°C for (100) substrates in a purified He atmosphere and in-situ UHV for (111) substrates. For the (100) substrate, as-deposited Pt showed a fine polycrystalline structure with grain size of about 10tm. Upon annealing at 250° to 300°C, formation of Pt silicide was observed, which was primarily PtSi with only a small amount of Pt2Si. The silicide coverage was incomplete below about 1.5nm. Upon further annealing, the fraction of PtSi increased although Pt2Si persisted until 400°C. At 600°C, PtSi showed an epitaxial relationship with its c axis perpendicular to the Si (100) surface. On the Si (111) surface, PtSi formed epitaxially above 400°C. The silicide structure showed a multidiffraction pattern with three-fold symmetry, reflecting the three equivalent but strained epitaxial orientations. A high resolution lattice image technique was used to investigate the details of the epitaxial structures of PtSi on Si (100) and (111) substrates.

scholarly journals Lattice Image Contrast of Ordered Domains in Cu3Au

1974 ◽  
Vol 32 ◽  
pp. 500-501
Author(s):  
R. Sinclair ◽  
G. Thomas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Lattice ◽  
Fine Scale ◽  
Lattice Imaging ◽  
Lattice Image ◽  
Transmission Electron ◽  
Radiation Induced ◽  
Considerable Controversy ◽  
Lattice Planes

Although lattice Imaging was one of the first techniques in transmission electron microscopy of crystals, only with the improved resolution (≃2Å) of modern microscope has it become possible to obtain the lattice Image of metals as a matter of routine. To date fine-scale phenomena in alloys have been studied principally by relating the distortion of the fringe image to the defect in the crystal lattice ﹛e.g. dislocation, radiation induced damage, G-P zones etc. (2)﹜ but considerable controversy exists as to the validity of interpreting the fringes in terms of a one-to-one correspondence with the lattice planes in the specimen. One of the areas of research so Ear unexplored by this technique is the study of ordering reaction is alloy. The present paper demonstrates how it is particularly useful in this field especially in avoiding the controversy associated with the interpretation of fringe distortions.

scholarly journals Investigation of Lithiated Carbons by Transmission Electron Microscopy and X-Ray Diffraction Analysis

1998 ◽  
Vol 548 ◽  
Author(s):  
T. D. Tran ◽  
X. Y. Song ◽  
K. Kinoshita
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Carbon Black ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Lattice Image ◽  
X Ray ◽  
Storage Mechanism ◽  
Transmission Electron ◽  
Diffraction Patterns

ABSTRACTThe microstructures of lithiated synthetic graphite and carbon black were studied by high- resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) analysis. Information about the crystal structure of carbon containing various Li compositions can provide useful insights to our understanding of the Li storage mechanism in carbonaceous materials. Samples with compositions of Li0.93C6or Li0.45C6 were found to contain both stage-one and stage-two compounds. These observations are consistent with XRD data. The changes in sample microstructure as the results of lithiation and exposure to electron irradiation were observed by TEM and recorded over several minutes in the microscope environment. Selected area electron diffraction patterns indicated that the lithiated samples quickly changed composition to LiC 24, which appeared to dominate during the brief analysis period. The layer planes in the lattice image of a disordered carbon black after Li insertion are poorly defined, and changes in the microstructure of these lithiated carbons was not readily apparent. Observations on these lithium intercalation compounds as well as the limitation of the experimental procedure will be presented.

Domain and Interface Structures of Epitaxial PtSi

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Kawarada ◽  
I. Ohdomari ◽  
S. Horiuchi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Domain Boundary ◽  
Intermediate Region ◽  
Si Substrate ◽  
Crystalline Perfection ◽  
Lattice Image ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Interface Structures

ABSTRACTThe crystalline perfection of epitaxial PtSi thin films and the microstructure of the PtSi/Si interface have been examined using transmission electron microscopy (TEM), including lattice image techniques. Epitaxial PtSi layers grow with domains which have three different positions on a (111) Si substrate. Inside a domain the crystalline perfection is high, and at the domain boundary no intermediate region has been observed. The undulation of the PtSi/Si interface is larger than that of other epitaxial silicide/Si interfaces. Despite the large undulation, a cross-sectional lattice image shows the epitaxial layer extends to the interface. The interface is abrupt in the epitaxial PtSi/Si system.

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