Solid-phase epitaxy of implanted silicon at liquid nitrogen and room temperature induced by electron irradiation in the electron microscope

1990 ◽  
Vol 61 (3) ◽  
pp. 101-106 ◽  
Author(s):  
F. Corticelli ◽  
G. Lulli ◽  
P. G. Merli
Keyword(s):  
Electron Microscope ◽  
Liquid Nitrogen ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Lulli ◽  
P. G. Merli ◽  
M. Vittori Antisari
Keyword(s):  
Electron Irradiation ◽  
Cross Sections ◽  
Room Temperature ◽  
Diffusion Length ◽  
Solid Phase ◽  
Basic Mechanism ◽  
Radiation Defects ◽  
Solid Phase Epitaxy ◽  
Transmission Electron

ABSTRACTSolid-phase epitaxy of implanted Si is observed at room temperature during in situ electron irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross sections of samples containing different doping species show that: i) the basic mechanism of the process is the migration and recombination at the amorphous-crystalline interface of radiation defects coming both from the amorphous and crystalline side; ii) the diffusion length of such defects is of the order of 40 nm; iii) the regrowth rate is impurity dependent: a factor two exists between the faste

A Liquid Nitrogen Cooled Stage for STEM

1974 ◽  
Vol 32 ◽  
pp. 444-445
Author(s):  
Louis T. Germinario
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Objective Lens ◽  
Thermal Drift ◽  
Specimen Holder ◽  
Resolution Capability ◽  
Focal Position

A liquid nitrogen stage has been developed for the JEOL JEM-100B electron microscope equipped with a scanning attachment. The design is a modification of the standard JEM-100B SEM specimen holder with specimen cooling to any temperatures In the range ~ 55°K to room temperature. Since the specimen plane is maintained at the ‘high resolution’ focal position of the objective lens and ‘bumping’ and thermal drift la minimized by supercooling the liquid nitrogen, the high resolution capability of the microscope is maintained (Fig.4).

Crystalline to Amorphous Transformation of Fe3B By 1 MeV Electron Irradiation

1981 ◽  
Vol 7 ◽  
Author(s):  
A. Mogro-Campero ◽  
E.L. Hall ◽  
J.L. Walter ◽  
A.J. Ratkowski
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Rapid Quenching ◽  
Al Alloy ◽  
Bright Field ◽  
Transmission Electron ◽  
Diffraction Patterns

ABSTRACTSpecimens of amorphous Fe75B25 produced by rapid quenching from the melt were annealed to complete crystallization and subjected to 1 MeV electron irradiation in a transmission electron microscope at room temperature and at 130 K. The irradiation was interrupted at various intervals in order to obtain bright field images and diffraction patterns. The Fe3B crystals did not become amorphous at room temperature, even after damage levels of several dpa, whereas at 130 K the crystalline to amorphous transformation was observed to be complete at damage levels below 1 dpa. The results are combined with those of ion irradiation work on Fe3B; qualitative agreement is found between Fe3B and previous work on the Zr3Al alloy concerning their response to displacement damage by electron and ion irradiation.

Infrared Spectra of the Alkali Metal Cyanides in the Solid State

1973 ◽  
Vol 27 (2) ◽  
pp. 93-94 ◽  
Author(s):  
Zakya K. Ismail ◽  
Robert H. Hauge ◽  
John L. Margrave
Keyword(s):  
Solid State ◽  
Alkali Metal ◽  
Liquid Nitrogen ◽  
Infrared Spectra ◽  
Room Temperature ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Metal Cyanides ◽  
Sodium And Potassium

The infrared spectra of lithium isocyanide and of sodium and potassium cyanides in the solid phase were examined over the range 4000 to 140 cm−1 at room temperature. A study of the effect of cooling the solids to liquid nitrogen temperature has been carried out.

Extended near-IR Spectral Sensitivity and Electroluminescence Properties of Silicon Diode Structure with GaSb/Si Composite Layer

2016 ◽  
Vol 247 ◽  
pp. 61-65 ◽  
Author(s):  
Dmitry L. Goroshko ◽  
Alexander V. Shevlyagin ◽  
Evgeniy Anatolievich Chusovitin ◽  
Konstantin N. Galkin ◽  
Igor M. Chernev ◽  
...  
Keyword(s):  
Spectral Sensitivity ◽  
Wavelength Range ◽  
Room Temperature ◽  
Solid Phase ◽  
Composite Layer ◽  
Solid Phase Epitaxy ◽  
Silicon Matrix ◽  
Near Ir ◽  
Wide Wavelength Range ◽  
Integral Sensitivity

An array of GaSb nanocrystallites (NCs) was formed on Si(001) substrate by solid-phase epitaxy at 500 °C. Owing to the embedded GaSb NCs, p+‑Si/NC‑GaSb/n‑Si mesa diode spectral sensitivity has extended up to 1.6 µm at room temperature, and its integral sensitivity has increased by 4–5% in the wavelength range of 1200–1600 nm, as compared to a conventional Si diode. This result was achieved by embedding only 10 nm of GaSb in the form of NCs inside a silicon matrix. In addition, we could obtain a significant electroluminescence (EL) signal at 120 K in a very wide wavelength range from 1.3 to 2.1 µm (0.95–0.59 eV). The EL spectrum has a broad maximum at 1700 nm (0.73 eV). The threshold pumping current density was as low as 0.75 A/cm2.

Self-Organization of Cobalt-Silicide Nanoislands on Stepped Si(111) as a Function of Growth Method

2008 ◽  
Vol 8 (2) ◽  
pp. 801-805 ◽  
Author(s):  
I. Goldfarb ◽  
M. Levinshtein
Keyword(s):  
Size Effects ◽  
Room Temperature ◽  
Solid Phase ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Reactive Deposition ◽  
Growth Method ◽  
Single Electron Devices ◽  
Growth Methods

When silicides, such as CoSi2, are grown in the form of nanoislands they frequently exhibit nanometer size effects, which can be useful for single electron devices. For such devices, however, lateral self-organization is required. In this work, step-aided self-organization of CoSi2 nanoislands is demonstrated on a vicinal (stepped) Si(111) substrate. Straight and equidistant steps or step-bunches are routinely obtained on the vicinal Si(111), creating almost ideal template for self-organization. Two growth methods were examined: solid-phase epitaxy (SPE), where Co was deposited at room temperature and annealed to promote silicide formation, and reactive deposition epitaxy (RDE) where Co was deposited at elevated temperature. While the latter did not result in any noticeable ordering, due to instantaneous reaction with Si in course of deposition, the former lead to preferential occupation of step-bunch sites by the silicide nanoislands. Furthermore, self-limiting growth caused narrow distribution of island sizes and island–island separation distances.

Growth of Epitaxial CoSi2/Si Multilayers

1986 ◽  
Vol 77 ◽  
Author(s):  
B. D. Runt ◽  
N. Lewis ◽  
L. J. Schotalter ◽  
E. L. Hall ◽  
L. G. Turner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Solid Phase ◽  
Multilayer Structures ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Transmission Electron

ABSTRACTEpitaxial CoSi2/Si multilayers have been grown on Si(111) substrates with up to four bilayers of suicide and Si. To our knowledge, these are the first reported epitaxial metal-semiconductor multilayer structures. The growth of these heterostructures is complicated by pinhole formation in the suicide layers and by nonuniform growth of Si over the suicide films, but these problems can be controlled through nse of proper growth techniques. CoSi2 pinhole formation has been significantly reduced by utilizing a novel solid phase epitaxy technique in which room-temperature-deposited Co/Si bilayers are annealed to 600–650δC to form the suicide layers. Islanding in the Si layers is minimized by depositing a thin (<100Å) Si layer at room temperature with subsequent high temperature growth of the remainder of the Si. Cross-sectional transmission electron microscopy studies demonstrate that these growth procedures dramatically improve the continuity and quality of the CoSi. and Si multilayers.

Effect of Buried Surface Structure on Solid Phase Epitaxy of GE on SI (111)-7×7

1993 ◽  
Vol 317 ◽  
Author(s):  
Olof C. Hellman
Keyword(s):  
Thin Film ◽  
Surface Structure ◽  
Surface Reconstruction ◽  
Silicon Surface ◽  
Room Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Rich Phase ◽  
One Dimensional ◽  
Surface Steps

ABSTRACTWe study the crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Features of the silicon surface buried beneath the Ge film are shown to affect the rate of crystallization. In particular, solid phase epitaxy is observed to be enhanced at surface steps and defects in the surface reconstruction. It is further shown that one-dimensional crystallization patterns can be caused by impurity-Mediated crystallization. Precipitates of an impurity rich phase migrate in the plane of the film, leaving behind a crystalline trail. The Migration path of these precipitates is also dependent on the buried surface structure.

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