Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature
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ABSTRACTSolid-phase epitaxy of implanted Si is observed at room temperature during in situ electron irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross sections of samples containing different doping species show that: i) the basic mechanism of the process is the migration and recombination at the amorphous-crystalline interface of radiation defects coming both from the amorphous and crystalline side; ii) the diffusion length of such defects is of the order of 40 nm; iii) the regrowth rate is impurity dependent: a factor two exists between the faste
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1990 ◽
Vol 61
(3)
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pp. 101-106
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2019 ◽
Vol 34
(12)
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pp. 124004
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1992 ◽
Vol 50
(2)
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pp. 1352-1353
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2012 ◽
Vol 512-515
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pp. 1511-1515