Residual stress/strain analysis in thin films by X-ray diffraction

1995 ◽  
Vol 20 (2) ◽  
pp. 125-177 ◽  
Author(s):  
I. C. Noyan ◽  
T. C. Huang ◽  
B. R. York
MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.


2004 ◽  
Vol 443-444 ◽  
pp. 91-94 ◽  
Author(s):  
Thomas L. Christiansen ◽  
Marcel A.J. Somers

On evaluating lattice strain-depth or stress-depth profiles with X-ray diffraction, the variation of the information depth while combining various tilt angles, in combination with lattice spacing gradients leads to artefacts, so-called ghost or fictitious stresses. X-ray diffraction lattice-strain analysis was simulated for a model stress-depth profile combined with a composition-depth profile. Two principally different methods were investigated for the reconstruction of the actual stress and composition profiles from the simulated data: - considering the stress/strain determined at a specific depth as a weighted average over the actual stress/strain depth profile - considering the lattice spacing determined at a specific depth, for a specific value for as a weighted average over the actual lattice spacing profile for this direction. On the basis of the results it is possible to propose a preferred method for the evaluation of stress/strain and composition profiles, while minimising the risk for ghost stresses.


2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.


1993 ◽  
Vol 308 ◽  
Author(s):  
I. C. Noyan ◽  
G. Sheikh

ABSTRACTThe mechanical response of a specimen incorporating thin films is dictated by a combination of fundamental mechanical parameters such as Young's moduli of the individual layers, and by configurational parameters such as adhesion strength at the interface(s), residual stress distribution and other process dependent factors. In most systems, the overall response will be dominated by the properties of the (much thicker) substrate. Failure within the individual layers, on the other hand, is dependent on the local strain distributions and can not be predicted from the substrate values alone. To better understand the mechanical response of these systems, the strain within the individual layers of the thin film system must be measured and correlated with applied stresses. Phase selectivity of X-ray stress/strain analysis techniques is well suited for this purpose. In this paper, we will review the use of the traditional x-ray stress/strain analysis methods for the determination of the mechanical properties of thin film systems.


1988 ◽  
Vol 130 ◽  
Author(s):  
Carla J. Shute ◽  
J. B. Cohen ◽  
D. A. Jeannottea

AbstractResidual stress has been measured as a function of layer thickness in thin films of an Al alloy on oxidized Si by the x-ray “d” versus sin2ψ technique. Samples with and without a passivation layer were examined. The results show an increase in residual stress with decreasing film thickness for the passivated samples and indicates that the interface between the metal film and SiO2 may be a region of high stress.


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