Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries.

Download Full-text

TOTAL-DOSE AND SINGLE-EVENT EFFECTS IN SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS

Selected Topics in Electronics and Systems - Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices ◽

10.1142/9789812794703_0013 ◽

2004 ◽

pp. 205-217

Author(s):

JOHN D. CRESSLER

Keyword(s):

Total Dose ◽

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors ◽

Single Event ◽

Single Event Effects

Download Full-text

TOTAL-DOSE AND SINGLE-EVENT EFFECTS IN SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156404002478 ◽

2004 ◽

Vol 14 (02) ◽

pp. 489-501

Author(s):

JOHN D. CRESSLER

Keyword(s):

Ionizing Radiation ◽

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Radiation Effects ◽

Bipolar Transistors ◽

Electronic Systems ◽

Single Event ◽

Sige Hbt ◽

Radiation Induced ◽

The Impact

We present an overview of radiation effects in silicon-germanium heterojunction bipolar transistors ( SiGe HBT). We begin by reviewing SiGe HBTs, and then examine the impact of ionizing radiation on both the dc and ac performance of SiGe HBTs, the circuit-level impact of radiation-induced changes in the transistors, followed by single-event phenomena in SiGe HBT circuits. While ionizing radiation degrades both the dc and ac properties of SiGe HBTs, this degradation is remarkably minor, and is far better than that observed in even radiation-hardened conventional Si BJT technologies. This fact is particularly significant given that no intentional radiation hardening is needed to ensure this level of both device-level and circuit-level tolerance (typically multi-Mrad TID). SEU effects are pronounced in SiGe HBT circuits, as expected, but circuit-level mitigation schemes will likely be suitable to ensure adequate tolerance for many orbital missions. SiGe HBT technology thus offers many interesting possibilities for space-borne electronic systems.

Download Full-text

Formation of defects in implanted hipox-structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131668 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1406-1407

Author(s):

Peter Pegler ◽

N. David Theodore ◽

Ming Pan

Keyword(s):

High Pressure ◽

Cross Section ◽

Semiconductor Devices ◽

Silicon Substrates ◽

Processing Conditions ◽

Pressure Oxidation ◽

Deep Trench ◽

Local Oxidation ◽

Trench Isolation ◽

And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Download Full-text