Effect of microstructural and interface modifications on electrical properties of molybdenum silicide thin films formed by rapid thermal annealing

1997 ◽  
Vol 12 (4) ◽  
pp. 419-426 ◽  
Author(s):  
G Srinivas ◽  
V D Vankar
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molybdenum Silicide

Influence of Rapid Thermal Annealing on Structural, Optical and Electrical Properties of ITO Thin Films

2016 ◽  
Vol 675-676 ◽  
pp. 249-252
Author(s):  
Wissawat Sakulsaknimitr ◽  
Worasitti Sriboon ◽  
Kanyakorn Teanchai ◽  
Mati Horprathum ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hall Effect Measurement ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Thin Films

Indium doped tin oxide (ITO) thin films were deposited on silicon wafer (100) and glass slide by ion assisted electron beam evaporation deposition. After deposition, the ITO thin films were annealed in vacuum (100-300°C) and their structural, optical and electrical properties were systematically investigated. X-ray diffraction,atomic force microscopy, ultraviolet–visible (UV–vis) spectrophotometer and hall-effect measurement were employed to obtain information on the crystallization, transmission and resistivity the films.It was found that the rapid thermal annealing can improve the resistivity of ITO thin films which specializes for the transparent conductive layers.

Improvement of Ferroelectric and Electrical Properties of Sol-Gel deposited Bi4Ti3Oi2 Thin Films by Multiple Rapid Thermal Annealing Techniques

2004 ◽  
Vol 830 ◽  
Author(s):  
Hua. Wang ◽  
Minfang Ren
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Annealing Temperature Increase ◽  
Si Substrates ◽  
Surface Increase

AbstractFerroelectric Bi4Ti3O12 thin films were fabricated by sol-gel method with multiple rapid thermal annealing (MRTA) techniques on Pt/Ti/SiO2/p-Si substrates. The effect of annealing temperature on crystallinity, ferroelectric and electrical properties of Bi4Ti3O12 films derived by MRTA and by normal RTA were investigated. The results reveal that the grain size and the roughness of surface increase with the annealing temperature increase, but the maximal remnant polarization of Bi4Ti3O12

The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films

1997 ◽  
Vol 300 (1-2) ◽  
pp. 272-277 ◽  
Author(s):  
B. Todorović ◽  
T. Jokić ◽  
Z. Rakočević ◽  
Z. Marković ◽  
B. Gaković ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Structural And Electrical Properties
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