scholarly journals Unravelling the phonon scattering mechanism in Half-Heusler alloys ZrCo1-xIrxSb (x = 0, 0.1, and 0.25)

2021 ◽  
Author(s):  
Kavita Yadav ◽  
Saurabh Singh ◽  
Omprakash Muthusamy ◽  
Tsunehiro Takeuchi ◽  
Kaustav Mukherjee
Keyword(s):  
Phonon Scattering ◽  
Heusler Alloys ◽  
Scattering Mechanism

Polar Optical Phonon Instability and Intervalley Transfer in Gallium Nitride

1998 ◽  
Vol 512 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'leary ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
B. L. Gelmont ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Analytical Model ◽  
Optical Phonon ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Polar Optical Phonon ◽  
Scattering Mechanism ◽  
Loss Mechanism ◽  
One Dimensional ◽  
Optical Phonon Scattering

ABSTRACTWe develop a simple, one-dimensional, analytical model, which describes electron transport in gallium nitride. We focus on the polar optical phonon scattering mechanism, as this is the dominant energy loss mechanism at room temperature. Equating the power gained from the field with that lost through scattering, we demonstrate that beyond a critical electric field, 114 kV/cm at T = 300 K, the power gained from the field exceeds that lost due to polar optical phonon scattering. This polar optical phonon instability leads to a dramatic increase in the electron energy, this being responsible for the onset of intervalley transitions. The predictions of our analytical model are compared with those of Monte Carlo simulations, and are found to be in satisfactory agreement.

The phonon scattering mechanism and its effect on temperature dependent thermal and thermoelectric properties of the silver nanowire

2022 ◽  
Author(s):  
Gui-Cang He ◽  
Lina Shi ◽  
Yilei Hua ◽  
Xiao-Li Zhu
Keyword(s):  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Silver Nanowire ◽  
Scattering Mechanism ◽  
Temperature Dependent ◽  
Scattering Mechanisms ◽  
Phonon Structure

In this work, the electron-phonon, the phonon-phonon, and phonon structure scattering mechanisms and the effect on the thermal and thermoelectric properties of the silver nanowire (AgNW) are investigated in temperature...

Synthesis and thermoelectric properties of tantalum-doped ZrNiSn half-Heusler alloys

2014 ◽  
Vol 07 (03) ◽  
pp. 1450032 ◽  
Author(s):  
Degang Zhao ◽  
Min Zuo ◽  
Zhenqing Wang ◽  
Xinying Teng ◽  
Haoran Geng
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Acoustic Phonon ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Heusler Alloys ◽  
Hot Press ◽  
Arc Melting ◽  
Hot Press Sintering

The Ta -doped ZrNiSn half-Heusler alloys, Zr 1-x Ta x NiSn , were synthesized by arc melting and hot-press sintering. Microstructure of Zr 1-x Ta x NiSn compounds were analyzed and the thermoelectric (TE) properties of Zr 1-x Ta x NiSn compounds were measured from room temperature to 823 K. The electrical conductivity increased with increasing Ta content. The Seebeck coefficient of Zr 1-x Ta x NiSn compounds was sharply decreased with increasing Ta content. The Hall mobility was proportional to T-1.5 above 673 K, indicating that the acoustic phonon scattering was predominant in the temperature range. The thermal conductivity was effectively depressed by introducing Ta substitution. The figure of merit of ZrNiSn compounds was improved due to the decreased thermal conductivity and increased electrical conductivity. The maximum ZT value of 0.60 was achieved for Zr 0.97 Ta 0.03 NiSn sample at 823 K.

scholarly journals Tunable layered-magnetism–assisted magneto-Raman effect in a two-dimensional magnet CrI3

2020 ◽  
Vol 117 (40) ◽  
pp. 24664-24669
Author(s):  
Wencan Jin ◽  
Zhipeng Ye ◽  
Xiangpeng Luo ◽  
Bowen Yang ◽  
Gaihua Ye ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Raman Effect ◽  
Higher Order ◽  
Magnetic Phase Transitions ◽  
Two Dimensional ◽  
Phonon Coupling ◽  
Scattering Mechanism ◽  
First Order ◽  
Critical Magnetic Fields ◽  
The Rich

We used a combination of polarized Raman spectroscopy experiment and model magnetism–phonon coupling calculations to study the rich magneto-Raman effect in the two-dimensional (2D) magnet CrI3. We reveal a layered-magnetism–assisted phonon scattering mechanism below the magnetic onset temperature, whose Raman excitation breaks time-reversal symmetry, has an antisymmetric Raman tensor, and follows the magnetic phase transitions across critical magnetic fields, on top of the presence of the conventional phonon scattering with symmetric Raman tensors in N-layer CrI3. We resolve in data and by calculations that the first-order Ag phonon of the monolayer splits into an N-fold multiplet in N-layer CrI3 due to the interlayer coupling (N≥2) and that the phonons within the multiplet show distinct magnetic field dependence because of their different layered-magnetism–phonon coupling. We further find that such a layered-magnetism–phonon coupled Raman scattering mechanism extends beyond first-order to higher-order multiphonon scattering processes. Our results on the magneto-Raman effect of the first-order phonons in the multiplet and the higher-order multiphonons in N-layer CrI3 demonstrate the rich and strong behavior of emergent magneto-optical effects in 2D magnets and underline the unique opportunities of spin–phonon physics in van der Waals layered magnets.

EFFECT OF EMBEDDING NANOPARTICLES ON THERMAL CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS: PHONON SCATTERING MECHANISM

2009 ◽  
Vol 08 (06) ◽  
pp. 551-556 ◽  
Author(s):  
K. K. CHOUDHARY ◽  
D. PRASAD ◽  
K. JAYAKUMAR ◽  
DINESH VARSHNEY
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Lattice Thermal Conductivity ◽  
Present Model ◽  
Phonon Scattering ◽  
Scattering Mechanism ◽  
Temperature Dependent ◽  
Pure Crystal ◽  
Model Hamiltonian ◽  
Heat Carriers

We evolve a theoretical model for quantitative analysis of decrease in thermal conductivity (κ) by embedding ErAs nanoparticles in In0.53Ga0.47As crystalline semiconductors. The lattice thermal conductivity by incorporating the scattering of phonons with defects, grain boundaries, electrons, and phonons in the model Hamiltonian are evaluated. It is noticed that the ErAs nanoparticles provide an additional scattering mechanism for phonons. The embedding of ErAs nanoparticles in In0.53Ga0.47As crystalline semiconductors, the phonon scattering with point defects and grain boundaries become more efficient, which cause in the decrease of thermal conductivity up to half of its value of pure crystal. Conclusively, the temperature dependent of thermal conductivity is determined by competition among the several operating scattering mechanisms for the heat carriers. Numerical analysis of thermal conductivity from the present model shows similar results as those revealed from experiments.

The study of negative THz conductivity of graphene under the phonon scattering mechanism

2012 ◽  
Vol 285 (24) ◽  
pp. 5410-5415 ◽  
Author(s):  
Weipeng Wang ◽  
Degang Xu ◽  
Yuye Wang ◽  
Changming Liu ◽  
Zhuo Zhang ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Scattering Mechanism

THERMAL TRANSPORT OF MgB2 SUPERCONDUCTORS: INTERPLAY BETWEEN ELECTRON AND LATTICE-IMPURITY SCATTERING

2007 ◽  
Vol 21 (26) ◽  
pp. 4517-4536 ◽  
Author(s):  
DINESH VARSHNEY ◽  
M. NAGAR ◽  
K. K. CHOUDHARY
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Phonon Scattering ◽  
Theoretical Calculations ◽  
Impurity Scattering ◽  
Metallic Phase ◽  
Scattering Mechanism ◽  
S Wave ◽  
Lattice Contribution ◽  
Relaxation Time Approximation

We use the Kubo model to calculate the lattice contribution to the thermal conductivity (κph) in MgB 2 superconductors. The theory is formulated when heat transfer is limited by the scattering of phonons from defects, grain boundaries, charge carriers, and phonons. The lattice thermal conductivity in normal state of MgB 2 superconductors dominates and is an artifact of strong phonon-impurity and -phonon scattering mechanism. Later on, the electronic contribution to the thermal conductivity (κe) is calculated within relaxation time approximation for π and σ band carriers with s wave symmetry. Such an estimate sets an upper bound on κe and is about 30% of the total heat transfer at room temperature. The validity of the Wiedemann Franz law is also examined and an enhanced Lorenz number is obtained. Both these channels for heat transfer are clubbed and κ tot develops a broad peak at about 120 K, before falling off at higher temperatures weakly. The anomalies reported are well-accounted in terms of the scattering mechanism by phonon and electron with impurities. It is shown that the behavior of the thermal conductivity is determined by competition among the several operating scattering mechanisms for the heat carriers and a balance between electron and lattice contributions. The contribution of carriers toward κ is substantial and is due to the fact that the carriers are condensed and do not carry entropy. We include comparisons with other theoretical calculations on κe and available experimental data. The numerical analysis of heat transfer in the metallic phase of MgB 2 shows similar results as those revealed from experiments.

scholarly journals Phonon scattering mechanism in thermoelectric materials revised via resonant x-ray dynamical diffraction

2020 ◽  
Vol 10 (2) ◽  
pp. 265-271
Author(s):  
Adriana Valério ◽  
Rafaela F.S. Penacchio ◽  
Maurício B. Estradiote ◽  
Marli R. Cantarino ◽  
Fernando A. Garcia ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Phonon Scattering ◽  
Scattering Mechanism ◽  
Dynamical Diffraction ◽  
X Ray ◽  
Image Position

scholarly journals Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials

2017 ◽  
Vol 114 (40) ◽  
pp. 10548-10553 ◽  
Author(s):  
Jun Mao ◽  
Jing Shuai ◽  
Shaowei Song ◽  
Yixuan Wu ◽  
Rebecca Dally ◽  
...  
Keyword(s):  
Power Factor ◽  
Carrier Mobility ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Substantial Improvement ◽  
Thermoelectric Performance ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Ionized Impurity Scattering ◽  
Higher Carrier Mobility

Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm2⋅V−1⋅s−1 is obtained, thus leading to a notably enhanced power factor of ∼13 μW⋅cm−1⋅K−2 from ∼5 μW⋅cm−1⋅K−2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems.

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