The phonon scattering mechanism and its effect on temperature dependent thermal and thermoelectric properties of the silver nanowire

2022 ◽  
Author(s):  
Gui-Cang He ◽  
Lina Shi ◽  
Yilei Hua ◽  
Xiao-Li Zhu
Keyword(s):  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Silver Nanowire ◽  
Scattering Mechanism ◽  
Temperature Dependent ◽  
Scattering Mechanisms ◽  
Phonon Structure

In this work, the electron-phonon, the phonon-phonon, and phonon structure scattering mechanisms and the effect on the thermal and thermoelectric properties of the silver nanowire (AgNW) are investigated in temperature...

EFFECT OF EMBEDDING NANOPARTICLES ON THERMAL CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS: PHONON SCATTERING MECHANISM

2009 ◽  
Vol 08 (06) ◽  
pp. 551-556 ◽  
Author(s):  
K. K. CHOUDHARY ◽  
D. PRASAD ◽  
K. JAYAKUMAR ◽  
DINESH VARSHNEY
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Lattice Thermal Conductivity ◽  
Present Model ◽  
Phonon Scattering ◽  
Scattering Mechanism ◽  
Temperature Dependent ◽  
Pure Crystal ◽  
Model Hamiltonian ◽  
Heat Carriers

We evolve a theoretical model for quantitative analysis of decrease in thermal conductivity (κ) by embedding ErAs nanoparticles in In0.53Ga0.47As crystalline semiconductors. The lattice thermal conductivity by incorporating the scattering of phonons with defects, grain boundaries, electrons, and phonons in the model Hamiltonian are evaluated. It is noticed that the ErAs nanoparticles provide an additional scattering mechanism for phonons. The embedding of ErAs nanoparticles in In0.53Ga0.47As crystalline semiconductors, the phonon scattering with point defects and grain boundaries become more efficient, which cause in the decrease of thermal conductivity up to half of its value of pure crystal. Conclusively, the temperature dependent of thermal conductivity is determined by competition among the several operating scattering mechanisms for the heat carriers. Numerical analysis of thermal conductivity from the present model shows similar results as those revealed from experiments.

THERMOELECTRICITY OF Ca2.9Ce0.1Co4O9+δ BASED NANOCOMPOSITES WITH Cu2O NANOINCLUSION

2013 ◽  
Vol 27 (22) ◽  
pp. 1350108
Author(s):  
FANG JU LI
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Energy Harvesting ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Phonon Scattering ◽  
Temperature Dependent ◽  
Resistivity Measurements ◽  
Carrier Scattering ◽  
Scattering Centers

Ca 2.9 Ce 0.1 Co 4 O 9+δ/x wt% Cu 2 O nanocomposites have been studied as the thermoelectric materials for energy harvesting purpose. We evaluate the thermoelectric properties of the composites through temperature dependent thermopower, thermal conductivity and resistivity measurements. It is found that the introduction of Cu 2 O nanoparticles serves as phonon scattering centers, which reduces the thermal conductivity. The nanoinclusions contribute to a remarkable increase in electrical resistivity due to enhanced carrier scattering. As a result, Cu 2 O nanoinclusions do not succeed in improving ZT of Ca 2.9 Ce 0.1 Co 4 O 9+δ material.

scholarly journals Analysis of the Effect of Resonant Phonon Scattering on the Thermal Conductivity of CaF2

1976 ◽  
Vol 29 (2) ◽  
pp. 19 ◽  
Author(s):  
PRW Hudson ◽  
EE Gibbs
Keyword(s):  
Thermal Conductivity ◽  
Low Temperatures ◽  
Phonon Scattering ◽  
Low Frequency ◽  
Resonant Scattering ◽  
Boundary Scattering ◽  
Scattering Mechanism ◽  
Scattering Mechanisms ◽  
Phonon Conduction

An analysis is presented of the various phonon contributions to the thermal conductivity of CaF2 doped with 1�0% and 0�1 % of yttrium or thulium. The broad phonon resonant scattering term is found to reduce the low frequency phonon conduction significantly. This is responsible for the relatively stronger suppression of the conductivity at low temperatures in the phonon boundary scattering region. Thus broad quasilocalized phonon resonant scattering mechanisms have a similar effect to phonon precipitate scattering. It also follows that, in the case of a broad resonant scattering mechanism, a dip will not necessarily be seen in the conductivity.

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

Polar Optical Phonon Instability and Intervalley Transfer in Gallium Nitride

1998 ◽  
Vol 512 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'leary ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
B. L. Gelmont ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Analytical Model ◽  
Optical Phonon ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Polar Optical Phonon ◽  
Scattering Mechanism ◽  
Loss Mechanism ◽  
One Dimensional ◽  
Optical Phonon Scattering

ABSTRACTWe develop a simple, one-dimensional, analytical model, which describes electron transport in gallium nitride. We focus on the polar optical phonon scattering mechanism, as this is the dominant energy loss mechanism at room temperature. Equating the power gained from the field with that lost through scattering, we demonstrate that beyond a critical electric field, 114 kV/cm at T = 300 K, the power gained from the field exceeds that lost due to polar optical phonon scattering. This polar optical phonon instability leads to a dramatic increase in the electron energy, this being responsible for the onset of intervalley transitions. The predictions of our analytical model are compared with those of Monte Carlo simulations, and are found to be in satisfactory agreement.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

scholarly journals Effect of ZnO and SnO2 Nanolayers at Grain Boundaries on Thermoelectric Properties of Polycrystalline Skutterudites

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2270
Author(s):  
Sang-il Kim ◽  
Jiwoo An ◽  
Woo-Jae Lee ◽  
Se Kwon ◽  
Woo Nam ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Atomic Layer Deposition ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Atomic Layer ◽  
Deposition Method ◽  
Plasma Sintering ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

Nanostructuring is considered one of the key approaches to achieve highly efficient thermoelectric alloys by reducing thermal conductivity. In this study, we investigated the effect of oxide (ZnO and SnO2) nanolayers at the grain boundaries of polycrystalline In0.2Yb0.1Co4Sb12 skutterudites on their electrical and thermal transport properties. Skutterudite powders with oxide nanolayers were prepared by atomic layer deposition method, and the number of deposition cycles was varied to control the coating thickness. The coated powders were consolidated by spark plasma sintering. With increasing number of deposition cycle, the electrical conductivity gradually decreased, while the Seebeck coefficient changed insignificantly; this indicates that the carrier mobility decreased due to the oxide nanolayers. In contrast, the lattice thermal conductivity increased with an increase in the number of deposition cycles, demonstrating the reduction in phonon scattering by grain boundaries owing to the oxide nanolayers. Thus, we could easily control the thermoelectric properties of skutterudite materials through adjusting the oxide nanolayer by atomic layer deposition method.

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