scholarly journals Fast magnetization reversal of a magnetic nanoparticle induced by cosine chirp microwave field pulse

2021 ◽  
Author(s):  
Md. Torikul Islam ◽  
Md. Abdus Sami Akanda ◽  
Md. Abu Jafar Pikul ◽  
Xiansi Wang
Keyword(s):  
Magnetization Reversal ◽  
Magnetic Nanoparticle ◽  
Microwave Pulse ◽  
Microwave Field ◽  
Low Cost ◽  
Memory Device ◽  
Frequency Change ◽  
Initial Frequency ◽  
Plane Shape ◽  
Magnetization Precession

Abstract We investigate the magnetization reversal of single-domain magnetic nanoparticle driven by the circularly polarized cosine chirp microwave pulse (CCMP). The numerical findings, based on the Landau-Lifshitz-Gilbert equation, reveal that the CCMP is by itself capable of driving fast and energy-efficient magnetization reversal. The microwave field amplitude and initial frequency required by a CCMP are much smaller than that of the linear down-chirp microwave pulse. This is achieved as the frequency change of the CCMP closely matches the frequency change of the magnetization precession which leads to an efficient stimulated microwave energy absorption (emission) by (from) the magnetic particle before (after) it crosses over the energy barrier. We further find that the enhancement of easy-plane shape anisotropy significantly reduces the required microwave amplitude and the initial frequency of CCMP. We also find that there is an optimal Gilbert damping for fast magnetization reversal. These findings may provide a pathway to realize the fast and low-cost memory device.

scholarly journals Magnetization Reversal in Exchange Spring Bilayer System Under Circularly Polarized Microwave Field

2014 ◽  
Vol 50 (11) ◽  
pp. 1-4
Author(s):  
Renuka Tayade ◽  
Alexandre Pasko ◽  
Claudio Serpico ◽  
Frederic Mazaleyrat ◽  
Martino LoBue
Keyword(s):  
Magnetization Reversal ◽  
Microwave Field ◽  
Circularly Polarized ◽  
Bilayer System ◽  
Exchange Spring

Stable resistive switching characteristics of ZrO 2 -based memory device with low-cost

2017 ◽  
Vol 172 ◽  
pp. 26-29 ◽  
Author(s):  
Liping Fu ◽  
Yingtao Li ◽  
Genliang Han ◽  
Xiaoping Gao ◽  
Chuanbing Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Cost ◽  
Memory Device ◽  
Switching Characteristics

scholarly journals Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Peng Hai-yun ◽  
Zhou Wen-gang
Keyword(s):  
Ion Mobility ◽  
Nonvolatile Memory ◽  
Low Cost ◽  
Random Access ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Mobility Model ◽  
Storage Device ◽  
New Device ◽  
Switching Matrix

There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high storage density, low power, low cost, very small cell, being nonvolatile, and unlimited writing endurance. The device has extreme short erasing time and the stored charge cannot be destroyed after power-off. Therefore, the ReRAM device is a significant storage device for many applications in the next generation. In this paper, we first explored the mechanism of the ReRAM device based on ion mobility model and then applied this device to optimize the design of FPGA switching matrix. The results show that it is beneficial to enhance the FPGA performance to replace traditional SRAM cells with ReRAM cells for the switching matrix.

scholarly journals A Novel Design of a 3D Racetrack Memory Based on Functional Segments in Cylindrical Nanowire Arrays

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2403
Author(s):  
Javier Rial ◽  
Mariana P. Proenca
Keyword(s):  
Low Cost ◽  
Memory Device ◽  
Nanowire Arrays ◽  
High Yield ◽  
Magnetic Domains ◽  
Micromagnetic Simulations ◽  
Current Pulses ◽  
Spin Polarized ◽  
Innovative Idea ◽  
Vertically Aligned

A racetrack memory is a device where the information is stored as magnetic domains (bits) along a nanowire (track). To read and record the information, the bits are moved along the track by current pulses until they reach the reading/writing heads. In particular, 3D racetrack memory devices use arrays of vertically aligned wires (tracks), thus enhancing storage density. In this work, we propose a novel 3D racetrack memory configuration based on functional segments inside cylindrical nanowire arrays. The innovative idea is the integration of the writing element inside the racetrack itself, avoiding the need to implement external writing heads next to the track. The use of selective magnetic segments inside one nanowire allows the creation of writing and storage sections inside the same track, separated by chemical constraints identical to those separating the bits. Using micromagnetic simulations, our study reveals that if the writing section is composed of two segments with different coercivities, one can reverse its magnetization independently from the rest of the memory device by applying an external magnetic field. Spin-polarized current pulses then move the information bits along selected tracks, completing the writing process by pushing the new bit into the storage section of the wire. Finally, we have proven the efficacy of this system inside an array of 7 nanowires, opening the possibility to use this configuration in a 3D racetrack memory device composed of an array of thousands of nanowires produced by low-cost and high-yield template-electrodeposition methods.

Organic Field Effect Transistor using BaTiO3-Mn Doped and P(VDF-TrFE) for Non Volatile Memory Application

2008 ◽  
Vol 1071 ◽  
Author(s):  
Sambit Pattnaik ◽  
Ashish Garg ◽  
Monica Katiyar
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Vinylidene Fluoride ◽  
Low Cost ◽  
Phase Evolution ◽  
Memory Device ◽  
Organic Field Effect Transistor ◽  
Non Volatile Memory ◽  
Contact Devices ◽  
Effect Transistor

AbstractHere, we report fabrication of an organic field effect transistor that can be used as a memory device. We have evaluated inorganic ferroelectric insulator manganese doped barium titanate(BTO), organic poly(vinylidene fluoride trifluoroethylene) P(VDF-TrFE), and their composite. The inorganic and organic ferroelectrics were fabricated using low cost process of spin coating followed by annealing to enhance crystallinity. The ferroelectric phase evolution is assessed by X-ray diffraction, MIM structure is used to study polarization behaviour and leakage current. Finally, OFETs are fabricated using thermal evaporation of 75 nm of pentacene. Gold electrodes of 70 nm were evaporated for the top contact devices keeping W/L=40. The OFET devices, for BTO/P(VDF-TrFE) composite insulator, showed memory effect with shift in threshold voltage of 8.5 ± 1.5V.

A novel, nanocrystal (nc) based non-volatile memory device

2000 ◽  
Vol 638 ◽  
Author(s):  
Jan W. De Blauwe ◽  
Marty L. Green ◽  
Tom W. Sorsch ◽  
Garry R. Weber ◽  
Jeff D. Bude ◽  
...  
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Memory Device ◽  
Fabrication Process ◽  
Floating Gate ◽  
Potential Candidate ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractThis paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

scholarly journals Low-Cost QCM Sensor System for Screening Semen Samples

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Michael I. Newton ◽  
Shaun Atherton ◽  
Robert H. Morris ◽  
Simon M. Stanley ◽  
Carl R. Evans ◽  
...  
Keyword(s):  
Low Cost ◽  
Semen Sample ◽  
Sensor System ◽  
Frequency Change ◽  
Agricultural Practice ◽  
Similar Data ◽  
Frequency Counter ◽  
Measurement Cell ◽  
Frequency Changes ◽  
Sample Measurement

Artificial insemination is a well-established part of modern agricultural practice. A viable semen sample is judged by the total number of spermatozoa (sperm) in the sample and the motility of the sperm. In this paper, we report the development of a reusable measurement cell and electronics for screening semen samples based on the Quartz Crystal Microbalance (QCM) and Universal Frequency to Digital Converter (UFDC-1) to produce a low-cost sensor system. After introducing the semen sample at one end of the measurement cell, sperm swim down a channel before causing a frequency change on the QCM. Data is presented that shows the different frequency changes using a commercial frequency counter caused by porcine semen samples, one two days old and one twenty one days old. Similar data is presented for a motile semen sample measurement using the low-cost UFDC-1.

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