scholarly journals Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Peng Hai-yun ◽  
Zhou Wen-gang
Keyword(s):  
Ion Mobility ◽  
Nonvolatile Memory ◽  
Low Cost ◽  
Random Access ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Mobility Model ◽  
Storage Device ◽  
New Device ◽  
Switching Matrix

There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high storage density, low power, low cost, very small cell, being nonvolatile, and unlimited writing endurance. The device has extreme short erasing time and the stored charge cannot be destroyed after power-off. Therefore, the ReRAM device is a significant storage device for many applications in the next generation. In this paper, we first explored the mechanism of the ReRAM device based on ion mobility model and then applied this device to optimize the design of FPGA switching matrix. The results show that it is beneficial to enhance the FPGA performance to replace traditional SRAM cells with ReRAM cells for the switching matrix.

scholarly journals The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Hau Huu Do Ho ◽  
Trung Minh Le ◽  
Ngoc Kim Pham
Keyword(s):  
Graphene Oxide ◽  
Electric Fields ◽  
Nonvolatile Memory ◽  
Conduction Mechanism ◽  
Random Access ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Bipolar Switching ◽  
Metal Insulator Metal

Resistive random access memory (RRAM) is emerging as a new class of nonvolatile memory that offers promising electronic properties and simple metal-insulator-metal (MIM) structures for sandwich layers, such as organics, inorganics, and hybrid materials. Hybrid structures have attracted much interest recently because of their advantageous properties. The combination of chitosan (CS) and graphene oxide (GO) acts as switching layers in the Al/CS-GO/FTO RRAM structure it is studied with bipolar switching behavior at approximately 102 ON/OFF ratios during 100 cycles. This hybrid interaction is identified by shifts in the D, G, and 2D bands using Raman spectroscopy. The conduction mechanism is proposed to be a space-charge-limited conduction (SCLC) mechanism and trap-assisted tunneling conduction mechanism in the ON and OFF states, respectively. The trapped and detrapped electrons move through the trap sites with external electric fields, and this movement is responsible for the switching mechanism of the CS-GO nanocomposite memory device.

scholarly journals Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device

Polymers ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 901 ◽  
Author(s):  
Ju-Young Choi ◽  
Hwan-Chul Yu ◽  
Jeongjun Lee ◽  
Jihyun Jeon ◽  
Jaehyuk Im ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Indium Tin Oxide ◽  
Nonvolatile Memory ◽  
In Situ Polymerization ◽  
Random Access ◽  
Charge Trapping ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Current Ratio ◽  
Functionalized Graphene Oxide

2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterized by infrared (IR) spectroscopy, thermogravimetric analysis (TGA) and UV-visible spectroscopy. The PI-GO film was used as a memory layer in the fabrication of a resistive random access memory (RRAM) device with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes. The device showed write-once-read-many-times (WORM) characteristics with a high ON/OFF current ratio (Ion/Ioff = 3.41 × 108). This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle. These results suggest that PI-GO is an attractive candidate for applications in next generation nonvolatile memory.

scholarly journals Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept

RSC Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 4327-4338
Author(s):  
Naila Arshad ◽  
Muhammad Sultan Irshad ◽  
Misbah Sehar Abbasi ◽  
Saif Ur Rehman ◽  
Iftikhar Ahmed ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Low Cost ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Proof Of Concept ◽  
Access Memory ◽  
Electrical Switching

Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for resistive random-access memory (RRAM).

scholarly journals Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 359
Author(s):  
Harshada Patil ◽  
Honggyun Kim ◽  
Shania Rehman ◽  
Kalyani D. Kadam ◽  
Jamal Aziz ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Bulk Heterojunction ◽  
Low Cost ◽  
Random Access ◽  
Protective Layer ◽  
Memory Device ◽  
Environmental Stability ◽  
Bipolar Resistive Switching

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.

Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device

2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
Mousam Charan Sahu ◽  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
...  
Keyword(s):  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Anatase Tio2 ◽  
Access Memory ◽  
Conducting Filament ◽  
Valence Change

Electrical study of radiation hard designed HfO2-based 1T-1R RRAM devices

MRS Advances ◽  
2016 ◽  
Vol 2 (4) ◽  
pp. 223-228 ◽  
Author(s):  
Eduardo Pérez ◽  
Florian Teply ◽  
Christian Wenger
Keyword(s):  
Point Contact ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Electrical Performance ◽  
Programming Approach ◽  
Resistive State ◽  
New Device ◽  
Voltage Sweep ◽  
Radiation Hard ◽  
Incremental Step

ABSTRACTIn this work the electrical performance of a radiation hard designed 1T-1R resistive random access memory (RRAM) device is investigated in DC (voltage sweep) and AC (pulsed voltage) modes. This new device is based on the combination of an Enclosed Layout Transistor (ELT) used as selector device and a TiN/ HfO2/ Ti/TiN RRAM stack used as resistive device. The high cell to cell variability in the DC mode makes it difficult to define an electrical gap between the High Resistive State (HRS) and the Low Resistive State (LRS). The strong reduction of the variability by the use of Incremental Step Pulse with Verify Algorithm (ISPVA) makes the later a mandatory programming approach. The Quantum Point Contact (QPC) model defines an energy barrier located in the rupture point of the filament in HRS. The compensation between the width and height variations of this barrier during cycling could explain the stability of HRS and LRS. The good performance of the proposed device using the ISPVA programming approach makes it a good candidate for Rad-Hard Non Volatile Memories integration.

Sign in / Sign up

Export Citation Format

Share Document