First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

Abstract Nano-membrane tri-gate β-gallium oxide (β-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between β-Ga2O3 and gate dielectric, atomic layer-deposited 15-nm-thick aluminum oxide (Al2O3) was utilized with Tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV/dec, high drain current (I DS) ON/OFF ratio of 1.5 × 109, and negligible transfer characteristic hysteresis. We also experimentally demonstrated robustness of these devices with current–voltage (I–V) characteristics measured at temperatures up to 400 °C.

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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2018.05.191 ◽

2018 ◽

Vol 461 ◽

pp. 255-259 ◽

Cited By ~ 3

Author(s):

R. Stoklas ◽

D. Gregušová ◽

S. Hasenöhrl ◽

E. Brytavskyi ◽

M. Ťapajna ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Layer Deposition ◽

Heterostructure Field Effect Transistors

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ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽

10.1142/s1793292010002062 ◽

2010 ◽

Vol 05 (03) ◽

pp. 161-165 ◽

Cited By ~ 5

Author(s):

A. BENFDILA ◽

S. ABBAS ◽

R. IZQUIERDO ◽

R. TALMAT ◽

A. VASEASHTA

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electronic Devices ◽

Ballistic Transport ◽

Drain Current ◽

Functional Behavior ◽

Current Saturation ◽

Current Voltage ◽

Saturation Region ◽

Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

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High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

New Journal of Physics ◽

10.1088/1367-2630/10/10/103019 ◽

2008 ◽

Vol 10 (10) ◽

pp. 103019 ◽

Cited By ~ 17

Author(s):

Marcus Rinkiö ◽

Andreas Johansson ◽

Marina Y Zavodchikova ◽

J Jussi Toppari ◽

Albert G Nasibulin ◽

...

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

High Yield

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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2937117 ◽

2008 ◽

Vol 92 (23) ◽

pp. 233508 ◽

Cited By ~ 21

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Manhong Zhang ◽

Hyoung-Sub Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Al2o3 Gate Dielectric

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EFFECT OF GATE INSULATOR ON THE PERFORMANCE OF COPPER PHTHALOCYANINE-BASED ORGANIC THIN FILM TRANSISTORS

International Journal of Nanoscience ◽

10.1142/s0219581x1100912x ◽

2011 ◽

Vol 10 (04n05) ◽

pp. 745-748

Author(s):

N. PADMA ◽

SHASWATI SEN ◽

A. K. CHAUHAN ◽

D. K. ASWAL ◽

S. K. GUPTA ◽

...

Keyword(s):

Dielectric Constant ◽

Field Effect ◽

Gate Dielectric ◽

Copper Phthalocyanine ◽

Field Effect Transistors ◽

Drain Current ◽

Dielectric Constants ◽

Gate Insulator ◽

Operating Voltage ◽

Organic Thin Film

Effect of the gate dielectric on the performance of Copper phthalocyanine (CuPc) based top contact organic field effect transistors (OFET) has been studied using thermally grown SiO2 and sputtered HfO x films with dielectric constants of 3.9 and 12.5 respectively. Operating voltages of the devices on SiO2 and HfO x were found to be 10–50 V and 2–3 V, respectively. The lower operating voltage for HfO x is attributed to the higher dielectric constant. Devices on SiO2 and HfO x were found to have field effect mobilities of 0.01 and 3.5 × 10-3 cm2/Vs and drain current modulation of 103 and 102, respectively. Scanning Electron Microscopy showed widely scattered nanowires on HfO x and densely packed nanofibers on SiO2 . X-ray diffraction studies showed better crystallinity of films on SiO2 . The results show that operating voltage of devices can be reduced by using higher dielectric constant material while mobility and FET characteristics depend on structure of CuPc that in turn is influenced by the dielectric.

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Nanowire Tunnel Field Effect Transistors at High Temperature

Journal of Integrated Circuits and Systems ◽

10.29292/jics.v8i2.381 ◽

2013 ◽

Vol 8 (2) ◽

pp. 110-115

Author(s):

Márcio D. V. Martino ◽

Felipe S. Neves ◽

Paula Ghedini Der Agopian ◽

João Antonio Martino ◽

Rita Rooyackers ◽

...

Keyword(s):

Field Effect ◽

Room Temperature ◽

Field Effect Transistors ◽

Drain Current ◽

Transport Mechanisms ◽

Temperature Influence ◽

Subthreshold Slope ◽

Band To Band Tunneling ◽

Trap Assisted Tunneling ◽

Working Principle

The aim of this work is to study how the performance of nanowire tunnel field effect transistors (TFETs) is influenced by temperature variation. First of all, simulated energy band diagrams were presented to justify its fundamental working principle and this analysis was compared to experimental data obtained for temperature ranging from 300 to 420 K. This methodology was performed for different nanowire diameters and bias conditions, leading to a deep investigation of parameters such as the ratio of on-state and off-state current (ION/IOFF) and the subthreshold slope (S). Three different transport mechanisms (band-to-band tunneling, Shockley-Read-Hall generation/recombination and trap-assisted tunneling) were highlighted to explain the temperature influence on the drain current. As the final step, subthreshold slope values for each configuration were compared to the room temperature. Therefore, it was observed that larger nanowire diameters and lower temperatures tended to increase ION/IOFF ratio. Meanwhile, it was clear that band-to-band tunneling prevailed for higher gate voltage bias, resulting in a much slighter temperature effect on the drain current.

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Electronic Detection and Quantification of ions in solution using an a-Si:H Field-effect Device

MRS Proceedings ◽

10.1557/proc-1153-a19-06 ◽

2009 ◽

Vol 1153 ◽

Cited By ~ 1

Author(s):

João Costa ◽

Miguel Fernandes ◽

Manuela Vieira ◽

G. Lavareda ◽

C. N. Carvalho ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Reference Electrode ◽

Industrial Effluents ◽

Label Free ◽

Detection Techniques ◽

Glass Substrates ◽

Current Voltage ◽

Semiconductor Transducer

AbstractProgress in microelectronics and semiconductor technology has enable new capabilities in the field of sensor construction, particularly of pH sensors based on field-effect transistors (FETs) as transducers of chemical signal. While crystalline devices present a higher sensitivity, their amorphous counterpart present a much lower fabrication cost, thus enabling the production of cheap disposable sensors for use in the food industry. Interest in biosensors consisting of a semiconductor transducer and a functionalized surface with biomolecule receptors (BioFET) continues to grow as they hold the promise for highly selective, label-free, real-time sensing as an alternative to conventional optical detection techniques. We have been involved in the development of a biosensor where the enzymatic activity of recombinant amidase from Escherichia coli is coupled to a semiconductor transducer for the detection of toxic amides in food and industrial effluents. The devices were fabricated on glass substrates by the PECVD technique in the top gate configuration, where the metallic gate is replaced by an electrolytic solution with an immersed Ag/AgCl reference electrode. Silicon nitride is used as gate dielectric enhancing the sensitivity and passivation layer used to avoid leakage and electrochemical reactions. In this article we report on the semiconductor unit, showing that the sensor displays the desired current-voltage characteristics. In addition we present an electrical model of the device, in agreement with the experimental data, that is sensitive to the pH of the solution.

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Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride

Nanophotonics ◽

10.1515/nanoph-2020-0075 ◽

2020 ◽

Vol 9 (7) ◽

pp. 2053-2062

Author(s):

Wenjun Liu ◽

Hemei Zheng ◽

Kahwee Ang ◽

Hao Zhang ◽

Huan Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Atomic Layer ◽

Black Phosphorus ◽

Electrical Performance ◽

Frequency Noise ◽

Si Substrate ◽

Aln Film ◽

Stable Performance

AbstractBlack phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect transistor (FET) fabricated on the atomic layer deposited AlN/SiO2/Si substrate is demonstrated. Electrical measurement results show that BP FETs on the AlN substrate possess superior electrical performance compared with those fabricated on the conventional SiO2/Si substrate. It exhibits a large on-off current ratio of 5 × 108, a low subthreshold swing of <0.26 V/dec, and a high normalized field-effect carrier mobility of 1071 cm2 V−1 s−1 in the temperature range from 77 to 400 K. However, these stable electrical performances are not found in the BP FETs on SiO2/Si substrate when the temperature increases up to 400 K; instead, the electrical performance of BP FETs on the SiO2/Si substrate degrades drastically. Furthermore, to gain a physical understanding on the stable performance of BP FETs on the AlN substrate, low-frequency noise analysis was performed, and it revealed that the AlN film plays a significant role in suppressing the lattice scattering and charge trapping effects at high temperatures.

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