Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...
At present, two-dimensional (2D) materials have shown great application potential in numerous fields based on their physical chemical and electronic properties. Raman spectroscopy and derivative techniques are effective tools for characterizing 2D materials. Raman spectroscopy conveys lots of knowledge on 2D materials, including layer number, doping type, strain and interlayer coupling. This review summarized advanced applications of Raman spectroscopy in 2D materials. The challenges and possible applied directions of Raman spectroscopy to 2D materials are discussed in detail.
Quantum states of quasiparticles in solids are dictated by symmetry. We have experimentally demonstrated quantum states of Dirac electrons in a two-dimensional quasicrystal without translational symmetry. A dodecagonal quasicrystalline order was realized by epitaxial growth of twisted bilayer graphene rotated exactly 30°. We grew the graphene quasicrystal up to a millimeter scale on a silicon carbide surface while maintaining the single rotation angle over an entire sample and successfully isolated the quasicrystal from a substrate, demonstrating its structural and chemical stability under ambient conditions. Multiple Dirac cones replicated with the 12-fold rotational symmetry were observed in angle-resolved photoemission spectra, which revealed anomalous strong interlayer coupling with quasi-periodicity. Our study provides a way to explore physical properties of relativistic fermions with controllable quasicrystalline orders.
Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors.
Interlayer coupling in atomically thin, two-dimensional indium selenide (InSe) may have a significant impact on its properties, including large tunability in the band gap, height of band-edge state, phonon frequency, and high carrier mobility.
Graphene–WS2 heterostructures exhibit strong interlayer coupling with stiffening phonon modes, as well as ambipolar, gate-tunable rectification and enhanced photo-switching behavior.
Interlayer coupling in two-dimensional semiconductor materials