Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

2017 ◽  
Vol 5 (42) ◽  
pp. 11046-11052 ◽  
Author(s):  
Xiaobing Yan ◽  
Lei Zhang ◽  
Yongqiang Yang ◽  
Zhenyu Zhou ◽  
Jianhui Zhao ◽  
...  

Resistive memory (RRAM) based on a solid–electrolyte insulator is a type of critical nanoscale device with promising potential in non-volatile memory, analog circuits and neuromorphic synapse applications.

2017 ◽  
Vol 184 (3) ◽  
pp. 871-878 ◽  
Author(s):  
Siobhan J. Bradley ◽  
Renee Kroon ◽  
Geoffry Laufersky ◽  
Magnus Röding ◽  
Renee V. Goreham ◽  
...  

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