Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
2017 ◽
Vol 5
(42)
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pp. 11046-11052
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Keyword(s):
Resistive memory (RRAM) based on a solid–electrolyte insulator is a type of critical nanoscale device with promising potential in non-volatile memory, analog circuits and neuromorphic synapse applications.
Keyword(s):
2019 ◽
Vol 54
(12)
◽
pp. 9124-9139
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Keyword(s):
2018 ◽
Vol 178
◽
pp. 371-379
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Keyword(s):
2015 ◽
Vol 146
◽
pp. 48-52
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Keyword(s):