Комплексное исследование кластеров радиационных дефектов в GaAs-структурах после нейтронного воздействия
Keyword(s):
The results of experimental studies of the electrical parameters and surface morphology of GaAs structures of ring and circular Schottky diodes before and after irradiation with ~ 1 MeV neutrons are presented. Bulk radiation defects were revealed by atomic force microscopy (AFM). Based on the results of capacitance-voltage measurements, the concentration of electrons was determined and their mobility was estimated before and after irradiation. On the basis of the results obtained using a combination of these methods, a technique is proposed for determining the average sizes of the space charge regions of clusters of radiation defects.
2006 ◽
Vol 1
(2)
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pp. 63-73
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2006 ◽
Vol 15
(4-8)
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pp. 618-621
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2009 ◽
Vol 610-613
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pp. 175-178
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2012 ◽
Vol 331
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pp. 113-125
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2006 ◽
Vol 40
(4-6)
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pp. 343-349
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Keyword(s):
1998 ◽
Vol 69
(4)
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pp. 1753-1756
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