Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

2014 ◽  
Vol 35 (7) ◽  
pp. 073002 ◽  
Author(s):  
Xuliang Zhou ◽  
Jiaoqing Pan ◽  
Renrong Liang ◽  
Jing Wang ◽  
Wei Wang
Keyword(s):  
Thin Film ◽  
Smooth Surface ◽  
Defect Density ◽  
Si Substrate

Conversion of single crystal Si(100) to SiC film by C2H2

1993 ◽  
Vol 8 (3) ◽  
pp. 535-544 ◽  
Author(s):  
Chien C. Chiu ◽  
Seshu B. Desu
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Smooth Surface ◽  
Reaction Times ◽  
Si Substrate ◽  
Etch Pits ◽  
X Ray ◽  
Sic Film ◽  
Sic Films ◽  
Scanning Electron

SiC thin films grown from the reaction between acetylene (C2H2) and the Si(100) substrates in a horizontal hot-wall CVD reactor by different procedures were studied using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The growth of the SiC films was observed from the behavior of Si2p peaks and their plasmons. A SiC thin film with a thickness of 35 Å and having a smooth surface morphology was obtained in C2H2 diluted by H2 at 1050 °C for a period of 60 min. Etch pits and hillocks were observed with increasing reaction time at 1050 °C. For the conversion conducted in C2H2, but in the absence of H2, a SiC monolayer with smooth morphology was obtained at 950 °C for 7 min and defects were observed for longer reaction times at this temperature. Defects were also observed for reaction times as short as 10 s at higher reaction temperatures (e.g., 1000 °C). H2 seems to play a key role in suppressing the formation of defects and the reaction between C2H2 and Si substrate. The formation of defects was correlated to the out-diffusion of Si in the carbonization process.

Effect of Sr Doping on Structure and Emittance of La1-xSrxMnO3 Smart Thermal Control Films

2014 ◽  
Vol 602-603 ◽  
pp. 902-905
Author(s):  
Yong Jun Shen ◽  
Chuan Bin Wang ◽  
Ling Li ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Film ◽  
Smooth Surface ◽  
Pulsed Laser ◽  
Double Exchange ◽  
Thermal Control ◽  
Laser Deposition ◽  
Lanthanum Manganite ◽  
Infrared Emissivity ◽  
Control Material ◽  
Double Exchange Interaction

Sr-doped lanthanum manganite (La1-xSrxMnO3) is characteristic of thermochromic, which can act as a smart thermal control material used in the variable-emittance devices. In the present study, La1-xSrxMnO3 thin films were prepared on MgO(100) substrates by pulsed laser deposition, and the effect of Sr-doping (x = 0 ~ 0.4) on the structure and infrared emissivity was investigated. Single-phased La1-xSrxMnO3 films with (100)-orientation were obtained, which showed a dense texture with smooth surface. The ratio of Mn4+/Mn3+ in the films was increased with increasing Sr doping, leading to the enhancement in double-exchange interaction and electrical conductivity. As a result, the phase transition from metal to insulator was observed with the increasing of test temperature. For the La0.8Sr0.2MnO3 thin film, a large value of emittance (De = 0.28) was obtained, indicating good variable-emittance by appropriate Sr doping.

Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films

2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Smooth Surface ◽  
Deposition Time ◽  
Si Substrate ◽  
X Ray ◽  
Coating Time ◽  
Deposited Films ◽  
Nio Films ◽  
Scanning Electron

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

A New Specimen for Measuring the Interfacial Toughness of Al-0.5%Cu Thin Film on Si Substrate

2005 ◽  
Vol 297-300 ◽  
pp. 521-526
Author(s):  
Insu Jeon ◽  
Masaki Omiya ◽  
Hirotsugu Inoue ◽  
Kikuo Kishimoto ◽  
Tadashi Asahina
Keyword(s):  
Thin Film ◽  
The Finite Element Method ◽  
Si Substrate ◽  
Detailed Structure ◽  
Micro Fabrication ◽  
Interfacial Toughness ◽  
Linear Elastic ◽  
Elastic Fracture ◽  
Cu Thin Film ◽  
Research Show

A new specimen is proposed to measure the interfacial toughness between the Al-0.5%Cu thin film and the Si substrate. The plain and general micro-fabrication processes are sufficient to fabricate the specimen. With the help of the finite element method and the concepts of the linear elastic fracture mechanics, the detailed structure for this specimen is modeled and evaluated. The results obtained from this research show that the proposed specimen provides efficient and convenient method to measure the interfacial toughness between the Al-Cu thin film and the Si substrate.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

Bonding of LINBO3 thin film on Si substrate using laser irradiation

2015 ◽  
Author(s):  
Hiroki Kawano ◽  
Ryo Takigawa ◽  
Hiroshi Ikenoue ◽  
Tanemasa Asano
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Si Substrate

Effects of interface between SnO2 thin film and Si substrate on growth time

2012 ◽  
Vol 12 (1) ◽  
pp. 303-306 ◽  
Author(s):  
Jin Jeong ◽  
Do-Sun Na ◽  
Bong-Ju Lee ◽  
Ho-Jun Song ◽  
Hyun-Goo Kim
Keyword(s):  
Thin Film ◽  
Sno2 Thin Film ◽  
Growth Time ◽  
Si Substrate

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Nickel Nitrate ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Lanthanum Nickel ◽  
Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

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