scholarly journals Up gradation of LHCD system for rf power level up to 2MW for SST1

2010 ◽  
Vol 208 ◽  
pp. 012027 ◽  
Author(s):  
P K Sharma ◽  
K K Ambulkar ◽  
P R Parmar ◽  
C G Virani ◽  
A L Thakur ◽  
...  
Keyword(s):  
Power Level ◽  
Rf Power

Growth of Polycrystalline Silicon films at low Temperature by Remote Plasma CVD

1992 ◽  
Vol 283 ◽  
Author(s):  
Sung Chul Kim ◽  
Kyu Chang Park ◽  
Sung Ki Kim ◽  
Jung Mok Jun ◽  
Jin Jang
Keyword(s):  
Substrate Temperature ◽  
Polycrystalline Silicon ◽  
Volume Fraction ◽  
Power Level ◽  
Chemical Vapour ◽  
Rf Power ◽  
Crystalline Volume Fraction ◽  
Remote Plasma ◽  
Chemical Vapour Deposition Technique ◽  
Polycrystalline Silicon Films

ABSTRACTWe studied the growth of polycrystalline silicon by using remote plasma chemical vapour deposition technique. The effects of RF power and the substrate temperature on the structural properties have been investigated. With increasing the RF power, the crystalline volume fraction and the grain size increase up to 100W, but decrease for the further increase in power level. We obtained the poly-Si with the crystalline volume fraction of about 74 at.% at the substrate temperature of 330°C.

Macro-effects of resputtering due to negative ion bombardment of growing thin films

1993 ◽  
Vol 8 (8) ◽  
pp. 1928-1937 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thickness Distribution ◽  
Power Level ◽  
Negative Ions ◽  
Negative Ion ◽  
Complete Suppression ◽  
Film Material ◽  
Rf Power ◽  
Partial Pressures

Bombardment of a growing thin film by negative ions can lead to changes in the film through the process of resputtering. Macro-effects of resputtering (effects on the film thickness) include a slowing of the film growth rate and, in some cases, a complete suppression of the film growth as well as an etching of the substrate materials. To study this result of resputtering, rf-diode sputtering was used to deposit BaTiO3 films under a variety of conditions, varying deposition time, rf-power level, substrate-to-target distance, total gas pressure, and argon, oxygen, and hydrogen partial pressures. The effect resputtering had on the thickness was seen to be a result of the competition between deposition and etching of the thin film material. The relative influence of the various sputtering parameters and the effect each of these has on the thickness distribution were examined. It was found that the greatest influence was system geometry, followed by rf-power level. Various methods of controlling resputtering are discussed.

Multi-antenna RF Ion Source at a High RF Power Level

2009 ◽  
Author(s):  
Y. Oka ◽  
T. Shoji ◽  
O. Kaneko ◽  
Y. Takeiri ◽  
K. Tsumori ◽  
...  
Keyword(s):  
Power Level ◽  
Ion Source ◽  
Rf Power ◽  
Rf Ion Source

scholarly journals Design and Analysis of Active Metamaterial Modulated by RF Power Level

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Ratanak Phon ◽  
Sungjoon Lim
Keyword(s):  
Power Level ◽  
Rf Power

Growth of Germanium Carbon Alloy by Pecvd Using Silane as a Growth Promoter

1994 ◽  
Vol 336 ◽  
Author(s):  
Paul R. Moffitt ◽  
H. A. Naseem ◽  
S. S. Ang ◽  
W. D. Brown
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Carbon Source ◽  
Flow Rate ◽  
Power Level ◽  
Optoelectronic Properties ◽  
Gas Mixture ◽  
Growth Promoter ◽  
Rf Power ◽  
Multijunction Solar Cells

ABSTRACTA possible alternative to a-SiGe for use in multijunction solar cells is a-GeC alloy. Only preliminary work has been done so far on this alloy, Mostly for use as an IR anti-reflection coating, with little study done on its optoelectronic properties. GeC films were grown by the PECVD Method from a novel gas mixture using GeF4 as the germanium source gas. Methane was used as the carbon source, with H2 being added for additional hydrogenation of the film. It was found that adding silane to the mixture would increase the growth rate from less than 1 Å/s up to 30 Å/s. The films contained no detectable silicon, even at mixture ratios of five SiH4 to one GeF4. Varying the amount of methane in the gas mixture allowed the film optical bandgap to be adjusted from 1.1 eV to 1.8 eV. The effect of other parameters such as RF power level and H2 flow rate on bandgap and growth rate were also explored. Optoelectronic properties in the 1.2 to 1.4 eV bandgap range will also be reported.

Deposition of Aluminum Nitride Films Using RF Reactive Sputtering

1986 ◽  
Vol 68 ◽  
Author(s):  
N. Kumar ◽  
K. Pourrezaei ◽  
R. J. De Maria ◽  
B. Singh
Keyword(s):  
Aluminum Nitride ◽  
Power Level ◽  
Reactive Sputtering ◽  
Rf Power ◽  
Nitride Formation ◽  
Higher Power ◽  
Nitrogen Mixture ◽  
Dc Bias ◽  
High Degree ◽  
Nitrogen Percentage

AbstractRF reactive sputtering of aluminum in argon-nitrogen mixture has been used to deposit basal oriented aluminum nitride films at temperatures lower than 200°C.X-ray diffraction studies of films deposited in 40–60% nitrogen show very high degree of crystallinity.A characteristic step-like decrease in target induced dc bias and the deposition rate (at a constant rf power level) is observed when the nitrogen content is increased above about 20%.The plot of target bias vs.nitrogen content shows a typical hysteresis loop which decreases in size at higher power levels, thus indicating nitride formation at the target surface.Glow discharge mass spectrometry was used to monitor the ions arriving at the substrate.There is a dramatic decrease in Al+ ion current when the nitrogen percentage in the gas mixture is increased above 20%.

Growth and Characterization of InGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam Epitaxy

1999 ◽  
Vol 572 ◽  
Author(s):  
K. H. Shim ◽  
S. E. Hong ◽  
K. H. Kim ◽  
M. C. Paek ◽  
K. I Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Power Level ◽  
Rf Plasma ◽  
Rf Power ◽  
Island Growth ◽  
Structural And Optical Properties ◽  
Set Up ◽  
And Diffusion

Structural and optical properties of In0.2Ga0.8N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated as a function of rf plasma power. Indium incorporation resulted in the higher rf power level suppressing 3D island growth with reduced introduction of defects in In0.2Ga0 8N in comparison with GaN. Sharp morphology at interfaces and strong transitions in photoluminescence reveal the optimum rf power around 400 W in our experimental set up for the growth of In0.2Ga0.8N/GaN heterostructures. Our experimental observations suggest that the presence of indium on surface modulates the rate of plasma stimulated desorption and diffusion, and reduces the formation of damaged subsurface.

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