Deposition of Aluminum Nitride Films Using RF Reactive Sputtering

1986 ◽  
Vol 68 ◽  
Author(s):  
N. Kumar ◽  
K. Pourrezaei ◽  
R. J. De Maria ◽  
B. Singh
Keyword(s):  
Aluminum Nitride ◽  
Power Level ◽  
Reactive Sputtering ◽  
Rf Power ◽  
Nitride Formation ◽  
Higher Power ◽  
Nitrogen Mixture ◽  
Dc Bias ◽  
High Degree ◽  
Nitrogen Percentage

AbstractRF reactive sputtering of aluminum in argon-nitrogen mixture has been used to deposit basal oriented aluminum nitride films at temperatures lower than 200°C.X-ray diffraction studies of films deposited in 40–60% nitrogen show very high degree of crystallinity.A characteristic step-like decrease in target induced dc bias and the deposition rate (at a constant rf power level) is observed when the nitrogen content is increased above about 20%.The plot of target bias vs.nitrogen content shows a typical hysteresis loop which decreases in size at higher power levels, thus indicating nitride formation at the target surface.Glow discharge mass spectrometry was used to monitor the ions arriving at the substrate.There is a dramatic decrease in Al+ ion current when the nitrogen percentage in the gas mixture is increased above 20%.

Cathodoluminescence of Praseodymium doped AlN, GaN and turbo static BN.

2004 ◽  
Vol 831 ◽  
Author(s):  
Muhammad Maqbool ◽  
H. H. Richardson ◽  
M. E. Kordesch
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Boron Nitride ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Reactive Sputtering ◽  
Visible Range ◽  
Rf Power

ABSTRACTPraseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100–200 Watts RF power, 5–10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from 3P0 → 3H4, 3P1→ 3H5, and 3P0 → 3F2 transitions in AlN:Pr, 3P0 → 3H4, 3P0 → 3H6, and 3P0 → 3F2 transitions in GaN:Pr and from 3P0 → 3H4, 3P1→ 3H5, 3P0 → 3H6, and 3P0 → 3F2 transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from 1S0 → 1D2 and 1S0 → 1I6 which are not observed in GaN:Pr and BN:Pr films.

scholarly journals Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

PLoS ONE ◽  
2015 ◽  
Vol 10 (7) ◽  
pp. e0133479 ◽  
Author(s):  
Khaled Sayed Elbadawi Ramadan ◽  
Stephane Evoy
Keyword(s):  
Low Temperature ◽  
Aluminum Nitride ◽  
Reactive Sputtering ◽  
Thin Aluminum

Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition

2018 ◽  
Vol 52 (2) ◽  
pp. 184-188 ◽  
Author(s):  
Ya. V. Lubyanskiy ◽  
A. D. Bondarev ◽  
I. P. Soshnikov ◽  
N. A. Bert ◽  
V. V. Zolotarev ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Plasma Deposition ◽  
Mixture Effect ◽  
Ion Plasma ◽  
Nitrogen Mixture

scholarly journals Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2562
Author(s):  
Pierre-Marie Coulon ◽  
Peng Feng ◽  
Tao Wang ◽  
Philip A. Shields
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Defect Density ◽  
Rf Power ◽  
Resonant Cavities ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Dc Bias ◽  
The Impact

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 1261-1264 ◽  
Author(s):  
Jae Hyun Shim ◽  
Nam Hee Cho
Keyword(s):  
Vapor Deposition ◽  
Amorphous Matrix ◽  
Chemical Vapor ◽  
Rf Power ◽  
Structural And Optical Properties ◽  
Dc Bias ◽  
Pl Emission ◽  
Si Films ◽  
Si Nanocrystallites ◽  
Nanocrystalline Si

Amorphous and nanocrystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a RF power of 100 W, while substrates were under DC biases varying from 0 to -600 V. The size as well as the concentration of Si nanocrystallites increased with raising the DC bias; the PL emission wavelength was shifted from 400 to 750 nm. A model for the nanostructural variation in the nc-Si:H films was suggested to describe the change in the size and concentration of the nanocrystallites as well as the amorphous matrix depending on the DC bias conditions.

Growth of Polycrystalline Silicon films at low Temperature by Remote Plasma CVD

1992 ◽  
Vol 283 ◽  
Author(s):  
Sung Chul Kim ◽  
Kyu Chang Park ◽  
Sung Ki Kim ◽  
Jung Mok Jun ◽  
Jin Jang
Keyword(s):  
Substrate Temperature ◽  
Polycrystalline Silicon ◽  
Volume Fraction ◽  
Power Level ◽  
Chemical Vapour ◽  
Rf Power ◽  
Crystalline Volume Fraction ◽  
Remote Plasma ◽  
Chemical Vapour Deposition Technique ◽  
Polycrystalline Silicon Films

ABSTRACTWe studied the growth of polycrystalline silicon by using remote plasma chemical vapour deposition technique. The effects of RF power and the substrate temperature on the structural properties have been investigated. With increasing the RF power, the crystalline volume fraction and the grain size increase up to 100W, but decrease for the further increase in power level. We obtained the poly-Si with the crystalline volume fraction of about 74 at.% at the substrate temperature of 330°C.

Silicon Carbon Nitride Thin Films Produced by Magnetron Reactive Sputtering Physical Vapour Deposition: Structural, Chemical and Mechanical Characterisation

2017 ◽  
Vol 33 (1-2) ◽  
pp. 44
Author(s):  
P. Kouakou ◽  
P. Yoboue ◽  
B. Ouattara ◽  
V. Hody ◽  
P. Choquet ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Vapour Deposition ◽  
Reactive Sputtering ◽  
Mechanical Characterisation ◽  
Silicon Carbon ◽  
Film Adhesion ◽  
Experimental Parameters ◽  
Nitrogen Percentage ◽  
Silicon Carbon Nitride

Amorphous silicon carbon nitride films were deposited on silicon and WC-Co substrates by magnetron reactive sputtering in Ar/N<sub>2</sub> gas mixture with carbon and silicon targets. The influence of experimental parameters on the films morphological, structural and mechanical properties was studied. The general morphology of the film is observed by SEM and TEM. EDXS and FTIR were used to determine the film chemical composition and the nature of chemical bonding. It was observed that C≡N bonds and nitrogen percentage in the film are promoted when the substrate is biased. The role of an underlayer and the influence of its nature on the film adhesion on WC/Co substrates were also studied. In this case, nanoscratch tests showed that a SiNx thin film could be an appropriate underlayer.

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