scholarly journals Study of nonlinear optical phenomena in silicon nanowires

2021 ◽  
Vol 2086 (1) ◽  
pp. 012023
Author(s):  
V A Mastalieva ◽  
V Neplokh ◽  
A I Morozov ◽  
A A Nikolaeva ◽  
A S Gudovskikh ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Optical Devices ◽  
Growth Substrate ◽  
Silicone Membrane ◽  
Plasma Chemical ◽  
Third Harmonic ◽  
Naked Eye ◽  
Harmonic Signals ◽  
Plasma Chemical Etching ◽  
Nonlinear Optical Phenomena

Abstract This work studies generation of second and third harmonics in arrays of vertically oriented silicon nanowires (SiNWs) encapsulated into a silicone membrane and separated from the growth substrate. The structures were produced by plasma-chemical etching of silicon substrate resulting in a formation of homogeneous arrays of SiNWs. Such SiNW-based membranes demonstrated efficient infrared-to-visible light conversion by generation of second and third harmonic signals visible by a naked eye. This study contributes to the development of technology of optical devices based on silicon and presents a new route for visualization of infrared radiation.

scholarly journals Study of nonlinear optical phenomena in silicone films encapsulated with SiO2 and Si/SiO2 spherical particles

2021 ◽  
Vol 2103 (1) ◽  
pp. 012119
Author(s):  
V Mastalieva ◽  
A Nikolaeva ◽  
V Neplokh ◽  
D Eurov ◽  
S Makarov ◽  
...  
Keyword(s):  
Harmonic Generation ◽  
Nonlinear Optical ◽  
Second Harmonic ◽  
Optoelectronic Devices ◽  
Optical Devices ◽  
Spherical Particles ◽  
Second Harmonic Generation Signal ◽  
Visible Range ◽  
Third Harmonic ◽  
Nonlinear Optical Phenomena

Abstract Infrared converters to visible range are in demand for creation of optoelectronic devices, infrared visualizers and other non-linear optical devices. In this work we study nonlinear optical properties of monodisperse SiO2 and Si/SiO2 spheres encapsulated into silicone films. The fabricated silicone films containing SiO2 spheres demonstrated a bright third harmonic generation signal, and films with Si/SiO2 spheres demonstrated a significant second harmonic generation signal in the whole visible range. The developed materials and methods provide a platform for future infrared to visible converters based on silicon.

КОМПЛЕКС БАЗОВЫХ ТЕХНОЛОГИЧЕСКИХ ПРОЦЕССОВ ДЛЯ ПОЛУЧЕНИЯ МОЩНЫХ ПОЛЕВЫХ ТРАНЗИСТОРОВ И МИС СВЧ-ДИАПАЗОНА НА ОСНОВЕ GAN И GAAS С ИСПОЛЬЗОВАНИЕМ ОТЕЧЕСТВЕННОГО ОБОРУДОВАНИЯ

2020 ◽  
Vol 96 (3s) ◽  
pp. 343-346
Author(s):  
А.Н. Алексеев ◽  
С.И. Петров
Keyword(s):  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Production Cycle ◽  
Electronic Industry ◽  
Plasma Chemical ◽  
High Power Field ◽  
Mbe Growth ◽  
Technological Processes ◽  
Plasma Chemical Etching ◽  
Problems And Solutions

Представлены результаты разработки базовых технологических процессов, используемых при получении мощных полевых транзисторов и МИС СВЧ-диапазона на основе GaN и GaAs, таких как: выращивание гетероструктур методом МЛЭ, металлизация и отжиг омических контактов, травление мезаизоляции, затворная металлизация, пассивация диэлектриком и др. Обсуждаются основные проблемы и пути их решения, в том числе особенности технологических процессов глубокого плазмохимического травления для формирования сквозных металлизированных отверстий в SiC и GaAs. Отдельное внимание уделено вопросам обеспечения однородности и воспроизводимости и их влиянию на выход годных структур. Продемонстрированы результаты использования ряда технологических процессов в производственном цикле АО «Светлана-Рост» и других предприятий радиоэлектронной промышленности. The paper presents the results of the development of basic technological processes used in the production of microwave high-power field-effect transistors based on GaN and GaAs such as: MBE growth, metallization and annealing of ohmic contacts, etching of mesa insulation, gate metallization, passivation by dielectric etc. The main problems and solutions including features of technological processes of deep plasma-chemical etching in SiC and GaAs have been discussed. Special attention is paid to the issues of uniformity and reproducibility and their impact on the yield of structures. The results of the use of technological processes in the production cycle of Svetlana-Rost JSC and other enterprises of the radio-electronic industry have been demonstrated.

scholarly journals Experimental studies of plasma-chemical etching of glass when manufacturing diffraction and hologram optical elements

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Sergey Odinokov ◽  
Gaik Sagatelyan ◽  
Anton Goncharov ◽  
Mikhail Kovalev ◽  
Artem Solomashenko ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Experimental Studies ◽  
Plasma Chemical ◽  
Optical Elements ◽  
Plasma Chemical Etching

FREQUENCY TRIMMING OF THE STW RESONATORS WITH WORKING FREQUENCY UP TO 1 GHZ

2021 ◽  
pp. 79-85
Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev
Keyword(s):  
Quality Factor ◽  
Chemical Etching ◽  
Single Port ◽  
Frequency Range ◽  
Plasma Chemical ◽  
Etching Method ◽  
Plasma Chemical Etching ◽  
Working Frequency ◽  
Frequency Trimming

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.

Synthesis of Silicon Nanowires Using Microwave Energy for Optical Devices

2009 ◽  
Vol 1 (1) ◽  
pp. M11-M15 ◽  
Author(s):  
Charu Lata Dube ◽  
Subhash C. Kashyap ◽  
D. C. Dube ◽  
D. K. Agarwal
Keyword(s):  
Silicon Nanowires ◽  
Optical Devices ◽  
Microwave Energy

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

2019 ◽  
Vol 822 ◽  
pp. 594-600
Author(s):  
E.V. Endiiarova ◽  
Singh Ruby
Keyword(s):  
Chemical Etching ◽  
Optimal Performance ◽  
Plasma Chemical ◽  
Plasma Chemical Etching

. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.

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