scholarly journals Surface biasing influence on the physical sputtering in fusion devices

2016 ◽  
Vol 748 ◽  
pp. 012002 ◽  
Author(s):  
I Borodkina ◽  
D Borodin ◽  
S Brezinsek ◽  
I V Tsvetkov ◽  
V A Kurnaev ◽  
...  
Keyword(s):  
Physical Sputtering

Physical and Chemical Sputtering at Very Low Ion Energy: the Importance of the Sputtering Threshold

1988 ◽  
Vol 129 ◽  
Author(s):  
Christoph Steinbruchel
Keyword(s):  
Threshold Energy ◽  
Surface Binding ◽  
Ion Energy ◽  
Chemical Sputtering ◽  
Surface Binding Energy ◽  
Physical Sputtering ◽  
Chemical Etch ◽  
Ion Energies ◽  
The Difference ◽  
Physical And Chemical

ABSTRACTA variety of data for physical etching (i.e. sputtering) and for ion-enhanced chemical etching of Si and SiO2 is analyzed in the very-low-ion-energy regime. Bombardment by inert ions alone, by reactive ions, and by inert ions in the presence of reactiveneutrals is considered. In all cases the etch yield follows a square root dependence on the ion energy all the way down to the threshold energy for etching. At the same time, the threshold energy has a non-negligible effect on the etch yield even at intermediate ion energies. The difference between physical and ion-enhanced chemical etch yields can be accounted for by a reduction in the average surface binding energy of the etch products and a corresponding reduction in the threshold energy for etching. These results suggest that, in general, the selectivity for ion-enhanced etch processes relative to physical sputtering can be increased significantly at low ion energy.

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

scholarly journals Surface roughness effect on Mo physical sputtering and re-deposition in the linear plasma device PSI-2 predicted by ERO2.0

2019 ◽  
Vol 19 ◽  
pp. 13-18 ◽  
Author(s):  
A. Eksaeva ◽  
D. Borodin ◽  
J. Romazanov ◽  
A. Kirschner ◽  
A. Kreter ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Roughness Effect ◽  
Physical Sputtering ◽  
Plasma Device ◽  
Linear Plasma

Glass Coating Removal by Atmospheric Oxygen Plasma

2012 ◽  
Vol 629 ◽  
pp. 19-24 ◽  
Author(s):  
Cheng Yu Wang ◽  
Fei Shi ◽  
Shi Hong Pang ◽  
Chun Sheng Ren ◽  
Ying Tao ◽  
...  
Keyword(s):  
Oxygen Plasma ◽  
Atmospheric Oxygen ◽  
Ultra Violet ◽  
Oxygen Plasma Treatment ◽  
Physical Sputtering ◽  
Before And After ◽  
Glass Panels ◽  
Solar Control ◽  
Coating Removal ◽  
Excited Oxygen

Coatings such as Cr, Ni, Ti, and SiO2/SnO2 on solar-control and low-emissivity (low-E) glasses are commonly used in the energy efficient glass windows. However, coloring in the re-manufactured glass panels using recycled window glasses resulting from the coatings reduces the glass transparency significantly. Traditional ways to remove coatings by manual wheels and pneumatic removal machines are labor intense and slow processes. In this study a new way to remove the coatings on recycled coated glasses was investigated. The Ultra Violet/Visible/Infrared (UV/VIS/IR) spectra and Secondary Electron Microscope (SEM) pictures were taken before and after 30s. atmospheric pressure oxygen plasma treatments. It was confirmed that the atmospheric oxygen plasma treatment is a fast, efficient, and low pollution way to remove the coatings before the remanufacture of recycled glasses. Other than the physical sputtering off the coatings from the plasma, there are many excited oxygen species in the plasma which effectively react to the coating and the products are then removed.

Insituformation of YBa2Cu3Oxthin films by physical sputtering

1989 ◽  
Vol 54 (12) ◽  
pp. 1163-1165 ◽  
Author(s):  
J.‐J. Yeh ◽  
M. Hong ◽  
R. J. Felder
Keyword(s):  
Physical Sputtering

Modeling and simulation of physical sputtering

2016 ◽  
Vol 627 (1) ◽  
pp. 183-189
Author(s):  
A. El Kebch ◽  
N. Dlimi ◽  
D. Saifaoui ◽  
A. Dezairi ◽  
M. El Mouden
Keyword(s):  
Modeling And Simulation ◽  
Physical Sputtering

Characterization of Sidewall Residue Film and Atomic Structure of the Trench Formed by BCI3/CI2 Reactive Ion Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
Sun Jin Yun ◽  
Young-Jin Jeon ◽  
Jeong Y. Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Bottom Surface ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Transmission Electron ◽  
Physical Sputtering ◽  
20 Nm

ABSTRACTThe silicon trench etching in BCl3/Cl2 reactive ion etching plasma leads to the intrinsic bonding damage, the permeations of etching species and impurities into silicon substrates, and the deposition of residue film on trench sidewall. The contaminations and the damages in trench were investigated by using high resolution transmission electron microscopy (HRTEM), secondary ion mass spectrometry (SIMS), and x-ray photoelectron spectroscopy (XPS). The microstructure of the rounded bottom surface showed that the surface region was distorted by 2 - 6 atomic layers and the trench etch was mainly limited by the physical sputtering-like mechanism. The damage in the silicon lattice consisted of prominent planar defects roughly confined to {110} and {111} planes. The thickness of sidewall residue film was 10 - 90 nm, which was thinner at deeper region of the trench, whereas that of residue film at the trench bottom was 1.5 - 3.5 nm. The SIMS results of no-patterned specimen presented that the permeation depths of boron and chlorine into the Si-substrate were about 40 and 20 nm, respectively. The presence of BxCly and Cl-related Si chemical states was identified from XPS analysis of the residue film.

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