Deposition of MoS2Films by Physical Sputtering and Their Lubrication Properties in Vacuum

1969 ◽  
Vol 12 (1) ◽  
pp. 36-43 ◽  
Author(s):  
T. Spalvins
Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2965
Author(s):  
Sandeep Agrawal ◽  
Nishant K. Singh ◽  
Rajeev Kumar Upadhyay ◽  
Gurminder Singh ◽  
Yashvir Singh ◽  
...  

In recent years, the engineering implications of carbon nanotubes (CNTs) have progressed enormously due to their versatile characteristics. In particular, the role of CNTs in improving the tribological performances of various engineering materials is well documented in the literature. In this work, an investigation has been conducted to study the tribological behaviour of CNTs filled with glass-reinforced polymer (GFRP) composites in dry sliding, oil-lubricated, and gaseous (argon) environments in comparison to unfilled GFRP composites. The tribological study has been conducted on hardened steel surfaces at different loading conditions. Further, the worn surfaces have been examined for a particular rate of wear. Field-emission scanning electron (FESEM) microscopy was used to observe wear behaviours. The results of this study explicitly demonstrate that adding CNTs to GFRP composites increases wear resistance while lowering friction coefficient in all sliding environments. This has also been due to the beneficial strengthening and self-lubrication properties caused by CNTs on GFRP composites, according to FESEM research.


2021 ◽  
Vol 10 (7) ◽  
pp. 2170029
Author(s):  
Diego Trucco ◽  
Lorenzo Vannozzi ◽  
Eti Teblum ◽  
Madina Telkhozhayeva ◽  
Gilbert Daniel Nessim ◽  
...  

1992 ◽  
Vol 81 (12) ◽  
pp. 1194-1198 ◽  
Author(s):  
U.I. Leinonen ◽  
H.U. Jalonen ◽  
P.A. Vihervaara ◽  
E.S.U. Laine

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Tao He ◽  
Xiqun Lu ◽  
Jingzhi Zhu

The analytical mobility method for dynamically loaded journal bearings was presented, with the intent to include it in a general computational program, such as the dynamic analysis program, that has been developed for the dynamic analysis of general mechanical systems. An illustrative example and numerical results were presented, with the efficiency of the method being discussed in the process of their presentation.


2007 ◽  
Vol 28 (2) ◽  
pp. 203-208 ◽  
Author(s):  
Jaekeun Lee ◽  
Sangwon Cho ◽  
Yujin Hwang ◽  
Changgun Lee ◽  
Soo H. Kim

2011 ◽  
Vol 239-242 ◽  
pp. 1359-1363
Author(s):  
Chao Hui Zhang ◽  
Si Si Liu ◽  
Yue Tao Sun ◽  
Jun Ming Liu

Aqueous solutions have found broad usages as lubricants, in conjunction with other possible utilizations, such as in metal working and other industries. Due to the inferior lubricity, functional additives are needed to improve their tribological performances among which aqueous surfactants are exclusively included. The film forming property of aqueous solution with polyethoxylated ether added (PEOE) is measured, taking consideration of the influences of the temperature and the concentration. The addition of PEOEs into aqueous solutions will largely increase the film forming capacity. But the concentration has only a minor influence on the lubrication property of the aqueous solutions with PEOEs. The cloud point will strongly alter the film forming characteristics.


1988 ◽  
Vol 129 ◽  
Author(s):  
Christoph Steinbruchel

ABSTRACTA variety of data for physical etching (i.e. sputtering) and for ion-enhanced chemical etching of Si and SiO2 is analyzed in the very-low-ion-energy regime. Bombardment by inert ions alone, by reactive ions, and by inert ions in the presence of reactiveneutrals is considered. In all cases the etch yield follows a square root dependence on the ion energy all the way down to the threshold energy for etching. At the same time, the threshold energy has a non-negligible effect on the etch yield even at intermediate ion energies. The difference between physical and ion-enhanced chemical etch yields can be accounted for by a reduction in the average surface binding energy of the etch products and a corresponding reduction in the threshold energy for etching. These results suggest that, in general, the selectivity for ion-enhanced etch processes relative to physical sputtering can be increased significantly at low ion energy.


1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.


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