Crystallographic orientation contrast associated with Ga+ ion channelling for Fe and Cu in focused ion beam method

2004 ◽  
Vol 53 (5) ◽  
pp. 571-576 ◽  
Author(s):  
Y. Yahiro
Keyword(s):  
Crystallographic Orientation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Orientation Contrast ◽  
Beam Method

Compression of Single-Crystal Micropillars of the Γ Intermetallic Phase in the Fe-Zn System

2014 ◽  
Vol 922 ◽  
pp. 264-269 ◽  
Author(s):  
Masahiro Inomoto ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui
Keyword(s):  
Single Crystal ◽  
Deformation Behavior ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Intermetallic Phase ◽  
Gamma Phase ◽  
Compression Tests ◽  
Slip Direction ◽  
Beam Method

The deformation behavior of the Γ (gamma) phase in the Fe-Zn system has been investigated via room-temperature compression tests of single-crystal micropillar specimens fabricated by the focused ion beam method. Trace analysis of slip lines indicates that {110} slip occurs for the specimens investigated in the present study. Although the slip direction has not been uniquely determined, the slip direction might be <111> in consideration of the crystal structure of the Γ phase (bcc).

Fabrication of $\bf NdBa_{2}Cu_{3}O_{7-{\ninmbi \delta}}$ (110)-(001) Grain Boundary Josephson Junction by Focused Ion Beam Method

1997 ◽  
Vol 36 (Part 2, No. 6B) ◽  
pp. L764-L766 ◽  
Author(s):  
Yuuji Mizuno ◽  
Yoshihiro Ishimaru ◽  
Jianguo Wen ◽  
Youichi Enomoto
Keyword(s):  
Grain Boundary ◽  
Josephson Junction ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Method

FIB Techniques for Analysis of Metallurgical Specimens

2000 ◽  
Vol 6 (S2) ◽  
pp. 524-525 ◽  
Author(s):  
Michael W. Phaneuf ◽  
Jian Li
Keyword(s):  
Focused Ion Beam ◽  
Materials Science ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Zirconium Alloys ◽  
Chemical Information ◽  
Specimen Preparation ◽  
Orientation Contrast ◽  
Imaging Tool ◽  
Zinc Coatings

Focused ion beam (FIB) microscopes, the use of which is well established in the semiconductor industry, are rapidly gaining attention in the field of materials science, both as a tool for producing site specific, parallel sided TEM specimens and as a stand alone specimen preparation and imaging tool.Both FIB secondary ion images (FIB SII) and FIB secondary electron images (FIB SEI) contain novel crystallographic and chemical information. The ability to see “orientation contrast” in FIB SEI and to a lesser extent SII is well known for cubic materials and more recently stress-free FIB sectioning combined with FIB imaging have been shown to reveal evidence of plastic deformation in metallic specimens. Particularly in hexagonal metals, FIB orientation contrast is sometimes reduced or eliminated by the FIB sectioning process. We have successfully employed FIB gas assisted etching during FIB sectioning using XeF2 for zirconium alloys and Cl2 for zinc coatings on steels to retain orientation contrast during subsequent imaging.

Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method

2004 ◽  
Vol 21 (10) ◽  
pp. 2054-2056 ◽  
Author(s):  
Liu Bo ◽  
Song Zhi-Tang ◽  
Feng Song-Lin ◽  
Chen Bomy
Keyword(s):  
Single Cell ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Cell Element ◽  
Beam Method

Effects of P Content on Morphology of Nanocrystals Induced by FIB Irradiation in Ni-P Amorphous Alloy

2006 ◽  
Vol 960 ◽  
Author(s):  
Koji Sato ◽  
Chiemi Ishiyama ◽  
Masato Sone ◽  
Yakichi Higo
Keyword(s):  
Thin Films ◽  
Amorphous Alloy ◽  
Crystallographic Orientation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Orientation Relationships ◽  
Beam Direction ◽  
Precipitation Distribution ◽  
P Content

ABSTRACTWe studied the effects of phosphorus (P) on Ni nanocrystalline morphology formed by focused ion beam (FIB) irradiation for Ni-P amorphous alloy thin films. The P content in the amorphous alloy was varied from 8 to 12 wt.%. The nanocrystals induced by the FIB irradiation for Ni-11.8, 8.9, 7.9 wt.% amorphous alloy had an f.c.c. structure and showed unique crystallographic orientation relationships to the geometry of the focused ion beam, that is, {111}f.c.c. parallel to the irradiated plane and <110>f.c.c. parallel to the projected ion beam direction, respectively. The Ni nanocrystals precipitated like aggregates with decreasing of the P content. These results represent that the P content does not affect crystallographic orientation relationships, while influences the precipitation distribution of Ni nanocrystals generated by the FIB irradiation.

Compression of Single-Crystal Micropillars of the ζ Intermetallic Phase in the Fe-Zn System

2012 ◽  
Vol 1516 ◽  
pp. 157-162 ◽  
Author(s):  
Masahiro Inomoto ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Deformation Behaviour ◽  
Intermetallic Phase ◽  
Compression Tests ◽  
Slip Direction ◽  
Beam Method ◽  
Image Position

ABSTRACTThe deformation behaviour of the ζ (zeta) phase in the Fe-Zn system has been investigated via room-temperature compression tests of single-crystal micropillar specimens prepared by the focused ion beam method. Trace analysis of slip lines indicates that {110} slip occurs for the specimens investigated in the present study. Although the slip direction has not been uniquely determined, comparison of Schmid factors and yield stress values suggests that the slip direction might be <1$\overline 1 $2>, which is inconsistent with the easiest slip system {110}[001] predicted on the basis of the primitive Peierls-Nabarro model.

Current-Voltage Characteristic of C-RAM Nano-Cell-Element

2007 ◽  
Vol 121-123 ◽  
pp. 591-594
Author(s):  
Bo Liu ◽  
Zhi Tang Song ◽  
Song Lin Feng ◽  
Bomy Chen
Keyword(s):  
Focused Ion Beam ◽  
Bottom Electrode ◽  
Ion Beam ◽  
Random Access ◽  
Access Memory ◽  
Cell Element ◽  
Current Voltage ◽  
Beam Method ◽  
Current Voltage Characteristics ◽  
Contact Size

Nano-cell-elements of chalcogenide random access memory (C-RAM) based on Ge2Sb2Te5 films have been successively fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change film and bottom electrode film in the nano-cell-element is in diameter of 90nm. The current-voltage characteristics of the C-RAM cell element are studied using the home-made current-voltage tester in our laboratory. The minimum SET current of about 0.3mA is obtained.

Probe modification for scanning-probe microscopy by the focused ion beam method

2012 ◽  
Vol 41 (1) ◽  
pp. 41-50 ◽  
Author(s):  
B. G. Konoplev ◽  
O. A. Ageev ◽  
V. A. Smirnov ◽  
A. S. Kolomiitsev ◽  
N. I. Serbu
Keyword(s):  
Scanning Probe Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Beam Method
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