scholarly journals Detection of a multi-disease biomarker in Saliva with Graphene Field Effect Transistors

2020 ◽  
Author(s):  
Narendra Kumar ◽  
Mason Gray ◽  
Juan C. Ortiz-Marquez ◽  
Andrew Weber ◽  
Cameron R. Desmond ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Early Stage ◽  
Human Saliva ◽  
Rna Aptamers ◽  
Label Free ◽  
Detection Range ◽  
Highly Sensitive ◽  
Gel Shift Assay ◽  
Carbonic Anhydrase 1

AbstractHuman carbonic anhydrase 1 (CA1) has been suggested as a biomarker for identification of several diseases including cancers, pancreatitis, diabetes, and Sjogren’s syndrome. However, the lack of a rapid, cheap, accurate, and easy-to-use quantification technique has prevented widespread utilization of CA1 for practical clinical applications. To this end, we present a label-free electronic biosensor for detection of CA1 utilizing highly sensitive graphene field effect transistors (G-FETs) as a transducer and specific RNA aptamers as a probe. The binding of CA1 with aptamers resulted in a positive shift in Dirac voltage VD of the G-FETs, the magnitude of which depended on target concentration. These aptameric G-FET biosensors showed the binding affinity (KD) of ∼ 2.3 ng/ml (70 pM), which is four orders lower than that reported using a gel shift assay. This lower value of KD enabled us to achieve a detection range (10 pg/ml - 100 ng/ml) which is well in line with the clinically relevant range. These highly sensitive devices allowed us to further prove their clinical relevance by successfully detecting the presence of CA1 in human saliva samples. Utilization of this label-free biosensor could facilitate the early stage identification of various diseases associated with changes in concentration of CAs.

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

scholarly journals Aptamer–field-effect transistors overcome Debye length limitations for small-molecule sensing

Science ◽  
2018 ◽  
Vol 362 (6412) ◽  
pp. 319-324 ◽  
Author(s):  
Nako Nakatsuka ◽  
Kyung-Ae Yang ◽  
John M. Abendroth ◽  
Kevin M. Cheung ◽  
Xiaobin Xu ◽  
...  
Keyword(s):  
Conformational Changes ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Debye Length ◽  
Stem Loop ◽  
Highly Sensitive ◽  
Close Proximity ◽  
Sphingosine 1 Phosphate ◽  
Specific Receptors ◽  
Highly Sensitive Detection

Detection of analytes by means of field-effect transistors bearing ligand-specific receptors is fundamentally limited by the shielding created by the electrical double layer (the “Debye length” limitation). We detected small molecules under physiological high–ionic strength conditions by modifying printed ultrathin metal-oxide field-effect transistor arrays with deoxyribonucleotide aptamers selected to bind their targets adaptively. Target-induced conformational changes of negatively charged aptamer phosphodiester backbones in close proximity to semiconductor channels gated conductance in physiological buffers, resulting in highly sensitive detection. Sensing of charged and electroneutral targets (serotonin, dopamine, glucose, and sphingosine-1-phosphate) was enabled by specifically isolated aptameric stem-loop receptors.

scholarly journals Graphene field effect transistors for highly sensitive and selective detection of K+ ions

2017 ◽  
Vol 253 ◽  
pp. 759-765 ◽  
Author(s):  
Hongmei Li ◽  
Yihao Zhu ◽  
Md. Sayful Islam ◽  
Md Anisur Rahman ◽  
Kenneth B. Walsh ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Selective Detection ◽  
Highly Sensitive

scholarly journals Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sooraj Sanjay ◽  
Mainul Hossain ◽  
Ankit Rao ◽  
Navakanta Bhat
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Point Of Care ◽  
Low Cost ◽  
Ph Sensor ◽  
Detection Sensitivity ◽  
Label Free ◽  
Back Gate ◽  
Dielectric Thickness ◽  
Label Free Detection

AbstractIon-sensitive field-effect transistors (ISFETs) have gained a lot of attention in recent times as compact, low-cost biosensors with fast response time and label-free detection. Dual gate ISFETs have been shown to enhance detection sensitivity beyond the Nernst limit of 59 mV pH−1 when the back gate dielectric is much thicker than the top dielectric. However, the thicker back-dielectric limits its application for ultrascaled point-of-care devices. In this work, we introduce and demonstrate a pH sensor, with WSe2(top)/MoS2(bottom) heterostructure based double gated ISFET. The proposed device is capable of surpassing the Nernst detection limit and uses thin high-k hafnium oxide as the gate oxide. The 2D atomic layered structure, combined with nanometer-thick top and bottom oxides, offers excellent scalability and linear response with a maximum sensitivity of 362 mV pH−1. We have also used technology computer-aided (TCAD) simulations to elucidate the underlying physics, namely back gate electric field screening through channel and interface charges due to the heterointerface. The proposed mechanism is independent of the dielectric thickness that makes miniaturization of these devices easier. We also demonstrate super-Nernstian behavior with the flipped MoS2(top)/WSe2(bottom) heterostructure ISFET. The results open up a new pathway of 2D heterostructure engineering as an excellent option for enhancing ISFET sensitivity beyond the Nernst limit, for the next-generation of label-free biosensors for single-molecular detection and point-of-care diagnostics.

scholarly journals Label-Free Sub-picomolar Protein Detection with Field-Effect Transistors

2010 ◽  
Vol 82 (9) ◽  
pp. 3531-3536 ◽  
Author(s):  
Pedro Estrela ◽  
Debjani Paul ◽  
Qifeng Song ◽  
Lukas K. J. Stadler ◽  
Ling Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Protein Detection ◽  
Label Free

scholarly journals Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors

2020 ◽  
Vol 22 (10) ◽  
pp. 5949-5958 ◽  
Author(s):  
Manthila Rajapakse ◽  
George Anderson ◽  
Congyan Zhang ◽  
Rajib Musa ◽  
Jackson Walter ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Gas Adsorption ◽  
Field Effect Transistors ◽  
Interaction Mechanism ◽  
Metal Contact ◽  
Contact Interface ◽  
Sensing Mechanism ◽  
Highly Sensitive ◽  
Barrier Model

Phosphorene-based field effect transistors are fabricated and are shown to be highly sensitive gas and photodetectors. The sensing mechanism is explained using a Schottky barrier model at the phosphorene/metal contact interface.

CMOS-Compatible Silicon Nanowire Field-Effect Transistors for Ultrasensitive and Label-Free MicroRNAs Sensing

Small ◽  
2014 ◽  
Vol 10 (10) ◽  
pp. 2022-2028 ◽  
Author(s):  
Na Lu ◽  
Anran Gao ◽  
Pengfei Dai ◽  
Shiping Song ◽  
Chunhai Fan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Cmos Compatible
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