Highly sensitive pH sensors based on double-gate silicon nanowire field-effect transistors with dual-mode amplification

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

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Vertical surround-gated silicon nanowire impact ionization field-effect transistors

Applied Physics Letters ◽

10.1063/1.2720640 ◽

2007 ◽

Vol 90 (14) ◽

pp. 142110 ◽

Cited By ~ 77

Author(s):

M. T. Björk ◽

O. Hayden ◽

H. Schmid ◽

H. Riel ◽

W. Riess

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Silicon Nanowire

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Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

Essays in Biochemistry ◽

10.1042/ebc20150009 ◽

2016 ◽

Vol 60 (1) ◽

pp. 81-90 ◽

Cited By ~ 45

Author(s):

Vivek Pachauri ◽

Sven Ingebrandt

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Label Free ◽

Biomolecular Detection ◽

New Device ◽

Label Free Detection ◽

History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

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Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Nanoscale Research Letters ◽

10.1186/s11671-016-1396-7 ◽

2016 ◽

Vol 11 (1) ◽

Cited By ~ 49

Author(s):

Youssouf Guerfi ◽

Guilhem Larrieu

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire

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Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00144 ◽

2017 ◽

Vol 9 (13) ◽

pp. 12046-12053 ◽

Cited By ~ 6

Author(s):

Jorge L. Barreda ◽

Timothy D. Keiper ◽

Mei Zhang ◽

Peng Xiong

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire

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NAND And NOR Logic-In-Memory Comprising Silicon Nanowire Feedback Field-Effect Transistors

10.21203/rs.3.rs-1130495/v1 ◽

2021 ◽

Author(s):

Yejin Yang ◽

Juhee Jeon ◽

Jaemin Son ◽

Kyoungah Cho ◽

Sangsig Kim

Keyword(s):

Processing Speed ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Logic Gate ◽

High Energy ◽

Zero Bias ◽

Computing Systems ◽

Data Movement

Abstract The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowidre feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.

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