Mössbauer study of Fe site occupancy and its effect onTcinYBa2(Cu1−xFex)3O6+yas a function of thermal treatments

Internal friction and Mössbauer techniques have been used to investigate the structure of C–Cr associates and the arrangement of Fe atoms near them in the Cr martensitic steel MANET subjected to different thermal treatments. After slow rate cooling from the austenitic field, the Mössbauer spectra exhibit, besides the complex magnetic pattern of martensite, a low intensity singlet attributed to the presence of a Cr-rich bcc phase. In correspondence, the internal friction curves, show, among others, a Snoek-type peak due to anelastic processes involving C–Cr associates with 6 Cr atoms. To explain the experimental results, a simple structural model is suggested.

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Mössbauer study of bipyramidal site occupancy in BaFe12−xMnxO19

Solid State Communications ◽

10.1016/0038-1098(84)90338-7 ◽

1984 ◽

Vol 50 (9) ◽

pp. 821-824 ◽

Cited By ~ 17

Author(s):

X. Obradors ◽

J. Tejada ◽

A. Isalgué ◽

J.C. Joubert

Keyword(s):

Site Occupancy ◽

Mössbauer Study

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High-resolution structure determination by ALCHEMI

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074707 ◽

1983 ◽

Vol 41 ◽

pp. 178-181 ◽

Cited By ~ 1

Author(s):

Peter G. Self ◽

Peter R. Buseck

Keyword(s):

Site Occupancy ◽

Real Space ◽

Unit Cell ◽

Bragg Angle ◽

Electron Current ◽

High Resolution Structure ◽

Beam Incident ◽

Crystallographic Planes ◽

Electron Beam Incident ◽

Resolution Structure

ALCHEMI (Atom Location by CHanneling Enhanced Microanalysis) enables the site occupancy of atoms in single crystals to be determined. In this article the fundamentals of the method for both EDS and EELS will be discussed. Unlike HRTEM, ALCHEMI does not place stringent resolution requirements on the microscope and, because EDS clearly distinguishes between elements of similar atomic number, it can offer some advantages over HRTEM. It does however, place certain constraints on the crystal. These constraints are: a) the sites of interest must lie on alternate crystallographic planes, b) the projected charge density on the alternate planes must be significantly different, and c) there must be at least one atomic species that lies solely on one of the planes.An electron beam incident on a crystal undergoes elastic scattering; in reciprocal space this is seen as a diffraction pattern and in real space this is a modulation of the electron current across the unit cell. When diffraction is strong (i.e., when the crystal is oriented near to the Bragg angle of a low-order reflection) the electron current at one point in the unit cell will differ significantly from that at another point.

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Thermomechanical Treatment of a 4340 Ni-Cr-Mo Alloy Steel

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100098083 ◽

1981 ◽

Vol 39 ◽

pp. 314-315 ◽

Cited By ~ 1

Author(s):

M.T. Jahn ◽

J.C. Yang ◽

C.M. Wan

Keyword(s):

Mechanical Property ◽

Chemical Composition ◽

Alloy Steel ◽

Thermomechanical Treatment ◽

Room Temperature ◽

Good Combination ◽

Thermal Treatments ◽

Low Carbon ◽

4340 Steel ◽

Good Improvement

4340 Ni-Cr-Mo alloy steel is widely used due to its good combination of strength and toughness. The mechanical property of 4340 steel can be improved by various thermal treatments. The influence of thermomechanical treatment (TMT) has been studied in a low carbon Ni-Cr-Mo steel having chemical composition closed to 4340 steel. TMT of 4340 steel is rarely examined up to now. In this study we obtain good improvement on the mechanical property of 4340 steel by TMT. The mechanism is explained in terms of TEM microstructures4340 (0.39C-1.81Ni-0.93Cr-0.26Mo) steel was austenitized at 950°C for 30 minutes. The TMTed specimen (T) was obtained by forging the specimen continuously as the temperature of the specimen was decreasing from 950°C to 600°C followed by oil quenching to room temperature. The thickness reduction ratio by forging is 40%. The conventional specimen (C) was obtained by quenching the specimen directly into room temperature oil after austenitized at 950°C for 30 minutes. All quenched specimens (T and C) were then tempered at 450, 500, 550, 600 or 650°C for four hours respectively.

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Zone-axis ALCHEMI for the rapid assessment of site occupancies in garnets

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144905 ◽

1986 ◽

Vol 44 ◽

pp. 706-707

Author(s):

M.T. Otten ◽

P.R. Buseck

Keyword(s):

Single Crystals ◽

Rapid Assessment ◽

Site Occupancy ◽

Zone Axis ◽

Synthetic Compounds ◽

X Ray ◽

Large Group ◽

Crystallographic Planes

ALCHEMI (Atom Location by CHannelling-Enhanced Microanalysis) is a TEM technique for determining site occupancies in single crystals. The method uses the channelling of incident electrons along specific crystallographic planes. This channelling results in enhanced x-ray emission from the atoms on those planes, thereby providing the required site-occupancy information. ALCHEMI has been applied with success to spinel, olivine and feldspar. For the garnets, which form a large group of important minerals and synthetic compounds, the channelling effect is weaker, and significant results are more difficult to obtain. It was found, however, that the channelling effect is pronounced for low-index zone-axis orientations, yielding a method for assessing site occupancies that is rapid and easy to perform.

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Site occupancy in gamma alumina

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100165732 ◽

1996 ◽

Vol 54 ◽

pp. 654-655

Author(s):

C. A. Bateman ◽

A.Z. Ringwelski ◽

R.W. Broach

Keyword(s):

Spinel Structure ◽

Site Occupancy ◽

Unit Cell ◽

Neutron Diffraction Data ◽

Gamma Alumina ◽

Tetrahedral Sites ◽

Powder Neutron Diffraction ◽

Cation Sites ◽

Powder Neutron Diffraction Data ◽

Insufficient Number

Gamma (γ) alumina is referred to as a defect spinel because it has a tetragonally distorted spinel structure (AB2O4) and an insufficient number of cations to fill all cation sites. In the spinel structure, the oxygen lattice is cubic close packed with A- and B-site cations in tetrahedral and octahedral coordination, respectively. The 2l⅓ Al atoms per unit cell of γ alumina can distribute themselves across 16 octahedral and 8 tetrahedral sites.The literature differs on where the 2⅔ cation vacancies per unit cell are located. Wilson and McConnell proposed that the vacancies in γ alumina, as first formed by calcining boehmite, are predominantly on the tetrahedral lattice but, with further heat treatment, move to occupy random positions on both octahedral and tetrahedral lattices. One study using NMR showed that the vacancies lay exclusively on the tetrahedral lattice, independent of the calcination temperature. A more-recent study using Rietveld refinement of powder neutron diffraction data suggested that both octahedral and tetrahedral lattices were partially occupied.

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TEM characterization of WSix films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171973 ◽

1994 ◽

Vol 52 ◽

pp. 848-849

Author(s):

V. C. Kannan ◽

S. M. Merchant ◽

R. B. Irwin ◽

A. K. Nanda ◽

M. Sundahl ◽

...

Keyword(s):

Integrated Circuits ◽

Vapor Deposition ◽

High Purity ◽

Physical Vapor Deposition ◽

Thermal Treatments ◽

Rapid Thermal Anneal ◽

Tungsten Silicide ◽

Tem Characterization ◽

Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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