Comment on “Transient Evolution of Surface Roughness on Patterned GaAs(001) During Homoepitaxial Growth”

2004 ◽  
Vol 93 (15) ◽  
Author(s):  
A. Ballestad ◽  
T. Tiedje ◽  
J. H. Schmid
Keyword(s):  
Surface Roughness ◽  
Homoepitaxial Growth

THE INFLUENCE OF THE SURFACE ORIENTATION ON THE MORPHOLOGY DURING HOMOEPITAXIAL GROWTH OF NICKEL BY MOLECULAR DYNAMICS SIMULATION

2017 ◽  
Vol 24 (02) ◽  
pp. 1750019 ◽  
Author(s):  
A. HASSANI ◽  
A. MAKAN ◽  
K. SBIAAI ◽  
A. TABYAOUI ◽  
A. HASNAOUI
Keyword(s):  
Molecular Dynamics ◽  
Surface Roughness ◽  
Film Growth ◽  
Deposition Process ◽  
Dynamics Simulation ◽  
Appearance Time ◽  
Homoepitaxial Growth ◽  
Embedded Atom ◽  
Upper Level ◽  
The One

Homoepitaxial growth film for (001), (110) and (111) Ni substrates is investigated by means of molecular dynamics (MD) simulation. Embedded atom method (EAM) is considered to represent the interaction potential between nickel atoms. The simulation is performed at 300[Formula: see text]K using an incident energy of 0.06[Formula: see text]eV. In this study, the deposition process is performed periodically and the period, [Formula: see text], is relative to a perfect layer filling. The coverage rate of the actual expected level, [Formula: see text], can be considered a determinant for thin-film growth of nickel. The [Formula: see text] level is the most filled level during the deposition on (001) substrate, while it is the less filled one in the case of (111) substrate. Moreover, the upper level is the one which is responsible for the surface roughness and the appearance time of an upper layer may also be a factor influencing the surface roughness. The deposition on (111) substrate induces the most rigorous surface with a rapid appearance time of the upper layers. The [Formula: see text] layers are almost completely filled for all substrates. The [Formula: see text] and lower layers are completely filled for (001) and (110) substrates while for (111) substrate the completely filled layers are [Formula: see text] and lower ones.

Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy

2004 ◽  
Vol 96 (8) ◽  
pp. 4556-4562 ◽  
Author(s):  
Nicholas A. Smith ◽  
H. Henry Lamb ◽  
Arthur J. McGinnis ◽  
Robert F. Davis
Keyword(s):  
Surface Roughness ◽  
Supersonic Jet ◽  
Homoepitaxial Growth ◽  
Supersonic Jet Epitaxy

Molecular dynamics simulation of surface morphology during homoepitaxial growth of Copper

2019 ◽  
Vol 87 (3) ◽  
pp. 31301 ◽  
Author(s):  
Hicham El Azrak ◽  
Abdessamad Hassani ◽  
Abdelhadi Makan ◽  
Fouad Eddiai ◽  
Khalid Sbiaai ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Md Simulation ◽  
Dynamics Simulation ◽  
Embedded Atom Method ◽  
Homoepitaxial Growth ◽  
Embedded Atom ◽  
Rough Surface Morphology

In this paper, molecular dynamics (MD) simulation of surface morphology during homoepitaxial growth of Copper was investigated. For this purpose, simulations of Cu deposition on the Cu(111) substrate with an incidence energy of 0.06 eV at 300K were performed using the embedded-atom method (EAM). The grown thin film on Cu(111) reveled a rough surface morphology. During deposition, the important fraction of atoms intended for the upper layers undergone a rising rate of about 40% starting from the 2nd period and continued to increase until 65%, while the lower level reached a permanent rate of only 25% by the 4th period. Otherwise, except at the first layer level, the lower layers are incomplete. This void in the lower layers has favored the growth of the upper layers until a rate of 143% and has accelerated their time appearance. Th incidence energy has favored the filling of lower layers by reducing this surface roughness. However, the temperature effect needs more relaxation time to fill the lower layers.

Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates

2015 ◽  
Vol 821-823 ◽  
pp. 181-184 ◽  
Author(s):  
Ji Chao Hu ◽  
Yu Ming Zhang ◽  
Ren Xu Jia ◽  
Yue Hu Wang ◽  
Bin Xin
Keyword(s):  
Surface Roughness ◽  
Low Pressure ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Growth Pressure ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Surface Mobility ◽  
The Impact

Step-bunching and triangular defects are significant problems in achieving higher growth rate 4H-SiC epilayers in a horizontal hot wall CVD reactor using a standard non-chlorinated chemistry of silane-propane-hydrogen on 4°off-axis substrates. In this work, the impact of growth pressure on generation of step-bunching and triangular defects and the correlations between the surface roughness and the formation of defects were investigated. It has been found that the impact of growth pressure on concentration of the triangle defects and surface roughness is obviously different. An overall reduction of defects was observed with decreasing growth pressure while the surface roughness increased. The increased adatom surface mobility in low pressure range and minimization of surface free energy are the main reasons for the phenomenon above. High Resolution X-Ray Diffraction (HRXRD) indicated that the structural quality of 4H-SiC epilayers performed at low pressure was higher than that obtained at high pressure.

Temperature and Coverage Dependence of the Surface Roughness for the Growth of Cu on Cu(001): An X-ray Scattering Study

2001 ◽  
Vol 672 ◽  
Author(s):  
Cristian E. Botez ◽  
William C. Elliott ◽  
Paul F. Miceli ◽  
Peter W. Stephens
Keyword(s):  
Surface Roughness ◽  
Mean Square ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Coverage Dependence ◽  
X Ray Scattering ◽  
Roughness Exponent ◽  
Scattering Study ◽  
The Mean ◽  
Ray Scattering

ABSTRACTSynchrotron X-ray scattering was used to study the temperature and coverage dependence of the root-mean-square (rms) surface roughness, σ, during the homoepitaxial growth on Cu(001). At temperatures between 370 and 160K, the rms roughness was found to increase as a power law, σ =Θβ, with the coverage Θ. The roughness exponent, β, amounts to ∼1/2 for T≤200K, and it monotonically decreases with increasing T, reaching β∼1/3 at T=370K. The mean-square roughness measured at a constant coverage of 15ML, σ2 15 ML, also depends on the temperature of the substrate: between 370 and 200K, σ2 15 ML becomes progressively larger at lower temperatures, but at 110K a reentrant smoother growth is observed.

Surface Preparation of Single Crystals for ZnO Homoepitaxy

2006 ◽  
Vol 957 ◽  
Author(s):  
Christian Neumann ◽  
Stefan Lautenschläger ◽  
Swen Graubner ◽  
Niklas Volbers ◽  
Bruno K Meyer ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Properties ◽  
Thermal Treatment ◽  
Single Crystals ◽  
Crystal Surface ◽  
Surface Preparation ◽  
Single Crystal Surface ◽  
Homoepitaxial Growth ◽  
Residual Defect ◽  
Mechanical Cutting

ABSTRACTFor the homoepitaxial growth of ZnO it is inevitable to obtain a regular crystalline single crystal surface prior to growth. Commercially available, hydrothermally grown ZnO single crystals show amorphous surfaces due to mechanical cutting and polishing. Here we present the results of a thermal treatment on these ZnO single crystals. After annealing, a regular crystalline oxygen terminated surface can be obtained. Changes in surface roughness, residual defect concentration and electrical properties can be shown. The bulk crystallinity though was not affected.

Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams

1997 ◽  
Vol 482 ◽  
Author(s):  
E. Chen ◽  
S. Zhang ◽  
A. Michel ◽  
R. F. Davis ◽  
H. H. Lamb
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Kinetic Energy ◽  
Molecular Beams ◽  
Concomitant Increase ◽  
Limited Growth ◽  
Modest Increase ◽  
Homoepitaxial Growth ◽  
Supersonic Molecular Beams ◽  
Incorporation Efficiency

AbstractHomoepitaxial growth of GaN on MOCVD-grown GaN/AlN/6H-SiC substrates was investigated using NH3-seeded supersonic molecular beams and an effusive Ga source. Ga-limited growth is observed at 730 and 770°C for incident Ga fluxes ≤ 1.2×1015 cm−2 s−1 using a 0.25 eV NH3 beam. A Ga incorporation efficiency of 20–25% is observed under these conditions. Increasing NH3 kinetic energy in the 0.25 to 0.61 eV range results in a modest increase in the GaN growth rate which we ascribe to an enhancement in NH3 reactivity. A concomitant increase in surface roughness is observed with increasing GaN growth rate.

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

2013 ◽  
Vol 740-742 ◽  
pp. 173-176 ◽  
Author(s):  
Jawad ul Hassan ◽  
Ian D. Booker ◽  
Louise Lilja ◽  
Anders Hallén ◽  
Martin Fagerlind ◽  
...  
Keyword(s):  
Surface Roughness ◽  
High Power ◽  
Basal Plane ◽  
Stacking Faults ◽  
Homoepitaxial Growth ◽  
Implantation Damage ◽  
Bipolar Devices ◽  
Additional Step ◽  
Lifetime Enhancement

We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 µm and controlled n-type doping of 4 x 1014 cm-3.The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 s using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage.

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