Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging
2005 ◽
Vol 38
(1)
◽
pp. 91-96
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Keyword(s):
X Ray
◽
The method called `rocking-curve imaging' (RCI) has recently been developed to visualize lattice imperfections in large crystals such as semiconductor wafers with high spatial resolution. The method is based on a combination of X-ray rocking-curve analysis and digital X-ray diffraction topography. In this article, an extension of the method is proposed by which dislocation densities in large-scale samples (semiconductor wafer crystals) can be quantified and their variation across the sample surface determined in an instrumentally simple way. Results from a nearly dislocation-free S-doped InP crystal and a semi-insulating GaAs are presented; both display a clearly non-random distribution of dislocations.
1995 ◽
Vol 86
(5)
◽
pp. 371-377
1981 ◽
Vol 37
(a1)
◽
pp. C272-C272
1991 ◽
Vol 184
(1-3)
◽
pp. 119-126
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Keyword(s):