Heat generation in silicon nanometric semiconductor devices
2014 ◽
Vol 33
(4)
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pp. 1198-1207
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Keyword(s):
Purpose – The purpose of this paper is to deal with the self-heating of semiconductor nano-devices. Design/methodology/approach – Transport in silicon semiconductor devices can be described using the Drift-Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation. Findings – A new estimator of the heat generation rate to be used in MC simulations has been found. Originality/value – The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations.
Keyword(s):
2019 ◽
Vol 180
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pp. 724-732
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Keyword(s):
Keyword(s):