The Impact of the Implementation Style on Power Consumption and Security in Embedded Cryptosystems

Author(s):  
Z. Yang ◽  
R. Muresan
Keyword(s):  
2019 ◽  
Vol 2019 (1) ◽  
pp. 331-338 ◽  
Author(s):  
Jérémie Gerhardt ◽  
Michael E. Miller ◽  
Hyunjin Yoo ◽  
Tara Akhavan

In this paper we discuss a model to estimate the power consumption and lifetime (LT) of an OLED display based on its pixel value and the brightness setting of the screen (scbr). This model is used to illustrate the effect of OLED aging on display color characteristics. Model parameters are based on power consumption measurement of a given display for a number of pixel and scbr combinations. OLED LT is often given for the most stressful display operating situation, i.e. white image at maximum scbr, but having the ability to predict the LT for other configurations can be meaningful to estimate the impact and quality of new image processing algorithms. After explaining our model we present a use case to illustrate how we use it to evaluate the impact of an image processing algorithm for brightness adaptation.


Author(s):  
Marina Bonomolo ◽  
Mariano Giuseppe Ippolito ◽  
Giuliana Leone ◽  
Rossano Musca ◽  
Vincenzo Porgi ◽  
...  

2015 ◽  
Vol 24 (04) ◽  
pp. 1550053
Author(s):  
Lobna I'msaddak ◽  
Dalenda Ben Issa ◽  
Abdennaceur Kachouri ◽  
Mounir Samet ◽  
Hekmet Samet

This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).


2005 ◽  
Vol 127 (1) ◽  
pp. 182-186 ◽  
Author(s):  
Michael Flouros

Trends in aircraft engines have dictated high speed rolling element bearings up to 3 million DN or more with the consequence of having high amounts of heat rejection in the bearing chambers and high oil scavenge temperatures. A parametric study on the bearing power consumption has been performed with a 124 mm pitch circle diameter (PCD) ball bearing in a bearing chamber that has been adapted from the RB199 turbofan engine DN∼2×106. The operating parameters such as oil flow, oil temperature, sealing air flow, bearing chamber pressure, and shaft speed have been varied in order to assess the impact on the power consumption. This work is the first part of a survey aiming to reduce power losses in bearing chambers. In the first part, the parameters affecting the power losses are identified and evaluated.


Energies ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1763 ◽  
Author(s):  
Haiqing Liu ◽  
Zhiqiao Li ◽  
Yuancheng Li

In recent years, various types of power theft incidents have occurred frequently, and the training of the power-stealing detection model is susceptible to the influence of the imbalanced data set and the data noise, which leads to errors in power-stealing detection. Therefore, a power-stealing detection model is proposed, which is based on Improved Conditional Generation Adversarial Network (CWGAN), Stacked Convolution Noise Reduction Autoencoder (SCDAE) and Lightweight Gradient Boosting Decision Machine (LightGBM). The model performs Generation- Adversarial operations on the original unbalanced power consumption data to achieve the balance of electricity data, and avoids the interference of the imbalanced data set on classifier training. In addition, the convolution method is used to stack the noise reduction auto-encoder to achieve dimension reduction of power consumption data, extract data features and reduce the impact of random noise. Finally, LightGBM is used for power theft detection. The experiments show that CWGAN can effectively balance the distribution of power consumption data. Comparing the detection indicators of the power-stealing model with various advanced power-stealing models on the same data set, it is finally proved that the proposed model is superior to other models in the detection of power stealing.


Author(s):  
Kazuaki Yazawa ◽  
Tenko Yamashita ◽  
Hideaki Kuroda

Trend of VLSI chip power consumption sounds switch over from the Moore’s law to more moderate curve by the “multi core processing” paradigm. Many of the recent advanced VLSI chips adopt the multiple processing units since clock enhancement is no longer feasible to gain the expected performance based on realistic range of power consumption. Even though, heat flux may keep increasing by further fine semiconductor process and may keep localizing by further complex logics. In this study, thermal impact of hot spot size relative to chip size or the dimension of heat sink is investigated by analytic modeling as well as numerical analysis. The analytic transient thermal spreading model in a solid with transfer function has already proposed and was validated in our previous work. In this study, we have considered the impact of thermal interface between the heat source and conductive and spreading component to the sink. Thermal response in wide rage of scales is discussed from transistor level to a millimeter scale. Each level of such various sizes can be investigated individually and can be built up with some sort of cascade manner. Based on this model, thermal diffusion in silicon substrate, which has the thermal coupling with spreader and thermal interface, will be discussed for a further fine process generation of the chip. The result implies that passive thermal spreading can be achieving to the limit.


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